US5334835A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Probe drive mechanism and electronic device which uses the same
Assignee: Canon Inc
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Filing: 1992-09-28
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Granted: 1994-08-02
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Expires: 2012-09-28
Abstract
Abstract A probe drive mechanism includes a cantilever portion in which a piezoelectric layer is disposed between electrode layers, and a circuit portion which is positioned adjacent to the cantilever portion and drives the cantilever. The cantilever portion and the circuit portion are formed on the same substrate. A protection layer covers the circuit portion and part of the substrate, and the cantilever portion is formed on the protection layer adjacent to the circuit portion.
Inventors
- 👤 Masaru Nakayama
- 👤 Osamu Takamatsu
- 👤 Takayuki Yagi
- 👤 Keisuke Yamamoto
- 👤 Takehiko Kawasaki
- 👤 Yasuhiro Shimada
- 👤 Yoshio Suzuki
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 04:27
CPC Classifications
G; G01; G01Q; G01Q60/00; G01Q60/10; G01Q60/16; G01Q70/00; G01Q70/06; G11; G11B; G11B9/00; G11B9/12; G11B9/14; G11B9/1409; G11B9/1418; G01Q80/00; G11B5/00; G11B5/48; G11B5/4806; G11B5/486; Y; Y10; Y10S; Y10S148/00; Y10S148/159; Y10S977/00; Y10S977/70; Y10S977/724; Y10S977/732; Y10S977/832; Y10S977/837; Y10S977/84; Y10S977/849; Y10S977/86; Y10S977/861; Y10S977/873; Y10S977/875; Y10S977/88; Y10S977/881; Y10S977/902; Y10S977/932; Y10S977/943; Y10S977/947
Claims Analysis
Total Claims: 38
Claim 1
Independent Claim
94 words
A probe drive mechanism, comprising: a cantilever portion having a piezoelectric layer disposed between electrode layers, a micro-tip for detecting a tunnel current and an electrode for receiving said tunnel current; a processing circuit portion, positioned adjacent to said cantilever portion, which drives said cantilever portion and detects and amplifies said tunnel current; a substrate for supporting said cantilever portion and said processing portion; and a protection layer covering said circuit portion and a portion of said substrate, wherein said cantilever portion is formed on said protection layer adjacent to said processing circuit portion.
Claim 2
Dependent Claim
94 words
A probe drive mechanism, comprising: a cantilever portion having a piezoelectric layer disposed between electrode layers, a micro-tip for detecting a tunnel current and an electrode for receiving said tunnel current; a processing circuit portion, positioned adjacent to said cantilever portion, which drives said cantilever portion and detects and amplifies said tunnel current; a substrate for supporting said cantilever portion and said processing portion; and a protection layer covering said circuit portion and a portion of said substrate, wherein said cantilever portion is formed on said protection layer adjacent to said processing circuit portion.
Claim 3
Dependent Claim
23 words
A probe drive mechanism according to claim 1, wherein the thickness of said protection layer is in a range from 3000Å to 12000Å.
Claim 4
Dependent Claim
23 words
A probe drive mechanism according to claim 1, wherein the thickness of said protection layer is in a range from 5000Å to 12000Å.
Claim 5
Dependent Claim
15 words
A probe drive mechanism according to claim 1, wherein said substrate is made of silicon.
Claim 6
Dependent Claim
24 words
A probe drive mechanism according to claim 1, wherein material of said electrode layer in said circuit portion is aluminum or an aluminum-silicon alloy.
Claim 7
Dependent Claim
21 words
A probe drive mechanism according to claim 1, wherein said processing circuit portion includes a first insulating layer of silicon oxide.
Claim 8
Dependent Claim
21 words
A probe drive mechanism according to claim 1, wherein said processing circuit portion includes a second insulating layer of silicon oxide.
Claim 9
Dependent Claim
18 words
A probe drive mechanism according to claim 1, wherein said cantilever includes an electrode made of noble metal.
