Patent US5343353A successfully refreshed from Google Patents.
US5343353A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor device and process of producing the same
Assignee: Hitachi Ltd
•
Filing: 1992-08-17
•
Granted: 1994-08-30
•
Expires: 2012-08-17
Abstract
Abstract A microminiature, large capacitor for a semiconductor memory is formed from a raw material compound of plural different kinds of metal atoms for deposition, irrespective of the material, temperature and surface condition of a substrate, thereby forming a thin dielectric film having uniform characteristics not affected by the interface even though the film is made as thin as approximately 0.1 μm. The microminiature large capacitance capacitor has a capacitance unaffected by an oxide existing at the interface between a ferroelectric and electrodes without using precious metals such as platinum having the least degree of freedom in deposition of thin films and microminiature processing. The ferroelectric thin film is deposited using an organic metal comprising a plurality of kinds of metal elements in conformity with the composition of a desired dielectric. As electrodes for use in forming a capacitor, a substance exhibiting conductivity after oxidation is preferably employed.
Inventors
- 👤 Hiroshi Miki
- 👤 Yuzuru Ohji
- 👤 Shinichi Tachi
- 👤 Keiichi Kanehori
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 02:14
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/60; H10P14/69; H10P14/692; H10P14/6938; H10P14/69398; C; C23; C23C; C23C16/00; C23C16/22; C23C16/30; C23C16/40; C23C16/409; H10D; H10D1/00; H10D1/60; H10D1/68; H10D1/682; H10D1/684; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/66; H10P14/668; Y; Y10; Y10T; Y10T29/00; Y10T29/43; Y10T29/435
Claims Analysis
Total Claims: 59
Claim 1
Independent Claim
101 words
A method of forming a dielectric film for use in an electronic device, comprising the steps of: providing a body in a reactor; supplying mainly an organic compound, having each molecule comprising at least a first kind of metal atom and a second kind of metal atom different from the first kind, onto the body within the reactor; and heating the organic compound and thereby decomposing the organic molecule for thereby forming a dielectric film having the first kind of metal atom and second kind of metal atom in substantially the same ratio as they existed in the organic compound molecule.
Claim 2
Independent Claim
101 words
A method of forming a dielectric film for use in an electronic device, comprising the steps of: providing a body in a reactor; supplying mainly an organic compound, having each molecule comprising at least a first kind of metal atom and a second kind of metal atom different from the first kind, onto the body within the reactor; and heating the organic compound and thereby decomposing the organic molecule for thereby forming a dielectric film having the first kind of metal atom and second kind of metal atom in substantially the same ratio as they existed in the organic compound molecule.
Claim 3
Dependent Claim
40 words
The method of claim 1, wherein said forming further comprises reacting the first kind of metal atom with the second kind of metal atom to form a metallic compound in the dielectric film that is different from the organic compound.
Claim 4
Dependent Claim
27 words
The method of claim 2, wherein said supplying supplies the first kind of metal atom and the second kind of metal atom as lead and titanium, respectively.
Claim 5
Dependent Claim
19 words
The method of claim 3, wherein said step of forming forms the dielectric film as a lead titanate film.
Claim 6
Dependent Claim
20 words
The method of claim 3, wherein said step of forming forms the dielectric film as a lead zirconate titanate film.
Claim 7
Independent Claim
185 words
A method of forming an electronic device, comprising the steps of: providing a body in a reactor; supplying an organic compound, having each molecule comprising at least a first kind of metal atom and a second kind of metal atom different from the first kind, onto the body within the reactor; heating the organic compound and thereby decomposing the organic compound molecule for thereby forming a dielectric film having the first kind of metal atom and a second kind of metal atom in substantially the same ratio as they existed in the organic compound molecule; wherein said step of supplying further supplies a carrier gas for the organic compound molecule; said forming further comprising reacting the first kind of metal atom with the second kind of metal atom to form a metallic compound in the dielectric film that is different from the organic compound; said step of providing including forming a first conductive film on the body; and after all of said steps, forming a second conductive film on the dielectric film to form a capacitor as at least a part of the electronic device.
