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US4622114A Expired / Lapsed US ⏱️ 0.0 years remaining

Process of producing devices with photoelectrochemically produced gratings

Assignee: Nokia Bell Labs
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Filing: 1984-12-20
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Granted: 1986-11-11
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Expires: 2004-12-20
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Abstract

Abstract A photoelectrochemical etching process is described for producing gratings in various semiconductors. Because this is a direct, single step process, extreme uniformity is obtained over a wide area. The procedure is particularly useful for mode reflection in distributed feedback lasers.

Inventors

  • 👤 Alastair M. Glass
  • 👤 Paul A. Kohl
  • 👤 Richard M. Lum
  • 👤 Frederick W. Ostermayer, Jr.

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-30 20:56
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/10; H01S5/12; C; C25; C25F; C25F3/00; C25F3/02; C25F3/12; G; G02; G02B; G02B6/00; G02B6/10; G02B6/12; G02B6/122; G02B6/124; H10; H10P; H10P50/00; H10P50/60; H10P50/61; H10P50/617; H01S5/1231; H01S5/40; H01S5/4025; H01S5/4031; H01S5/4062; H01S5/4087

Claims Analysis

Total Claims: 18
Claim 1
Independent Claim 206 words
A process for making a device comprising a pattern on a semiconductor surface in which said pattern is an optical grating consisting of an array of parallel lines of light with periodicity of less than 5.0 μm and is made by a procedure comprising the step of photoelectrochemically etching at least part of the surface of the semiconductor to produce oxidized species by passing current through the semiconductor, an electrolytic solution and a cathode, said electrolytic solution comprising an aqueous solution of at least one acid selected from the group consisting of HCl, HBr and H 2 SO 4 with a total acid concentration ranging from 1 to 5 molar and a conductivity greater than 0.0001 mhos/cm in which the step further comprises: a. applying a potential to the semiconductor between the maximum potential of the valence band of the semiconductor in the electrolytic solution and the minimum potential of the conduction band of the semiconductor in the electrolytic solution; b. illuminating the part of the surface of the semiconductor to be etched with radiation of sufficient energy to produce holes in the valence band; c. including in the composition of the electrolytic solution species which removes the oxidized species from the surface of the semiconductor.
Claim 2
Dependent Claim 206 words
A process for making a device comprising a pattern on a semiconductor surface in which said pattern is an optical grating consisting of an array of parallel lines of light with periodicity of less than 5.0 μm and is made by a procedure comprising the step of photoelectrochemically etching at least part of the surface of the semiconductor to produce oxidized species by passing current through the semiconductor, an electrolytic solution and a cathode, said electrolytic solution comprising an aqueous solution of at least one acid selected from the group consisting of HCl, HBr and H 2 SO 4 with a total acid concentration ranging from 1 to 5 molar and a conductivity greater than 0.0001 mhos/cm in which the step further comprises: a. applying a potential to the semiconductor between the maximum potential of the valence band of the semiconductor in the electrolytic solution and the minimum potential of the conduction band of the semiconductor in the electrolytic solution; b. illuminating the part of the surface of the semiconductor to be etched with radiation of sufficient energy to produce holes in the valence band; c. including in the composition of the electrolytic solution species which removes the oxidized species from the surface of the semiconductor.
Claim 3
Dependent Claim 14 words
The process of claim 1 in which the periodicity is less than 1.0 μm.
Claim 4
Dependent Claim 14 words
The process of claim 2 in which the periodicity is less than 0.5 μm.
Claim 5
Dependent Claim 19 words
The process of claim 1 in which the array of parallel lines of light is a light interference pattern.
Claim 6
Dependent Claim 11 words
The process of claim 1 in which the semiconductor is n-type.
Claim 7
Dependent Claim 20 words
The process of claim 1 in which the semiconductor is InP or semiconducting compound which is lattice matched to InP.
Claim 8
Dependent Claim 20 words
The process of claim 6 in which the potential varies from -0.5 volts to +1.0 volts on the SCE scale.
Claim 9
Dependent Claim 20 words
The process of claim 7 in which the potential varies from -0.1 volts to +0.5 volts on the SCE scale.
Claim 10
Dependent Claim 15 words
The process of claim 1 in which the acid is H 2 SO 4 .
Claim 11
Dependent Claim 16 words
The process of claim 9 in which the electrolytic solution comprises in addition an oxidizing agent.
Claim 12
Dependent Claim 12 words
The process of claim 10 in which the oxidizing agent is peroxide.
Claim 13
Dependent Claim 15 words
The process of claim 1 in which the device is an optical, wavelength division multiplexer/demultiplexer.
Claim 14
Dependent Claim 15 words
The process of claim 1 in which the device is a distributed feedback semiconductor laser.
Claim 15
Dependent Claim 27 words
The process of claim 13 in which the laser comprises a substrate comprising n-InP and the grating is etched into the substrate in accordance with the invention.
Claim 16
Dependent Claim 41 words
The process of claim 14 in which the semiconductor laser has a double channel planar buried heterostructure with the following layers on top of the substrate: n-type InGaAsP, undoped layer of InGaAsP, p-type InGaAsp, p-type InP, n-type InP and p-type InGaAs.
Claim 17
Dependent Claim 23 words
The process of claim 13 in which the grating is located in one of the epitaxial layers lattice matched to the InP substrate.
Claim 18
Dependent Claim 13 words
The process of claim 16 in which the grating has a ribbed structure.

References Cited (Backward Citations)

DE1193335B Cited
US3706645A Cited
GB1535061A Cited
FR2382523A1 Cited
US4351706A Cited
US4369099A Cited
US4389291A Cited
US4404072A Cited
US4482442A Cited
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US4415414A Cited
US4482443A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1989-11-10 1990-05-12 1990-11-11 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1993-11-10 1994-05-12 1994-11-11 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1997-11-10 1998-05-12 1998-11-11 $7700.00 Window Closed / Lapsed

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