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US5337172A
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US
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Liquid crystal matrix control employing doped semiconductor pixel electrode surrounded by undoped channel region
Assignee: Thales SA
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Filing: 1992-03-20
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Granted: 1994-08-09
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Expires: 2012-03-20
Abstract
Abstract A matrix display device using electro-optical material, wherein the material is inserted between two substrates, each comprising an array of electrodes. One of these arrays comprises transparent doped semiconductor zones acting as pixel electrodes surrounded by zones with little or no doping, constituting the channel of a control transistor, the electrode of which forms the source or the drain. The gate electrode may be formed as a ladder shaped structure over the channel in which the areas between the rungs are pixel electrodes.
Inventors
- 👤 Jean-Claude Lehureau
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 15:04
CPC Classifications
G; G02; G02F; G02F1/00; G02F1/01; G02F1/13; G02F1/133; G02F1/136; G02F1/1362; G02F1/1368; H; H10; H10D; H10D86/00
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
125 words
A matrix device using electro-optical material, said matrix display device comprising a matrix array of elementary picture zones and, in each elementary zone, an electro-optical material placed between two electrodes, the picture display in each of said zones being a function of an electrical field applied between the two electrodes located in said zone, means for the addressing the electrodes being designed for the selective application, in each of said zones, of a desired electrical field, with a first one of the two electrodes being constituted by a transparent doped semiconductor zone completely surrounded by a substantially undoped semiconductor zone, said substantially undoped semiconductor zone constituting a channel of a control transistor with said first electrode forming a source or a drain of said transistor.
Claim 2
Dependent Claim
125 words
A matrix device using electro-optical material, said matrix display device comprising a matrix array of elementary picture zones and, in each elementary zone, an electro-optical material placed between two electrodes, the picture display in each of said zones being a function of an electrical field applied between the two electrodes located in said zone, means for the addressing the electrodes being designed for the selective application, in each of said zones, of a desired electrical field, with a first one of the two electrodes being constituted by a transparent doped semiconductor zone completely surrounded by a substantially undoped semiconductor zone, said substantially undoped semiconductor zone constituting a channel of a control transistor with said first electrode forming a source or a drain of said transistor.
Claim 3
Dependent Claim
66 words
A display device according to claim 1, wherein the electro-optical material for each said elementary zone is inserted between a first substrate on which columns of second ones of said two electrodes are defined and a second substrate on which each of said first one of said two electrodes are defined by said transistor, with said transistor having a gate aligned with said substantially undoped zones.
Claim 4
Dependent Claim
35 words
A display device according to claim 2, wherein the set of gates of a line is defined by a ladder structure, the rungs of which separate two line electrodes, the uprights defining an addressing line.
Claim 5
Dependent Claim
20 words
A display device according to any of the claims 1 to 3, wherein the electro-optical material is a liquid crystal.
Claim 6
Dependent Claim
17 words
A display device according to claim 4, wherein the liquid crystal is a twisted nematic liquid crystal.
Claim 7
Dependent Claim
20 words
A display device according to any of the claims 1 to 3, wherein the semiconductor is amorphous or polycrystalline silicon.
Claim 8
Dependent Claim
38 words
A display device according to any of the claims 1 to 3, wherein the transistors have a direct multistage structure, the gate being deposited on a gate insulator itself deposited on the zones with little or no doping.
Claim 9
Dependent Claim
36 words
A display device according to any of the claims 1 to 3, wherein the transistors have a reverse multistage structure, the gate being deposited on the substrate and buried beneath the gate insulator and the semiconductor.
Claim 10
Dependent Claim
25 words
A display device according to claim 8, wherein the semiconductor is silicon doped with phosphorus under the action of a laser working through the substrate.
Claim 11
Dependent Claim
48 words
A display device according to claim 8, wherein the selective deposition of phosphorus on the substrate is done after the deposition and the etching of the metal and insulator layers, the silicon being then deposited on the entire unit and locally doped by thermal diffusion of the phosphorus.
References Cited (Backward Citations)
US4204217A
Cited
US4409724A
Cited
US4824213A
Cited
US4537471A
Cited
US4881797A
Cited
US4799094A
Cited
US4876668A
Cited
EP0348209A2
Cited
US5245452A
Cited
US5128786A
Cited
US5191453A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-08-08 | 1998-02-07 | 1998-08-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-08-08 | 2002-02-07 | 2002-08-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-08-08 | 2006-02-07 | 2006-08-09 | $7700.00 | Window Closed / Lapsed |