Claim 8
Independent Claim
185 words
A method of forming an electronic device, comprising the steps of: providing a body in a reactor; supplying an organic compound, having each molecule comprising at least a first kind of metal atom and a second kind of metal atom different from the first kind, onto the body within the reactor; heating the organic compound and thereby decomposing the organic compound molecule for thereby forming a dielectric film having the first kind of metal atom and a second kind of metal atom in substantially the same ratio as they existed in the organic compound molecule; wherein said step of supplying further supplies a carrier gas for the organic compound molecule; said forming further comprising reacting the first kind of metal atom with the second kind of metal atom to form a metallic compound in the dielectric film that is different from the organic compound; said step of providing including forming a first conductive film on the body; and after all of said steps, forming a second conductive film on the dielectric film to form a capacitor as at least a part of the electronic device.
Claim 9
Dependent Claim
42 words
The method according to claim 6, wherein said step of forming a first conductive film forms the first conductive film as an oxide containing an element selected from the group consisting of vanadium, chromium, iron, ruthenium, indium, tin, rhenium, iridium and lead.
Claim 10
Dependent Claim
51 words
The method according to claim 6, wherein said steps of forming the first conductive film and the second conductive film, forms each of the first and second conductive films as an oxide containing an element selected from the group consisting of vanadium, chromium, iron, ruthenium, indium, tin, rhenium, iridium and lead.
Claim 11
Dependent Claim
25 words
The method of claim 6, wherein one of said steps of forming forms one of the first and second conductive films as an oxide superconductor.
Claim 12
Dependent Claim
46 words
The method of claim 6, wherein said step of providing a body includes forming a transistor on the body prior to said step of forming a first conductive film, and wherein said forming the first conductive film electrically connects the first conductive film to the transistor.
Claim 13
Dependent Claim
84 words
The method of claim 6, wherein said step of forming the first conductive film forms the first conductive film as an oxide with a crystalline lattice structure, and said step of forming a dielectric film forms the dielectric film by epitaxial growth with a crystalline lattice structure at least similar to the crystalline lattice structure of the oxide so that an interface formed between the dielectric film and the first conductive film is a conductive film electrically a part of the first conductive film.
Claim 14
Dependent Claim
53 words
The method of claim 2, wherein said step of supplying further includes supplying additional oxygen to accelerate removal of an organic group from the organic compound molecule as a part of said decomposing and simultaneously to supply any oxygen needed for stoichiometric composition of the dielectric film as a part of said reacting.
Claim 15
Dependent Claim
66 words
The method of claim 2, wherein said step of supplying includes supplying a third kind of metal in a molecule separate from the organic compound molecule and depositing the third kind of metal molecule onto the body together with the organic compound molecule so that said reacting and forming forms the dielectric film as a reactive compound of the first, second and third kinds of metal.
Claim 16
Independent Claim
116 words
A method of forming a dielectric film for use in an electronic device, comprising the steps of: providing a body in a reactor; supplying an organic compound, having each molecule comprising at least a first kind of metal atom and a second kind of metal atom different from the first kind, onto the body within the reactor; heating the organic compound and thereby decomposing the organic compound molecule for thereby forming a dielectric film having the first kind of metal atom and second kind of metal atom in substantially the same ratio as they existed in the organic compound molecule; and wherein said step of supplying further supplies a carrier gas for the organic compound molecule.
Claim 17
Independent Claim
116 words
A method of forming a dielectric film for use in an electronic device, comprising the steps of: providing a body in a reactor; supplying an organic compound, having each molecule comprising at least a first kind of metal atom and a second kind of metal atom different from the first kind, onto the body within the reactor; heating the organic compound and thereby decomposing the organic compound molecule for thereby forming a dielectric film having the first kind of metal atom and second kind of metal atom in substantially the same ratio as they existed in the organic compound molecule; and wherein said step of supplying further supplies a carrier gas for the organic compound molecule.
