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US5342804A
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Method of fabrication of devices with different operating characteristics through a single selective epitaxial growth process
Assignee: Texas Instruments Inc
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Filing: 1993-05-19
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Granted: 1994-08-30
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Expires: 2013-05-19
Abstract
Abstract A semiconductor device structure (10) includes similar devices (30), (32), and (34) having different operating characteristics. Each similar device is formed on a semiconductor substrate layer (14) through openings (16), (18), and (20) in a mask layer (12). Each opening (16), (18), and (20) has a different feature size and spacing that allows for various thickness levels of layers within the similar devices (30), (32), and (34) due to desorption from the mask layer (12). The growth rate within each opening (16), (18), and (20) is inversely proportional to the feature size of the respective opening.
Inventors
- 👤 Edward A. Beam, III
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 16:30
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/01; H10D84/0112; H10D84/02; H10D84/03; H10D84/038; H10P; H10P14/00; H10P14/20; H10P14/27; H10P14/271; Y; Y10; Y10S; Y10S148/00; Y10S148/106; Y10S148/143; Y10S438/00; Y10S438/979
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
90 words
A method of producing similar devices having different operating characteristics in a single selective epitaxial growth, comprising the steps of: forming a substrate layer; selectively masking the substrate layer to form a mask on the substrate layer, the mask having at least a first and a second opening; growing an epitaxial layer within each opening with a different epitaxial layer thickness in said openings; and forming a similar device within each opening, each similar device having different operating characteristics due to a variance in epitaxial layer thickness between each opening.
Claim 2
Independent Claim
90 words
A method of producing similar devices having different operating characteristics in a single selective epitaxial growth, comprising the steps of: forming a substrate layer; selectively masking the substrate layer to form a mask on the substrate layer, the mask having at least a first and a second opening; growing an epitaxial layer within each opening with a different epitaxial layer thickness in said openings; and forming a similar device within each opening, each similar device having different operating characteristics due to a variance in epitaxial layer thickness between each opening.
Claim 3
Dependent Claim
13 words
The method of claim 1, wherein each opening has a different feature size.
Claim 4
Dependent Claim
12 words
The method of claim 1, wherein each similar device is a diode.
Claim 5
Dependent Claim
14 words
The method of claim 3, wherein each similar device has a different breakdown voltage.
Claim 6
Dependent Claim
14 words
The method of claim 1, wherein each similar device is a resonant tunnelling diode.
Claim 7
Dependent Claim
14 words
The method of claim 5, wherein each similar device has a different resonance voltage.
Claim 8
Dependent Claim
12 words
The method of claim 1, wherein each similar device is a transistor.
Claim 9
Dependent Claim
14 words
The method of claim 1, wherein the mask has separate distances between each opening.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-08-29 | 1998-02-28 | 1998-08-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-08-29 | 2002-02-28 | 2002-08-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-08-29 | 2006-02-28 | 2006-08-30 | $7700.00 | Window Closed / Lapsed |