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US5338388A
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US
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Method of forming single-crystal semiconductor films
Assignee: Mitsubishi Electric Corp
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Filing: 1992-05-04
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Granted: 1994-08-16
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Expires: 2012-05-04
Abstract
Abstract A method of forming single-crystal semiconductor films, in which a single-crystal semiconductor substrate having a crystal axis transferred from a single-crystal semiconductor substrate is formed on an insulator layer via a seed hole which goes through the insulator layer which is formed on the single-crystal semiconductor substrate, comprises the steps of: forming a non-single-crystal semiconductor substrate connected to a single-crystal semiconductor substrate via a seed hole on an insulator layer; irradiating a compound beam which includes a first energy beam having a power density which is capable of melting a non-single-crystal semiconductor film and a second energy beam having a power density which is not capable of melting the non-single-crystal semiconductor film but capable of softening the insulator layer positioned below the non-single-crystal semiconductor film; and epitaxially growing the single-crystal semiconductor film in such a way that the non-single-crystal semiconductor film is melted and then solidified again by scanning the surface of the non-single-crystal semiconductor film with the compound beam, starting from the seed hole, in such a manner that the first energy beam is irradiated first and the second energy beam is irradiated second.
Inventors
- 👤 Kazuyuki Sugahara
- 👤 Takashi Ipposhi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:46
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; H10P14/3808; H10P14/3814; H10D; H10D84/00; H10D84/01; H10D84/02; H10D84/03; H10D84/038; H10D88/00; H10D88/01; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3238; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3451; H10P14/3452; H10P14/3458; H10P14/3818; H10P14/382; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1912; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/012; H10W10/061; H10W10/10; H10W10/13; H10W10/181; Y; Y10; Y10S; Y10S117/00; Y10S117/903; Y10S117/904
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
187 words
A method of forming single-crystal semiconductor films, in which a single-crystal semiconductor film having crystal axes transferred from a single-crystal semiconductor substrate are formed on an insulator layer via a seed hole which goes through the insulator layer which is formed on the single-crystal semiconductor substrate, said method comprising the steps of: forming a non-single-crystal semiconductor substrate connected to a single-crystal semiconductor substrate via a seed hole formed in said insulator layer positioned below the non-single-crystal semiconductor film; irradiating a compound beam comprising a first energy beam having a power density which is capable of melting a non-single-crystal semiconductor film and a second energy beam having a power density which is not capable of melting the non-single-crystal semiconductor film but is capable of softening said insulator layer; and epitaxially growing the single-crystal semiconductor film in such a way that the non-single-crystal semiconductor film is melted and then solidified again by scanning the surface of the non-single-crystal semiconductor film with the compound beam, starting from the seed hole, in such a manner that the first energy beam is irradiated first and the second energy beam is irradiated second.
Claim 2
Independent Claim
187 words
A method of forming single-crystal semiconductor films, in which a single-crystal semiconductor film having crystal axes transferred from a single-crystal semiconductor substrate are formed on an insulator layer via a seed hole which goes through the insulator layer which is formed on the single-crystal semiconductor substrate, said method comprising the steps of: forming a non-single-crystal semiconductor substrate connected to a single-crystal semiconductor substrate via a seed hole formed in said insulator layer positioned below the non-single-crystal semiconductor film; irradiating a compound beam comprising a first energy beam having a power density which is capable of melting a non-single-crystal semiconductor film and a second energy beam having a power density which is not capable of melting the non-single-crystal semiconductor film but is capable of softening said insulator layer; and epitaxially growing the single-crystal semiconductor film in such a way that the non-single-crystal semiconductor film is melted and then solidified again by scanning the surface of the non-single-crystal semiconductor film with the compound beam, starting from the seed hole, in such a manner that the first energy beam is irradiated first and the second energy beam is irradiated second.
Claim 3
Dependent Claim
15 words
A method according to claim 1 wherein the first energy beam is a laser beam.
Claim 4
Dependent Claim
15 words
A method according to claim 1 wherein the second energy beam is a laser beam.
Claim 5
Dependent Claim
27 words
A method according to claim 1 wherein the second energy beam is an electron beam, the diameter of which is condensed into not greater than 500 μm.
Claim 6
Dependent Claim
27 words
A method according to claim 1 wherein the second energy beam is an infrared beam, the diameter of which is condensed into not greater than 500 μm.
Claim 7
Dependent Claim
31 words
A method according to claim 1 wherein a part of the first energy beam and that of the second energy beam are combined with each other to form a compound beam.
Claim 8
Dependent Claim
22 words
A method according to claim 1 wherein the single-crystal semiconductor substrate is maintained at a temperature of not greater than 800° C.
Claim 9
Dependent Claim
52 words
A method according to claim 1 wherein an upper layer portion of the insulator layer is maintained at a temperature above the softened point thereof over a distance 10 times the thickness of the single-crystal semiconductor film from the extreme end where the single-crystal semiconductor film is grown to the backward portion.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-08-15 | 1998-02-14 | 1998-08-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-08-15 | 2002-02-14 | 2002-08-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-08-15 | 2006-02-14 | 2006-08-16 | $7700.00 | Window Closed / Lapsed |