Claim 18
Independent Claim
135 words
A method of forming a dielectric film for use in an electronic device, comprising the steps of: providing a body in a reactor; supplying an organic compound, having each molecule comprising at least a first kind of metal atom and a second kind of metal atom different from the first kind, onto the body within the reactor; heating the organic compound and thereby decomposing the organic compound molecule for thereby forming a dielectric film having the first kind of metal atom and second kind of metal atom in substantially the same ratio as they existed in the organic compound molecule; and wherein said step of providing a body provides the body in a chemical vapor deposition reactor and said steps of supplying, heating, decomposing and forming are conducted as a part of chemical vapor deposition.
Claim 19
Independent Claim
135 words
A method of forming a dielectric film for use in an electronic device, comprising the steps of: providing a body in a reactor; supplying an organic compound, having each molecule comprising at least a first kind of metal atom and a second kind of metal atom different from the first kind, onto the body within the reactor; heating the organic compound and thereby decomposing the organic compound molecule for thereby forming a dielectric film having the first kind of metal atom and second kind of metal atom in substantially the same ratio as they existed in the organic compound molecule; and wherein said step of providing a body provides the body in a chemical vapor deposition reactor and said steps of supplying, heating, decomposing and forming are conducted as a part of chemical vapor deposition.
Claim 20
Dependent Claim
82 words
The method according to claim 2, wherein said step of supplying, heating, reacting, forming, and decomposing form the dielectric film as a ferroelectric film containing more than 90% of Perovskite type oxide comprising at least one kind of atom in each molecule selected from the group consisting of Pb, Ca, Ba, Sr and one or more kinds of atoms selected from the group consisting of Zr, Ti, Sn, Hf, and as a ferroelectric film with a thickness of less than 0.1 μm.
Claim 21
Dependent Claim
32 words
The method according to claim 2, wherein said steps of supplying, heating, reacting, forming, and decomposing forms the dielectric film as a ferroelectric film with a thickness of less than 0.1 μm.
Claim 22
Dependent Claim
45 words
The method of claim 2, wherein said step of providing a body provides the body in a metal oxide chemical vapor deposition MOCVD reactor and said steps of supplying, heating, reacting, decomposing and forming are conducted as a part of metal oxide chemical vapor deposition.
Claim 23
Dependent Claim
23 words
The method of claim 6, wherein all of said steps forms the capacitor with a capacitance at least as great as 20 μF/cm2.
Claim 24
Dependent Claim
23 words
The method of claim 2, wherein all of said steps forms the dielectric film as a ferroelectric oxide, namely lead titanate-lead zirconate (PZT).
Claim 25
Dependent Claim
24 words
The method of claim 2, wherein all of said steps forms the dielectric film as a ferroelectric oxide, namely lead titanate zirconate lanthanum (PLZT).
Claim 26
Dependent Claim
21 words
The method of claim 2, wherein all of said steps forms the dielectric film as a ferroelectric oxide, namely lead titanate.
Claim 27
Dependent Claim
21 words
The method of claim 2, wherein all of said steps forms the dielectric film as a ferroelectric oxide, namely lead zirconate.
Claim 28
Dependent Claim
21 words
The method of claim 2, wherein all of said steps forms the dielectric film as a ferroelectric oxide, namely barium titanate.
Claim 29
Independent Claim
198 words
A method of forming an electronic device, comprising the steps of: providing a body in a reactor; supplying an organic compound, having each molecule comprising at least a first kind of metal atom and a second kind of metal atom different from the first kind, onto the body within the reactor; heating the organic compound and thereby decomposing the organic compound molecule for thereby forming a dielectric film having the first kind of metal atom and second kind of metal atom in substantially the same ratio as they existed in the organic compound molecule; wherein said forming further reacting the first kind of metal atom with the second kind of metal atom to form a metallic compound in the dielectric film that is different from the organic compound; wherein said step of providing includes forming a first conductive film on the body; after all of said steps, forming a second conductive film on the dielectric film to form a capacitor as at least a part of the electronic device; and wherein all of said steps forms the dielectric film as a ferroelectric oxide and the first and second conductive films as an oxide of titanium, copper or palladium.
