Patent US5343354A successfully refreshed from Google Patents.
US5343354A
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Stacked trench capacitor and a method for making the same
Assignee: Samsung Electronics Co Ltd
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Filing: 1993-06-11
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Granted: 1994-08-30
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Expires: 2013-06-11
Abstract
Abstract A stacked trench capacitor including a first trench formed in a semiconductor substrate, an insulating material, preferably BPSG, substantially filling the first trench to thereby define an isolation region of the substrate, a second trench formed in the first trench, the second trench being much narrower and shallower than the first trench, a storage electrode formed on the sidewalls and bottom surface of the second trench, a thin dielectric film formed on the storage electrode, and a plate electrode formed on the thin dielectric film. In a preferred embodiment, the isolation region serves to separate and electrically isolate adjacent memory cells of a semiconductor memory device, each of the memory cells including a MOSFET transistor and a stacked trench capacitor constructed as described above. An impurity region is formed in the substrate adjacent an outer sidewall of the second trench to a depth preferably substantially equal to that of the second trench, the conductivity type of the impurity region being opposite that of the substrate. An upper portion of the impurity region preferably serves as the source region of the MOSFET transistor of the memory cell.
Inventors
- 👤 Tae-woo Lee
- 👤 Seon-jun Kim
- 👤 Yang-ku Lee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 19:33
CPC Classifications
H; H10; H10B; H10B12/00; H10B12/01; H10B12/02; H10B12/03; H10B12/038; H10B12/0387; H10D; H10D1/00; H10D1/60; H10D1/62; H10D1/66; H10D1/665; H10B12/30; H10B12/37; H10B12/377
Claims Analysis
Total Claims: 22
Claim 1
Independent Claim
140 words
A stacked trench capacitor, comprising: a first trench having a first depth and a first width formed in a semiconductor substrate, said first trench having a bottom surface and sidewalls; an isolation insulating layer substantially filling said first trench and defining an isolation region of said substrate; a second trench having a second depth and a second width formed in said first trench, said second trench having inner and outer sidewalls and a bottom surface, said outer sidewall being in contact with said substrate, and said second depth being less than said first depth and said second width being less than said first width; a storage electrode formed on said inner and outer sidewalls and bottom surface of said second trench; a thin dielectric film formed on said storage electrode; and, a plate electrode formed on said thin dielectric film.
Claim 2
Dependent Claim
140 words
A stacked trench capacitor, comprising: a first trench having a first depth and a first width formed in a semiconductor substrate, said first trench having a bottom surface and sidewalls; an isolation insulating layer substantially filling said first trench and defining an isolation region of said substrate; a second trench having a second depth and a second width formed in said first trench, said second trench having inner and outer sidewalls and a bottom surface, said outer sidewall being in contact with said substrate, and said second depth being less than said first depth and said second width being less than said first width; a storage electrode formed on said inner and outer sidewalls and bottom surface of said second trench; a thin dielectric film formed on said storage electrode; and, a plate electrode formed on said thin dielectric film.
Claim 3
Dependent Claim
19 words
The capacitor as set forth in claim 1, wherein said isolation insulating layer is comprised of borophosphosilicate glass (BPSG).
Claim 4
Dependent Claim
27 words
The capacitor as set forth in claim 1, further comprising an oxide layer interposed between said isolation insulating layer and said bottom surface of said first trench.
Claim 5
Dependent Claim
46 words
The capacitor as set forth in claim 3, further comprising a channel stop layer formed beneath said bottom surface of said first trench, said channel stop layer being comprised of a high concentration of impurities of a conductivity type the same as that of said substrate.
Claim 6
Dependent Claim
40 words
The capacitor as set forth in claim 4, further comprising an impurity region formed in said substrate in contact with said storage electrode, said impurity region being comprised of impurities of an opposite conductivity type as that of said substrate.
Claim 7
Dependent Claim
33 words
The capacitor as set forth in claim 5, wherein an upper portion of said impurity region comprises a source region of a MOSFET transistor of a memory cell of a semiconductor memory device.
Claim 8
Dependent Claim
21 words
The capacitor as set forth in claim 6, wherein said impurity region has a depth substantially equal to said second depth.
Claim 9
Dependent Claim
17 words
The capacitor as set forth in claim 7, wherein said isolation insulating layer is comprised of BPSG.
Claim 10
Dependent Claim
26 words
The capacitor as set forth in claim 7, wherein said isolation region serves to separate and electrically isolate adjacent memory cells of said semiconductor memory device.
Claim 11
Dependent Claim
20 words
The capacitor as set forth in claim 9, wherein said second width is less than on-third of said first width.
