Electronic devices utilizing superconducting materials

Claim 2

In a superconducting device comprising a semiconductor region and a superconducting region electrically connected to said semiconductor region, the improvement comprising a barrier layer formed at an interface between said semiconductor region and said superconducting region, which barrier layer is such that tunneling currents can be passed therethrough.

Claim 3

The superconducting device of claim 1 wherein said barrier layer comprises a non-oxide material.

Claim 4

The superconducting device of claim 2 wherein said non-oxide material is selected from the group consisting of silicon nitride, silicon carbide and diamond-like carbon.

Claim 5

The superconducting device of claim 1 wherein said barrier layer has a thickness from 10 to 30 Angstroms.

Claim 6

The device of claim 1 wherein said superconducting regions comprise a superconducting material represented by a general formula: (A.sub.1-x B.sub.x).sub.y Cu.sub.z O.sub.w X.sub.v where A is one or more elements selected from the group consisting of Sc, Y, Lanthanides and Actinides, B is one or more elements selected from the group consisting of Be, Mg, Ca, Sr, Ba and Ra, X is one or more elements selected from the group consisting of Ge, Sn, Pb, F and Cl and where x=0-1; y=2-4; z=1-4; w=4-10; and v=0-3.

Claim 7

The device of claim 1 wherein said superconducting regions comprise a superconducting material represented by a general formula: (A.sub.1-x B.sub.x).sub.y Cu.sub.z O.sub.w where A is one or more elements selected from the group consisting of N, P, As, Sb and Bi, B is one or more elements selected from the group consisting of Be, Mg, Ca, Sr, Ba and Ra, where x=0.3-1; y=2-4; z=1-4; and w=4-10.

Claim 8

A superconducting device comprising: a pair of oxide superconducting regions; a semiconductor region formed between said pair of superconducting regions; barrier layers formed at interfaces between said semiconductor region and said superconducting regions for preventing an interaction with each other; a control electrode formed on said semiconductor region for applying an electric field thereto with an insulating layer therebetween; wherein said barrier layers are such that tunneling currents can be passed therethrough.

Claim 9

A superconducting device comprising: a pair of oxide superconducting regions; a semiconductor region formed between said pair of superconducting regions; barrier layers formed at interfaces between said semiconductor region and said superconducting regions for preventing an interaction with each other; a control electrode formed on said semiconductor region for applying an electric field thereto with an insulating layer therebetween; wherein said barrier layers are such that tunneling currents can be passed therethrough.

Claim 10

The device of claim 7 wherein said barrier layers have a thickness from 10 to 30 Angstroms.

Claim 11

The device of claim 7 wherein the barrier layers are insulating layers or semi-insulating layers.

Claim 12

The device of claim 7 wherein said superconducting regions comprise a superconducting material represented by a general formula: (A.sub.1-x B.sub.x).sub.y Cu.sub.z O.sub.w X.sub.v where A is one or more elements selected from the group consisting of Sc, Y, Lanthanides and Actinides, B is one or more elements selected from the group consisting of Be, Mg, Ca, Sr, Ba and Ra, X is one or more elements selected from the group consisting of Ge, Sn, Pb, F and Cl and where x=0-1; y=2-4; z=1-4; w=4-10; and v=0-3.

Claim 13

The device of claim 7 wherein said superconducting regions comprise a superconducting material represented by a general formula: (A.sub.1-x B.sub.x).sub.y Cu.sub.z O.sub.w where A is one or more elements selected from the group consisting of N, P, As, Sb and Bi, B is one or more elements selected from the group consisting of Be, Mg, Ca, Sr, Ba and Ra, where x=0.3-1; y=2-4; z=1-4; and w=4-10.

Claim 14

A superconducting device comprising: a pair of oxide superconducting regions; a semiconductor region formed between said pair of superconducting regions; barrier layers formed at interfaces between said semiconductor region and said superconducting regions for preventing an interaction with each other; a control electrode formed on said semiconductor region for applying an electric field thereto with an insulating layer therebetween; wherein said barrier layers are such that tunneling currents can be passed therethrough and comprise a non-oxide material.