Claim 30
Independent Claim
198 words
A method of forming an electronic device, comprising the steps of: providing a body in a reactor; supplying an organic compound, having each molecule comprising at least a first kind of metal atom and a second kind of metal atom different from the first kind, onto the body within the reactor; heating the organic compound and thereby decomposing the organic compound molecule for thereby forming a dielectric film having the first kind of metal atom and second kind of metal atom in substantially the same ratio as they existed in the organic compound molecule; wherein said forming further reacting the first kind of metal atom with the second kind of metal atom to form a metallic compound in the dielectric film that is different from the organic compound; wherein said step of providing includes forming a first conductive film on the body; after all of said steps, forming a second conductive film on the dielectric film to form a capacitor as at least a part of the electronic device; and wherein all of said steps forms the dielectric film as a ferroelectric oxide and the first and second conductive films as an oxide of titanium, copper or palladium.
Claim 31
Dependent Claim
18 words
The method of claim 2, wherein all of said steps forms the dielectric film as a ferroelectric oxide.
Claim 32
Dependent Claim
18 words
The method of claim 6, wherein all of said steps forms the dielectric film as a ferroelectric oxide.
Claim 33
Independent Claim
202 words
A method of forming an electronic device, comprising the steps of: providing a body in a reactor; supplying an organic compound, having each molecule comprising at least a first kind of metal atom and a second kind of metal atom different from the first kind, onto the body within the reactor; heating the organic compound and thereby decomposing the organic compound molecule for thereby forming a dielectric film having the first kind of metal atom and second kind of metal atom in substantially the same ratio as they existed in the organic compound molecule; wherein said step of providing a body provides the body in a chemical vapor deposition reactor and said steps of supplying, heating, decomposing and forming are conducted as a part of chemical vapor deposition; said forming further reacting the first kind of metal atom with the second kind of metal atom to form a metallic compound in the dielectric film that is different from the organic compound; said step of providing including forming a first conductive film on the body; and after all of said steps, forming a second conductive film on the dielectric film to form a capacitor as at least a part of the electronic device.
Claim 34
Independent Claim
202 words
A method of forming an electronic device, comprising the steps of: providing a body in a reactor; supplying an organic compound, having each molecule comprising at least a first kind of metal atom and a second kind of metal atom different from the first kind, onto the body within the reactor; heating the organic compound and thereby decomposing the organic compound molecule for thereby forming a dielectric film having the first kind of metal atom and second kind of metal atom in substantially the same ratio as they existed in the organic compound molecule; wherein said step of providing a body provides the body in a chemical vapor deposition reactor and said steps of supplying, heating, decomposing and forming are conducted as a part of chemical vapor deposition; said forming further reacting the first kind of metal atom with the second kind of metal atom to form a metallic compound in the dielectric film that is different from the organic compound; said step of providing including forming a first conductive film on the body; and after all of said steps, forming a second conductive film on the dielectric film to form a capacitor as at least a part of the electronic device.
Claim 35
Dependent Claim
18 words
The method of claim 28, wherein all of said steps forms the dielectric film as a ferroelectric oxide.
Claim 36
Dependent Claim
51 words
The method of claim 28, wherein sai first and second conductive films are of a substance exhibiting conductivity after oxidation so that an oxide interface between the dielectric film and each of the first and second conducive films is electrically a part of the conductive films, respectively, not the dielectric film.
Claim 37
Dependent Claim
51 words
The method of claim 29, wherein said first and second conductive films are of a substance exhibiting conductivity after oxidation so that an oxide interface between the dielectric film and each of the first and second conductive films is electrically a part of the conductive films, respectively, not the dielectric film.
Claim 38
Dependent Claim
20 words
The method of claim 15, wherein said step of supplying further supplies a carrier gas for the organic compound molecule.
Claim 39
Dependent Claim
20 words
The method of claim 28, wherein said step of supplying further supplies a carrier gas for the organic compound molecule.
Claim 40
Dependent Claim
51 words
The method of claim 33, wherein said first and second conductive films are of a substance exhibiting conductivity after oxidation so that an oxide interface between the dielectric film and each of the first and second conductive films is electrically a part of the conductive films, respectively, not the dielectric film.
