Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
120 words
An etch rate monitor for monitoring the etch rate of a substrate being etched in an etch chamber comprising a) a light transmissive window in said etch chamber; b) means for applying a collimated light beam through said window near the periphery thereof to said substrate at a normal angle of incidence to the surface of the substrate being etched; c) means for collecting reflected light having multiple diffraction orders of time varying intensity through said window at a substantial angle to the path of said collimated light; d) a photodetector, for said reflected light; and e) means coupled to said photodetector and responsive to the time varying intensity of the collected light for monitoring etch rate in said chamber.
Claim 2
Dependent Claim
120 words
An etch rate monitor for monitoring the etch rate of a substrate being etched in an etch chamber comprising a) a light transmissive window in said etch chamber; b) means for applying a collimated light beam through said window near the periphery thereof to said substrate at a normal angle of incidence to the surface of the substrate being etched; c) means for collecting reflected light having multiple diffraction orders of time varying intensity through said window at a substantial angle to the path of said collimated light; d) a photodetector, for said reflected light; and e) means coupled to said photodetector and responsive to the time varying intensity of the collected light for monitoring etch rate in said chamber.
Claim 3
Dependent Claim
29 words
The etch rate monitor claimed in claim 1 wherein the means for collecting light further comprises: means for directing light diffracted from said wafer surface towards said photodetector means.
Claim 4
Dependent Claim
18 words
The etch rate monitor claimed in claim 2 wherein said means for directing light comprises: transmissive lens means.
Claim 5
Dependent Claim
18 words
The etch rate monitor claimed in claim 2 wherein the means for directing light comprises: curved mirror means.
Claim 6
Dependent Claim
24 words
The etch rate monitor claimed in claim 1 wherein the means for collecting light further comprises: a heat exchanger associated with the photodetector means.
Claim 7
Dependent Claim
36 words
The etch rate monitor claimed in claim 2 wherein the means for collecting reflected light comprises: an interference filter; and a collimating lens for applying light from the means for directing light to the interference filter.
Claim 8
Dependent Claim
23 words
The etch rate monitor claimed in claim 1 wherein the means coupled to the photodetector means determines the cycle period between intensity minima.
Claim 9
Dependent Claim
23 words
The etch rate monitor claimed in claim 1 wherein the means coupled to the photodetector means determines the cycle period between intensity maxima.
Claim 10
Dependent Claim
44 words
The etch rate monitor claimed in claim 1 wherein the means coupled to the photodetector means determines etch rate as a function of a wavelength of the collimated light beam of normal incidence and a cycle period between interference patterns of the diffracted light.
Claim 11
Independent Claim
86 words
A method of monitoring etch rate during semiconductor substrate processing comprising the steps of: a) applying a collimated light beam of normal incidence through a light transmissive window provided in an etch chamber proximate to an edge of said window to the surface of a substrate being processed; b) collecting diffracted light having multiple diffraction orders of time varying intensity therefrom and then detecting the intensity of the diffracted light; and c) detecting changes in the diffracted light intensity to monitor etch rate in the chamber.
Claim 12
Independent Claim
86 words
A method of monitoring etch rate during semiconductor substrate processing comprising the steps of: a) applying a collimated light beam of normal incidence through a light transmissive window provided in an etch chamber proximate to an edge of said window to the surface of a substrate being processed; b) collecting diffracted light having multiple diffraction orders of time varying intensity therefrom and then detecting the intensity of the diffracted light; and c) detecting changes in the diffracted light intensity to monitor etch rate in the chamber.
Claim 13
Dependent Claim
28 words
The method of monitoring etch rate claimed in claim 10, wherein the step of collecting diffracted light further comprises: concentrating said diffracted light prior to detecting its intensity.
Claim 14
Dependent Claim
22 words
The method of monitoring etch rate claimed in claim 11, wherein said step of concentrating said diffracted light uses a transmissive lens.
Claim 15
Dependent Claim
23 words
The method of monitoring etch rate claimed in claim 11, wherein the step of concentrating said diffracted light uses a reflective optical system.
Claim 16
Dependent Claim
20 words
The method of monitoring etch rate claimed in claim 10 wherein the step of collecting diffracted light uses a photodetector.
Claim 17
Dependent Claim
24 words
The etch rate monitor claimed in claim 14 wherein the step of collecting diffracted light further includes: associating a heat exchanger with the photodetector.
Claim 18
Dependent Claim
40 words
The method of monitoring etch rate claimed in claim 11 wherein the step of concentrating said diffracted light further comprises: collimating the diffracted light to produce a collimated, diffracted light; and applying the collimated, diffracted light to an interference filter.
Claim 19
Dependent Claim
27 words
The method of monitoring etch rate claimed in claim 10 wherein the detecting changes step further comprises the step of; determining a cycle period between intensity minima.
Claim 20
Dependent Claim
27 words
The method of monitoring etch rate claimed in claim 10 wherein the detecting changes step further comprises the step of; determining a cycle period between intensity maxima.
Claim 21
Dependent Claim
47 words
The method of monitoring etch rate in claim 10 wherein the detecting changes step further comprises the step of: determining the etch rate as a function of a wavelength of the collimated light of normal incidence and the cycle period between interference patterns of the diffracted light.