Claim 10
Dependent Claim
46 words
A probe drive mechanism according to claim 1, wherein the piezoelectric material in said cantilever portion is selected from a group consisting of AlN, ZnO, Ta 2 O 3 , PbTiO 3 , Bi 4 Ti 3 O 12 , BaTiO 3 and LiNbO 3 .
Claim 11
Dependent Claim
25 words
A probe drive mechanism according to claim 1, wherein the material of said protection layer is SiON, Si 3 N 4 or SiO 2 .
Claim 12
Dependent Claim
116 words
A probe drive mechanism, comprising: a cantilever portion having a piezoelectric layer disposed between electrode layers, a micro-tip for detecting a tunnel current and an electrode for receiving said tunnel current; a processing circuit portion positioned adjacent to said cantilever portion which drives said cantilever portion and detects and amplifies said tunnel current; a substrate for supporting said cantilever portion and said circuit portion; and a protection layer covering said circuit portion and a portion of said substrate, wherein said cantilever portion is formed on said protection layer adjacent to said circuit portion, and said piezoelectric layer of said cantilever portion is composed of a plurality of stacked layers having polarization axes in different polarization directions.
Claim 13
Dependent Claim
116 words
A probe drive mechanism, comprising: a cantilever portion having a piezoelectric layer disposed between electrode layers, a micro-tip for detecting a tunnel current and an electrode for receiving said tunnel current; a processing circuit portion positioned adjacent to said cantilever portion which drives said cantilever portion and detects and amplifies said tunnel current; a substrate for supporting said cantilever portion and said circuit portion; and a protection layer covering said circuit portion and a portion of said substrate, wherein said cantilever portion is formed on said protection layer adjacent to said circuit portion, and said piezoelectric layer of said cantilever portion is composed of a plurality of stacked layers having polarization axes in different polarization directions.
Claim 14
Dependent Claim
23 words
A probe drive mechanism according to claim 11, wherein the thickness of said protection layer is in a range from 3000Å to 12000Å.
Claim 15
Dependent Claim
23 words
A probe drive mechanism according to claim 11, wherein the thickness of said protection layer is in a range from 5000Å to 12000Å.
Claim 16
Dependent Claim
15 words
A probe drive mechanism according to claim 11, wherein said substrate is made of silicon.
Claim 17
Dependent Claim
23 words
A probe drive mechanism according to claim 11, wherein said circuit portion includes an electrode layer made of aluminum or an aluminum-silicon alloy.
Claim 18
Dependent Claim
21 words
A probe drive mechanism according to claim 11, wherein said processing circuit portion includes a first insulating layer of silicon oxide.
Claim 19
Dependent Claim
21 words
A probe drive mechanism according to claim 11, wherein said processing circuit portion includes a second insulating layer of silicon oxide.
Claim 20
Dependent Claim
21 words
A probe drive mechanism according to claim 11, wherein material of said electrode layers in said cantilever portion is noble metal.
Claim 21
Dependent Claim
46 words
A probe drive mechanism according to claim 11, wherein said piezoelectric material in said cantilever portion is selected from a group consisting of AlN, ZnO, Ta 2 O 3 , PbTiO 3 , Bi 4 Ti 3 O 12 , BaTiO 3 and LiNbO 3 .
Claim 22
Dependent Claim
45 words
A probe drive mechanism according to claim 11, wherein an interface of said piezoelectric layer has an intermediate layer disposed between upper and lower layers, and said intermediate layer has a polarization direction different from the polarization direction of said upper and lower piezoelectric layers.
Claim 23
Dependent Claim
51 words
A probe drive mechanism according to claim 11, wherein said piezoelectric layer includes an upper, a lower and an intermediate layer disposed between said upper and lower layers, and the polarization direction of polarization axes of said piezoelectric layer continuously changes between said upper and lower layer and said intermediate layer.
Claim 24
Dependent Claim
39 words
A probe drive mechanism according to claim 11, wherein said piezoelectric layer has a plurality of stacked layers, each of which is deposited so that spontaneous polarization directions thereof become different at the time of depositing said piezoelectric layer.
Claim 25
Dependent Claim
24 words
A probe drive mechanism according to claim 11, wherein the thickness of said piezoelectric layer is in a range from 500Å to 10 μm.