Claim 41
Dependent Claim
84 words
The method of claim 28, wherein said step of forming the first conductive film forms the first conductive film as an oxide with a crystalline lattice structure, and said step of forming a dielectric film forms the dielectric film by epitaxial growth with a crystalline lattice structure at least similar to the crystalline lattice structure of the oxide so than an interface formed between the dielectric film and the first conductive film is a conductive film electrically a part of the first conductive film.
Claim 42
Dependent Claim
51 words
The method of claim 25, wherein said first and second conductive films are of a substance exhibiting conductivity after oxidation so that an oxide interface between the dielectric film and each of the first and second conductive films is electrically a part of the conductive films, respectively, not the dielectric film.
Claim 43
Dependent Claim
20 words
The method of claim 36, wherein said step of supplying further supplies a carrier gas for the organic compound molecule.
Claim 44
Independent Claim
259 words
A method of forming an electronic device, comprising the steps of: providing a body in a reactor; supplying an organic compound, having each molecule comprising at least a first kind of metal atom and a second kind of metal atom different from the first kind, onto the body within the reactor; heating the organic compound and thereby decomposing the organic compound molecule for thereby forming a dielectric film having the first kind of metal atom and second kind of metal atom in substantially the same ratio as they existed in the organic compound molecule; wherein said step of supplying further supplies a carrier gas for the organic compound molecule; said forming further comprising reacting a first kind of metal atom with a second kind of metal atom to form a metallic compound in the dielectric film that is different from the organic compound; said step of supplying, heating, reacting, forming, and decomposing form the dielectric film as a ferroelectric film containing more than 90% of Perovskite type oxide comprising at least one kind of atom in each molecule selected from the group consisting of Pb, Ca, Ba, Sr and one or more kinds of atoms selected from the group consisting of Zr, Ti, Sn, Hf, and as a ferroelectric film with a thickness of less than 0.1 μm; said step of providing including forming a first conductive film on the body; and after all of said steps, forming a second conductive film on the dielectric film to form a capacitor as at least a part of the electronic device.
Claim 45
Independent Claim
259 words
A method of forming an electronic device, comprising the steps of: providing a body in a reactor; supplying an organic compound, having each molecule comprising at least a first kind of metal atom and a second kind of metal atom different from the first kind, onto the body within the reactor; heating the organic compound and thereby decomposing the organic compound molecule for thereby forming a dielectric film having the first kind of metal atom and second kind of metal atom in substantially the same ratio as they existed in the organic compound molecule; wherein said step of supplying further supplies a carrier gas for the organic compound molecule; said forming further comprising reacting a first kind of metal atom with a second kind of metal atom to form a metallic compound in the dielectric film that is different from the organic compound; said step of supplying, heating, reacting, forming, and decomposing form the dielectric film as a ferroelectric film containing more than 90% of Perovskite type oxide comprising at least one kind of atom in each molecule selected from the group consisting of Pb, Ca, Ba, Sr and one or more kinds of atoms selected from the group consisting of Zr, Ti, Sn, Hf, and as a ferroelectric film with a thickness of less than 0.1 μm; said step of providing including forming a first conductive film on the body; and after all of said steps, forming a second conductive film on the dielectric film to form a capacitor as at least a part of the electronic device.
Claim 46
Dependent Claim
84 words
The method of claim 38, wherein said step of forming the first conductive film forms the first conductive film as an oxide with a crystalline lattice structure, and said step of forming a dielectric film forms the dielectric film by epitaxial growth with a crystalline lattice structure at least similar to the crystalline lattice structure of the oxide so than an interface formed between the dielectric film and the first conductive film is a conductive film electrically a part of the first conductive film.
Claim 47
Dependent Claim
51 words
The method of claim 38, wherein said first and second conductive films are of a substance exhibiting conductivity after oxidation so that an oxide interface between the dielectric film and each of the first and second conductive films is electrically a part of the conductive films, respectively, not the dielectric film.
