Abstract A MIS type semiconductor photoelectric conversion device in which a first electrode, a first insulating or semi-insulating layer, a semiconductor layer, a second insulating or semi-insulating layer and a second electrode are formed in this order on a supporting member. The first electrode, the first insulating or semi-insulating layer and the semiconductor layer constitute a first MIS structure which uses the first insulating or semi-insulating layer as a first barrier. The semiconductor layer, the second insulating or semi-insulating layer and the second electrode constitute a second MIS structure which uses the second insulating or semi-insulating layer as a second barrier. The first and second MIS structures are formed on the supporting member in such a manner that they are placed one on the other mechanically and connected in series with each other electrically.
An MIS type semiconductor photoelectric conversion device comprising: a supporting member; a first electrode formed on the supporting member; a first insulating or semi-insulating layer permitting the passage therethrough of a tunnel current and formed as a first barrier on the first electrode; a semiconductor layer formed on the first insulating or semi-insulating layer; a second insulating or semi-insulating layer permitting the passage therethrough of the tunnel current and formed as a second barrier on the semiconductor layer; and a second electrode formed on the second insulating or semi-insulating layer; wherein the first electrode, the first insulating or semi-insulating layer and the semiconductor layer constitute a first MIS structure; the semiconductor layer, the second insulating or semi-insulating layer and the second electrode constitute a second MIS structure; and the first and second MIS structures are formed of the supporting member one over the other mechanically and connected in series with each other electrically.
Claim 2
Dependent Claim
153 words
An MIS type semiconductor photoelectric conversion device comprising: a supporting member; a first electrode formed on the supporting member; a first insulating or semi-insulating layer permitting the passage therethrough of a tunnel current and formed as a first barrier on the first electrode; a semiconductor layer formed on the first insulating or semi-insulating layer; a second insulating or semi-insulating layer permitting the passage therethrough of the tunnel current and formed as a second barrier on the semiconductor layer; and a second electrode formed on the second insulating or semi-insulating layer; wherein the first electrode, the first insulating or semi-insulating layer and the semiconductor layer constitute a first MIS structure; the semiconductor layer, the second insulating or semi-insulating layer and the second electrode constitute a second MIS structure; and the first and second MIS structures are formed of the supporting member one over the other mechanically and connected in series with each other electrically.