Level shifter circuit constituted of E and I type transistors and an EEPROM using the same

Claim 2

A level shifter circuit comprising: an input terminal for receiving an input signal oscillating between a first power source voltage and a second power source voltage according to a selected mode and non-selected mode; an output terminal for delivering an output signal oscillating between the first and second power source voltages and a third power source voltage; a first N-channel E type transistor having a drain electrode and a source electrode connected between the input terminal and the output terminal and a gate electrode supplied with the first power source voltage, the first N-channel E type transistor having a positive threshold voltage; a first N-channel I type transistor having a source electrode and a drain electrode connected between the input terminal and the output terminal and a gate electrode applied with a control signal oscillating between the first power source voltage and the second power source voltage and determining whether or not a voltage conversion be made, the first N-channel I type transistor having a neutral threshold voltage; and a charge pump circuit connected to the output terminal and operative with the first, second and third power source voltages such that the charge pump circuit is rendered an active state only when the voltage conversion is made.

Claim 3

The level shifter circuit according to claim 1, wherein the input signal input to the input terminal is supplied from at least one of a column decoder and a row decoder in an electrically erasable and programmable read only memory (EEPROM) and the output signal delivered from the output terminal is supplied to a cell matrix array of the EEPROM.

Claim 4

The level shifter circuit according to claim 1, wherein the first power source voltage is at a first high level, the second power source voltage is at a low level and the third power source voltage is at a second high level higher than the first power source voltage.

Claim 5

The level shifter circuit according to claim 3, wherein the first high level is 5 V, the low level is 0 V and the second high level is 20 V.

Claim 6

The level shifter circuit according to claim 1, wherein the charge pump circuit comprise: a second N-channel I type transistor having a gate electrode connected to the output terminal and a drain electrode selectively supplied with the second power source voltage or the third power source; a second N-channel E type transistor having a source electrode connected to the output terminal and a drain electrode and a gate electrode commonly connected to a source electrode of the second N-channel I type transistor; and a third N-channel E type transistor having a gate electrode connected to the source electrode of the second N-channel I type transistor and a source electrode and a drain electrode commonly connected to a clock source.

Claim 7

The level shifter circuit according to claim 2, wherein the control signal input to the gate of the first N-channel I type transistor contains an inverted replica (Erase+Write) of a signal Erase+Write.

Claim 8

The level shifter circuit according to claim 6, wherein, when the EEPROM performs a read operation, the inverted replica (Erase+Write) is input with a voltage equal to the first power source voltage and the charge pump circuit is rendered a non-active state so that the first power source voltage or the second power source voltage input to the input terminal is output from the output terminal via the first N-channel I type transistor.

Claim 9

The level shifter circuit according to claim 6, wherein, when the EEPROM performs an erase operation or a write operation, the inverted replica (Erase+Write) is input with a voltage equal to the second power source voltage and the charge pump circuit is rendered an active state so that the first power source voltage or second power source voltage input to the input terminal passes through the first N-channel E type transistor and is boosted up by the charge pump circuit and the first power source voltage or second power source voltage is converted to the third power source voltage or second power source voltage and output from the output terminal.

Claim 10

The level shifter circuit according to claim 2, wherein the first power source voltage is at a first high level, the second power source voltage is at a low level and the third power source voltage is at a second high level higher than the first power source voltage.

Claim 11

The level shifter circuit according to claim 2, wherein the first high level is 5 V, the low level is 0 V and the second high level is 20 V.

