Photoelectro-chemical etching method and apparatus of compound semiconductor

Claim 1

An system for electro-chemical etching of a compound semiconductor which comprises: a laser for generating a laser beam as a light source for electro-chemically etching the compound semiconductor; means for generating a waveform having a period; a shutter means to cut off the laser beam emitted from the laser generator in accordance with the waveform period; means for chopping the laser beam to break off laser beam through said shutter; a secondary high reflection mirror to emit the laser beam being broken off by the laser beam chopper; means for expanding the laser beam emitted by the secondary high reflection mirror; a primary reflection means comprising a high reflection mirror and a glass plane on which said compound semiconductor is positioned, said reflection mirror and said glass being disposed adjacent to one another at right angles, the expanded laser beam from the expanding means being directed at the primary reflection means for forming an etching pattern on the surface of the compound semiconductor, the primary reflection means being disposed in an optical glass cell adapted to contain an etching solution; a control means for controlling said means for chopping the laser beam, said control means being connected between said laser chopping means and said means for generating a waveform; and a potentiostat means comprising electrodes for applying a voltage across the compound semiconductor corresponding to the waveform received from the waveform generator, the potentiostat means being connected to said waveform generating means and across said compound semiconductor, whereby said semiconductor device is etched in accordance with the waveform generated by said waveform generating means.

Claim 2

An system for electro-chemical etching of a compound semiconductor which comprises: a laser for generating a laser beam as a light source for electro-chemically etching the compound semiconductor; means for generating a waveform having a period; a shutter means to cut off the laser beam emitted from the laser generator in accordance with the waveform period; means for chopping the laser beam to break off laser beam through said shutter; a secondary high reflection mirror to emit the laser beam being broken off by the laser beam chopper; means for expanding the laser beam emitted by the secondary high reflection mirror; a primary reflection means comprising a high reflection mirror and a glass plane on which said compound semiconductor is positioned, said reflection mirror and said glass being disposed adjacent to one another at right angles, the expanded laser beam from the expanding means being directed at the primary reflection means for forming an etching pattern on the surface of the compound semiconductor, the primary reflection means being disposed in an optical glass cell adapted to contain an etching solution; a control means for controlling said means for chopping the laser beam, said control means being connected between said laser chopping means and said means for generating a waveform; and a potentiostat means comprising electrodes for applying a voltage across the compound semiconductor corresponding to the waveform received from the waveform generator, the potentiostat means being connected to said waveform generating means and across said compound semiconductor, whereby said semiconductor device is etched in accordance with the waveform generated by said waveform generating means.

Claim 6

A method of electro-chemically etching a compound semiconductor which comprises: generating a laser beam as a light source for electro-chemically etching the compound semiconductor; generating a waveform having a period; cutting off the laser beam emitted from the laser generator in accordance with the waveform period; chopping the laser beam to break off laser beam emitted through said shutter; expanding the chopped laser beam and directing the expanded laser beam onto a primary reflection mirror, the primary reflection mirror comprising a high reflection mirror and a glass plane on which said compound semiconductor is positioned, said reflection mirror and said glass being disposed adjacent to one another at right angles, the expanded laser beam from the expanding means being directed at the primary reflection means and forming an interference etching pattern on the surface of the compound semiconductor; applying a voltage across the compound semiconductor corresponding to the waveform received from the waveform generator with a potentiostat, the potentiostat being connected to said waveform generating means and across said compound semiconductor; whereby said semiconductor device is etched in accordance with the waveform generated by said waveform generating means.

Claim 7

A method of electro-chemically etching a compound semiconductor which comprises: generating a laser beam as a light source for electro-chemically etching the compound semiconductor; generating a waveform having a period; cutting off the laser beam emitted from the laser generator in accordance with the waveform period; chopping the laser beam to break off laser beam emitted through said shutter; expanding the chopped laser beam and directing the expanded laser beam onto a primary reflection mirror, the primary reflection mirror comprising a high reflection mirror and a glass plane on which said compound semiconductor is positioned, said reflection mirror and said glass being disposed adjacent to one another at right angles, the expanded laser beam from the expanding means being directed at the primary reflection means and forming an interference etching pattern on the surface of the compound semiconductor; applying a voltage across the compound semiconductor corresponding to the waveform received from the waveform generator with a potentiostat, the potentiostat being connected to said waveform generating means and across said compound semiconductor; whereby said semiconductor device is etched in accordance with the waveform generated by said waveform generating means.