US5344523A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Overpressure-protected, polysilicon, capacitive differential pressure sensor and method of making the same
Assignee: Schneider Electric Systems USA Inc
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Filing: 1993-11-12
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Granted: 1994-09-06
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Expires: 2013-11-12
Abstract
Abstract A capacitive differential pressure sensing device with pressure overrange protection and a method of making the same are described. The device employs a doped polysilicon diaphragm overlying a cavity in a doped single crystal silicon wafer having a port extending into the cavity from the opposite side. The cavity floor serves as an overrange protector.
Inventors
- 👤 Clifford D. Fung
- 👤 Kevin H. L. Chau
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 19:52
CPC Classifications
G; G01; G01L; G01L9/00; G01L9/0041; G01L9/0072; G01L9/0073; Y; Y10; Y10S; Y10S438/00; Y10S438/928; Y10S438/977; Y10T; Y10T29/00; Y10T29/43
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
167 words
A method for manufacturing a capacitive differential pressure sensing device comprising the steps of, forming a cavity in the top surface of a single crystal silicon wafer to a prescribed depth with a floor of generally predetermined area at said prescribed depth, said floor lying parallel to said upper surface, filling said cavity with a sacrificial spacer material so that the upper surface of the filled cavity forms a smooth continuous surface with the upper surface of said wafer, depositing on said wafer top surface a layer of polysilicon extending over the filled cavity, selectively doping a portion of the polysilicon layer overlaying the filled cavity to form a conductive p+ region, anisotropically etching in the bottom surface of said wafer, parallel to said top surface, an opening creating an open passage to the floor of said filled cavity, the opening in the floor of said cavity being located away from the center of said floor, and removing said spacer material in said cavity through said passage.
Claim 2
Independent Claim
167 words
A method for manufacturing a capacitive differential pressure sensing device comprising the steps of, forming a cavity in the top surface of a single crystal silicon wafer to a prescribed depth with a floor of generally predetermined area at said prescribed depth, said floor lying parallel to said upper surface, filling said cavity with a sacrificial spacer material so that the upper surface of the filled cavity forms a smooth continuous surface with the upper surface of said wafer, depositing on said wafer top surface a layer of polysilicon extending over the filled cavity, selectively doping a portion of the polysilicon layer overlaying the filled cavity to form a conductive p+ region, anisotropically etching in the bottom surface of said wafer, parallel to said top surface, an opening creating an open passage to the floor of said filled cavity, the opening in the floor of said cavity being located away from the center of said floor, and removing said spacer material in said cavity through said passage.
Claim 3
Dependent Claim
14 words
A method in accordance with claim 1 wherein said spacer material is silicon dioxide.
Claim 4
Dependent Claim
28 words
A method in accordance with claim 1 wherein a thin layer of dielectric material is coated on said wafer top surface prior to depositing said layer of polysilicon.
Claim 5
Dependent Claim
21 words
A method in accordance with claim 1 wherein said selective doping of the polysilicon layer is done by ion beam implantation.
Claim 6
Dependent Claim
27 words
A method in accordance with claim 1 wherein said passage and said cavity are passivated with an oxide material after said sacrificial spacer material has been removed.
Claim 7
Dependent Claim
36 words
A method in accordance with claim 1 wherein a second area of said polysilicon layer, separate from said first area is doped to an electrically conductive state to provide for an electrical contact to said wafer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-09-05 | 1998-03-07 | 1998-09-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-09-05 | 2002-03-07 | 2002-09-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-09-05 | 2006-03-07 | 2006-09-06 | $7700.00 | Window Closed / Lapsed |