Claim 12

An electrically erasable and programmable read only memory (EEPROM) including a column decoder responsive to a predetermined address input to produce a selected signal or a non-selected signal relating to a column, a row decoder responsive to a predetermined address input to produce a selected signal or a non-selected signal relating to a row, a cell matrix array including a plurality of nonvolatile semiconductor memory cells connected to corresponding output lines of the selected signal and the non-selected signal relating to the column and the selected signal and the non-selected signal relating to the row, and a predetermined number of level shifter circuits arranged between the column and row decoders and connection lines of the cell matrix array, the respective level shifter circuit comprising: an input terminal for receiving an input signal oscillating between a first power source voltage and a second power source voltage in accordance with a selected mode and a non-selected mode; an output terminal for producing an output signal oscillating between the first and second power source voltages and a third power source voltage in accordance with voltage conversion and non-voltage conversion; a first N-channel E type transistor having a drain electrode and a source electrode connected between the input terminal and the output terminal and a gate electrode supplied with the second power source voltage, the first N-channel E type transistor having a positive threshold voltage; a first N-channel I type transistor having a drain electrode and a source electrode connected between the input terminal and the output terminal and a gate electrode applied with a control signal oscillating between the first power source voltage and the second power source voltage and determining whether or not the voltage conversion operation be made, the first N-channel I type transistor having a neutral threshold voltage; and a charge pump circuit connected to the output terminal and operative with the first, second and third power source voltages such that the charge pump circuit is rendered an active state only when the voltage conversion is mode.

Claim 13

An electrically erasable and programmable read only memory (EEPROM) including a column decoder responsive to a predetermined address input to produce a selected signal or a non-selected signal relating to a column, a row decoder responsive to a predetermined address input to produce a selected signal or a non-selected signal relating to a row, a cell matrix array including a plurality of nonvolatile semiconductor memory cells connected to corresponding output lines of the selected signal and the non-selected signal relating to the column and the selected signal and the non-selected signal relating to the row, and a predetermined number of level shifter circuits arranged between the column and row decoders and connection lines of the cell matrix array, the respective level shifter circuit comprising: an input terminal for receiving an input signal oscillating between a first power source voltage and a second power source voltage in accordance with a selected mode and a non-selected mode; an output terminal for producing an output signal oscillating between the first and second power source voltages and a third power source voltage in accordance with voltage conversion and non-voltage conversion; a first N-channel E type transistor having a drain electrode and a source electrode connected between the input terminal and the output terminal and a gate electrode supplied with the second power source voltage, the first N-channel E type transistor having a positive threshold voltage; a first N-channel I type transistor having a drain electrode and a source electrode connected between the input terminal and the output terminal and a gate electrode applied with a control signal oscillating between the first power source voltage and the second power source voltage and determining whether or not the voltage conversion operation be made, the first N-channel I type transistor having a neutral threshold voltage; and a charge pump circuit connected to the output terminal and operative with the first, second and third power source voltages such that the charge pump circuit is rendered an active state only when the voltage conversion is mode.

Claim 14

The EEPROM according to claim 11, wherein the first power source voltage is at a first high level, the second power source voltage is at a low level and the third power source voltage is at a second high level higher than the first power source voltage.

Claim 15

The EEPROM according to claim 12, wherein the first high level is 5 V, the low level is 0 V, and the second high level is 20 V.

Claim 16

The EEPROM according to claim 11, wherein the charge pump circuit comprises: a second N-channel I type transistor having a gate electrode connected to the output terminal and a drain electrode selectively supplied with the second power source voltage or the third power source voltage; a second N-channel E type transistor having a source electrode connected to the output terminal and a drain electrode and a gate electrode commonly connected to a source electrode of the second N-channel I type transistor; and a third N-channel E type transistor having a gate electrode connected to the source electrode of the second N-channel I type transistor and a source electrode and drain electrode commonly connected to a clock source.

Claim 17

The EEPROM according to claim 11, wherein the signal input to the gate electrode of the first N-channel I type transistor includes an inverted replica (Erase+Write) of a signal Erase+Write.

Claim 18

The EEPROM according to claim 15, wherein, when the EEPROM performs a read operation, the inverted replica (Erase+Write) is input with the same voltage as the first power source voltage and the charge pump circuit is rendered an active state so that the first power source voltage or second power source voltage is output from the output terminal via the first N-channel I type transistor.

Claim 19

The EEPROM according to claim 15, wherein, when the EEPROM performs an erase operation or a write operation, the inverted replica (Erase+Write) is input with the same voltage as the second power source voltage and the charge pump circuit is rendered an active state so that the first power source voltage or second power source voltage input to the input terminal passes through the first N-channel E type transistor and is boosted by the charge pump circuit up and the first power source voltage or second power source voltage is converted to the third power source voltage or the second power source voltage and output from the output terminal.