Claim 48
Dependent Claim
52 words
The method of claim 29, wherein said steps of supplying, heating, reacting, forming, and decomposing forms the dielectric film as a ferroelectric film with a thickness of less than 0.1 μm; and wherein all of said steps forms the capacitor with a capacitance at least as great as 20 μF/cm 2 .
Claim 49
Dependent Claim
53 words
The method of claim 29, wherein said step of supplying further includes supplying additional oxygen to accelerate removal of an organic group from the organic compound molecule as a part of said decomposing and simultaneously to supply any oxygen needed for stoichiometric composition of the dielectric film as a part of said reacting.
Claim 50
Dependent Claim
51 words
The method of claim 6, wherein said first and second conductive films are of a substance exhibiting conductivity after oxidation so that an oxide interface between the dielectric film and each of the first and second conductive films is electrically a part of the conductive films, respectively, not the dielectric film.
Claim 51
Dependent Claim
52 words
The method of claim 30 wherein said steps of supplying, heating, reacting, forming, and decomposing forms the dielectric film as a ferroelectric film with a thickness of less than 0.1 μm; and wherein all of said steps forms the capacitor with a capacitance at least as great as 20 μF/cm 2 .
Claim 52
Dependent Claim
53 words
The method of claim 44, wherein said step of supplying further includes supplying additional oxygen to accelerate removal of an organic group from the organic compound molecule as a part of said decomposing and simultaneously to supply any oxygen needed for stoichiometric composition of the dielectric film as a part of said reacting.
Claim 53
Dependent Claim
52 words
The method of claim 43, wherein said steps of supplying, heating, reacting, forming, and decomposing forms the dielectric film as a ferroelectric film with a thickness of less than 0.1 μm; and wherein all of said steps forms the capacitor with a capacitance at least as great as 20 μF/cm 2 .
Claim 54
Dependent Claim
53 words
The method of claim 43, wherein said step of supplying further includes supplying additionally oxygen to accelerate removal of an organic group from the organic compound molecule as a part of said decomposing and simultaneously to supply any oxygen needed for stoichiometric composition of the dielectric film as a part of said reacting.
Claim 55
Independent Claim
104 words
A method of forming a ferroelectric film, comprising the steps of: providing a body in a reactor; supplying onto the body within the reactor an organic compound having each molecule comprising at least a first kind of metal atom and a second kind of metal atom different from the first kind, and a carrier gas for the organic compound molecule; and heating the organic compound and thereby decomposing the organic compound molecule for thereby forming the ferroelectric film having the first kind of metal atom and second kind of metal atom in substantially the same ratio as they existed in the organic compound molecule.
Claim 56
Independent Claim
104 words
A method of forming a ferroelectric film, comprising the steps of: providing a body in a reactor; supplying onto the body within the reactor an organic compound having each molecule comprising at least a first kind of metal atom and a second kind of metal atom different from the first kind, and a carrier gas for the organic compound molecule; and heating the organic compound and thereby decomposing the organic compound molecule for thereby forming the ferroelectric film having the first kind of metal atom and second kind of metal atom in substantially the same ratio as they existed in the organic compound molecule.
Claim 57
Dependent Claim
39 words
The method of claim 48, wherein said forming further reacting the first kind of metal atom with the second kind of metal atom to form a metallic compound in the ferroelectric film that is different from the organic compound.
Claim 58
Dependent Claim
39 words
The method of claim 15, wherein said forming further reacting the first kind of metal atom with the second kind of metal atom to form a metallic compound in the dielectric film that is different from the organic compound.
Claim 59
Dependent Claim
20 words
The method of claim 50, wherein said step of supplying further supplies a carrier gas for the organic compound molecule.
References Cited (Backward Citations)
US5028455A
Cited
US5138401A
Cited
US4931427A
Cited
JPH01251760A
Cited
US4872086A
Cited
JPH02199879A
Cited
US5198269A
Cited
US4982309A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-08-29 | 1998-02-28 | 1998-08-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-08-29 | 2002-02-28 | 2002-08-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-08-29 | 2006-02-28 | 2006-08-30 | $7700.00 | Window Closed / Lapsed |