Claim 15

A superconducting device comprising: a pair of oxide superconducting regions; a semiconductor region formed between said pair of superconducting regions; barrier layers formed at interfaces between said semiconductor region and said superconducting regions for preventing an interaction with each other; a control electrode formed on said semiconductor region for applying an electric field thereto with an insulating layer therebetween; wherein said barrier layers are such that tunneling currents can be passed therethrough and comprise a non-oxide material.

Claim 16

The device of claim 12 wherein said barrier layers have a thickness from 10 to 30 Angstroms.

Claim 17

The device of claim 12 wherein the barrier layers are insulating layers or semi-insulating layers.

Claim 18

The device of claim 12 wherein said superconducting regions comprise a superconducting material represented by a general formula: (A.sub.1-x B.sub.x).sub.y Cu.sub.z O.sub.w X.sub.v where A is one or more elements selected from the group consisting of Sc, Y, Lanthanides and Actinides, B is one or more elements selected from the group consisting of Be, Mg, Ca, Sr, Ba and Ra, X is one or more elements selected from the group consisting of Ge, Sn, Pb, F and Cl, and where x=0-1; y=2-4; z=1-4; w=4-10; and v=0-3.

Claim 19

The device of claim 12 wherein said superconducting regions comprise a superconducting material represented by a general formula: (A.sub.1-x B.sub.x).sub.y Cu.sub.z O.sub.w where A is one or more elements selected from the group consisting of N, P, As, Sb and Bi, B is one or more elements selected from the group consisting of Be, Mg, Ca, Sr, Ba and Ra, where x=0.3-1; y=2-4; z=1-4; and w=4-10.

Claim 20

A superconducting device comprising: a pair of oxide superconducting regions; a semiconductor region formed between said pair of superconducting regions; barrier layers formed at interface between said semiconductor region and said superconducting regions for preventing an interaction with each other; a control electrode formed on said semiconductor region for applying an electric field thereto with an insulating layer therebetween; wherein said barrier layers are such that tunneling currents can be passed therethrough and comprise a material selected from the group consisting of silicon nitride, silicon carbide and diamond-like carbon.

Claim 21

A superconducting device comprising: a pair of oxide superconducting regions; a semiconductor region formed between said pair of superconducting regions; barrier layers formed at interface between said semiconductor region and said superconducting regions for preventing an interaction with each other; a control electrode formed on said semiconductor region for applying an electric field thereto with an insulating layer therebetween; wherein said barrier layers are such that tunneling currents can be passed therethrough and comprise a material selected from the group consisting of silicon nitride, silicon carbide and diamond-like carbon.

Claim 22

The device of claim 12 wherein said barrier layers have a thickness from 10 to 30 Angstroms.

Claim 23

The device of claim 12 wherein said superconducting regions comprise a superconducting material represented by a general formula: (A.sub.1-x B.sub.x).sub.y Cu.sub.z O.sub.w X.sub.v where A is one or more elements selected from the group consisting of Sc, Y, Lanthanides and Actinides, B is one or more elements selected from the group consisting of Be, Mg, Ca, Sr, Ba and Ra, X is one or more elements selected from the group consisting of Ge, Sn, Pb, F and Cl, and where x=0-1; y=2-4; z=1-4; w=4-10; and v=0-3.

Claim 24

The device of claim 17 wherein said superconducting regions comprise a superconducting material represented by a general formula: (A.sub.1-x B.sub.x).sub.y Cu.sub.z O.sub.w where A is one or more elements selected from the group consisting of N, P, As, Sb and Bi, B is one or more elements selected from the group consisting of Be, Mg, Ca, Sr, Ba and Ra, where x=0.3-1; y=2-4; z=1-4; and w=4-10.