Claim 12
Dependent Claim
126 words
The capacitor as set forth in claim 6, wherein said MOSFET transistor includes: said source region; a drain region formed in said semiconductor substrate and separated from said source region by a distance defining the length of the channel region of said MOSFET transistor, said drain region being of a conductivity type the same as that of said source region; a thin gate insulation film formed on an upper surface of said semiconductor substrate; a gate electrode formed on said thin gate insulation film and substantially spanning said channel region; an upper insulating layer formed on said gate electrode and said upper surface of said semiconductor substrate; and, wherein further, said capacitor and said MOSFET transistor together comprise said memory cell of said semiconductor memory device.
Claim 13
Dependent Claim
104 words
The capacitor as set forth in claim 11, wherein: said storage electrode includes opposed legs and a bottom surface interconnecting said opposed legs, a substantial portion of said opposed legs extending upwardly beyond said upper surface of said semiconductor substrate and outwardly in opposite directions; said substantial portion of said opposed legs of said storage electrode being disposed on adjacent portions of said upper insulating layer; and, said plate electrode includes an outer flank portion which extends beyond an outer peripheral edge of said storage electrode and is disposed on said upper insulating layer proximate to said adjacent portions of said upper insulating layer.
Claim 14
Independent Claim
152 words
A method for making a stacked trench capacitor, comprising the steps of: forming a first trench having a first depth and a first width in a semiconductor substrate, said first trench having a bottom surface and sidewalls; substantially filling said first trench with an isolation insulating layer, to thereby define an isolation region of said substrate; forming a second trench having a second depth and a second width in said first trench, said second trench being formed to have inner and outer sidewalls and a bottom surface, said outer sidewall being in contact with said substrate, and said second depth being less than said first depth and said second width being less than said first width; forming a storage electrode on said inner and outer sidewalls and bottom surface of said second trench; forming a thin dielectric film on said storage electrode; and, forming a plate electrode on said thin dielectric film.
Claim 15
Independent Claim
152 words
A method for making a stacked trench capacitor, comprising the steps of: forming a first trench having a first depth and a first width in a semiconductor substrate, said first trench having a bottom surface and sidewalls; substantially filling said first trench with an isolation insulating layer, to thereby define an isolation region of said substrate; forming a second trench having a second depth and a second width in said first trench, said second trench being formed to have inner and outer sidewalls and a bottom surface, said outer sidewall being in contact with said substrate, and said second depth being less than said first depth and said second width being less than said first width; forming a storage electrode on said inner and outer sidewalls and bottom surface of said second trench; forming a thin dielectric film on said storage electrode; and, forming a plate electrode on said thin dielectric film.
Claim 16
Dependent Claim
17 words
The method as set forth in claim 13, wherein said isolation insulating layer is comprised of BPSG.
Claim 17
Dependent Claim
59 words
The method as set forth in claim 14, further comprising, prior to performing said forming a storage electrode step, the step of ion-implanting and thermally diffusing impurities of a conductivity type opposite that of said substrate into said substrate adjacent said outer sidewall of said second trench, to thereby form an impurity region in contact with said storage electrode.
Claim 18
Dependent Claim
21 words
The method as set forth in claim 15, wherein said impurity region has a depth substantially equal to said second depth.
Claim 19
Dependent Claim
33 words
The method as set forth in claim 15, wherein an upper portion of said impurity region comprises a source region of a MOSFET transistor of a memory cell of a semiconductor memory device.
Claim 20
Dependent Claim
125 words
The method as set forth in claim 17, wherein said MOSFET transistor includes: said source region; a drain region formed in said semiconductor substrate and separated from said source region by a distance defining the length of the channel region of said MOSFET transistor, said drain region having a conductivity type the same as that of said source region; a thin gate insulation film formed on an upper surface of said semiconductor substrate; a gate electrode formed on said thin gate insulation film and substantially spanning said channel region; an upper insulating layer formed on said gate electrode and said upper surface of said semiconductor substrate; and, wherein further, said capacitor and said MOSFET transistor together comprise said memory cell of said semiconductor memory device.
Claim 21
Dependent Claim
26 words
The method as set forth in claim 18, wherein said isolation region serves to separate and electrically isolate adjacent memory cells of said semiconductor memory device.
Claim 22
Dependent Claim
104 words
The method as set forth in claim 19, wherein: said storage electrode includes opposed legs and a bottom surface interconnecting said opposed legs, a substantial portion of said opposed legs extending upwardly beyond said upper surface of said semiconductor substrate and outwardly in opposite directions; said substantial portion of said opposed legs of said storage electrode being disposed on adjacent portions of said upper insulating layer; and, said plate electrode includes an outer flank portion which extends beyond an outer peripheral edge of said storage electrode and is disposed on said upper insulating layer proximate to said adjacent portions of said upper insulating layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-08-29 | 1998-02-28 | 1998-08-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-08-29 | 2002-02-28 | 2002-08-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-08-29 | 2006-02-28 | 2006-08-30 | $7700.00 | Window Closed / Lapsed |