Claim 26
Dependent Claim
30 words
A probe drive mechanism according to claim 11, wherein the thickness of said electrode layers is in a range from 1/3 to 1/10 of the thickness of said piezoelectric layer.
Claim 27
Dependent Claim
22 words
A probe drive mechanism according to claim 11, wherein said piezoelectric layer has a plurality of layers made of the same material.
Claim 28
Dependent Claim
25 words
A probe drive mechanism according to claim 11, wherein the material of said protection layer is SiON, Si 3 N 4 or SiO 2 .
Claim 29
Dependent Claim
114 words
A multiple probe drive mechanism, comprising: a plurality of probe drive mechanisms, each comprising: a cantilever portion having a piezoelectric layer disposed between electrode layers, a micro-tip for detecting a tunnel current and an electrode for receiving the tunnel current; a processing circuit portion, positioned adjacent to said cantilever portion, which drives said cantilever portion and detects and amplifies the tunnel current; a substrate for supporting said cantilever portion and said processing portion; and a protection layer covering said circuit portion and a portion of said substrate, wherein said cantilever portion is formed on said protection layer adjacent to said processing circuit portion, wherein said probe drive mechanisms are formed on the same substrate.
Claim 30
Dependent Claim
114 words
A multiple probe drive mechanism, comprising: a plurality of probe drive mechanisms, each comprising: a cantilever portion having a piezoelectric layer disposed between electrode layers, a micro-tip for detecting a tunnel current and an electrode for receiving the tunnel current; a processing circuit portion, positioned adjacent to said cantilever portion, which drives said cantilever portion and detects and amplifies the tunnel current; a substrate for supporting said cantilever portion and said processing portion; and a protection layer covering said circuit portion and a portion of said substrate, wherein said cantilever portion is formed on said protection layer adjacent to said processing circuit portion, wherein said probe drive mechanisms are formed on the same substrate.
Claim 31
Dependent Claim
31 words
A probe drive mechanism according to claim 27, wherein said piezoelectric layer in said cantilever portion is composed of a plurality of stacked layers having polarization axes in different polarization directions.
Claim 32
Dependent Claim
25 words
A probe drive mechanism according to claim 28, wherein the material of said protection layer is SiON, Si 3 N 4 or SiO 2 .
Claim 33
Dependent Claim
135 words
A scanning tunnel microscope, comprising: a cantilever portion having a piezoelectric layer disposed between electrode layers, a micro-tip for detecting a tunnel current and an electrode for receiving the tunnel current; a processing circuit portion, positioned adjacent to said cantilever portion, which drives said cantilever portion and detects and amplifies the tunnel current; a substrate for supporting said cantilever portion and said processing portion; a protection layer covering said circuit portion and a portion of said substrate, wherein said cantilever portion is formed on said protection layer adjacent to said processing circuit portion; means for relatively moving said micro-tip with respect to a sample having a surface to be observed; means for applying voltage between said micro-tip and the sample; and means for detecting an electric current which passes between said micro-tip and the sample.
Claim 34
Dependent Claim
135 words
A scanning tunnel microscope, comprising: a cantilever portion having a piezoelectric layer disposed between electrode layers, a micro-tip for detecting a tunnel current and an electrode for receiving the tunnel current; a processing circuit portion, positioned adjacent to said cantilever portion, which drives said cantilever portion and detects and amplifies the tunnel current; a substrate for supporting said cantilever portion and said processing portion; a protection layer covering said circuit portion and a portion of said substrate, wherein said cantilever portion is formed on said protection layer adjacent to said processing circuit portion; means for relatively moving said micro-tip with respect to a sample having a surface to be observed; means for applying voltage between said micro-tip and the sample; and means for detecting an electric current which passes between said micro-tip and the sample.
Claim 35
Dependent Claim
31 words
A scanning tunnel microscope according to claim 30, wherein said piezoelectric layer in said cantilever portion is composed of a plurality of stacked layers having polarization axes in different polarization directions.
Claim 36
Dependent Claim
25 words
A scanning tunnel microscope according to claim 30, wherein the material of said protection layer is SiON, