Patent US5338942A successfully refreshed from Google Patents.
US5338942A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor projections having layers with different lattice constants
Assignee: Hitachi Ltd
•
Filing: 1993-01-04
•
Granted: 1994-08-16
•
Expires: 2013-01-04
Abstract
Abstract A semiconductor device comprising a semiconductor crystalline substrate having projections each thereof having an area of 0.01 μm 2 to 4 μm 2 or stripe projections each thereof having a width of 0.01 μm to 1 μm and semiconductor crystalline layers formed on the projections, each of the layers having lattice constants different from those of the semiconductor crystalline substrate preferably by 0.5% or more. The semiconductor device is free of dislocations and thermally stable. The semiconductor device can be fabricated by performing such processes as forming projections on the substrate and forming semiconductor crystalline layers on the projections by molecular beam epitaxy.
Inventors
- 👤 Akio Nishida
- 👤 Eiichi Murakami
- 👤 Kiyokazu Nakagawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 08:17
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/80; H10D62/82; H10D62/10; H10D62/117; H10D62/822; H10P; H10P14/00; H10P14/20; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/2924; H10P14/2925; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
73 words
A semiconductor device comprising: a) a semiconductor crystalline substrate having a plurality of projections each projection having an area of 0.01 μm 2 to 4 μm 2 or having a plurality of stripe projections each stripe projection having a width of 0.01 μm to 1 μm; and b) a semiconductor crystalline layer formed on each of said plurality of projections, said layer having different lattice constants from those of said semiconductor crystalline substrate.
Claim 2
Dependent Claim
73 words
A semiconductor device comprising: a) a semiconductor crystalline substrate having a plurality of projections each projection having an area of 0.01 μm 2 to 4 μm 2 or having a plurality of stripe projections each stripe projection having a width of 0.01 μm to 1 μm; and b) a semiconductor crystalline layer formed on each of said plurality of projections, said layer having different lattice constants from those of said semiconductor crystalline substrate.
Claim 3
Dependent Claim
28 words
A semiconductor device according to claim 1, wherein a difference between the lattice constants of said semiconductor crystalline layer and said semiconductor crystalline substrate equals 0.5% or more.
Claim 4
Dependent Claim
25 words
A semiconductor device according to claim 1, wherein said semiconductor crystalline layer has a super lattice structure formed of semiconductors of two or more kinds.
Claim 5
Dependent Claim
44 words
A semiconductor device according to claim 3, wherein a difference between the average values of the lattice constants of the semiconductors of two or more kinds forming the super lattice structure and the lattice constants of said semiconductor crystalline substrate equals 0.5% or more.
Claim 6
Dependent Claim
50 words
A semiconductor device according to claim 1, wherein said projection has a gate electrode formed thereon for controlling a two-dimensional carrier gas stored in a band discontinuity in a hetero-interface of heterostructure formed on said projection, and said projection constitutes an active region of a modulation dope field effect transistor.
Claim 7
Dependent Claim
25 words
A semiconductor device according to claim 1, wherein a hetero-interface of heterostructure formed on said projection constitutes a blocking layer of a hetero-junction bipolar transistor.
Claim 8
Dependent Claim
26 words
The semiconductor device according to claim 1, wherein a thickness of the semiconductor crystalline layer is between the thickness of one atomic layer and 10 μm.
Claim 9
Dependent Claim
26 words
The semiconductor device according to claim 2, wherein a thickness of the semiconductor crystalline layer is between the thickness of one atomic later and 10 μm.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-08-15 | 1998-02-14 | 1998-08-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-08-15 | 2002-02-14 | 2002-08-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-08-15 | 2006-02-14 | 2006-08-16 | $7700.00 | Window Closed / Lapsed |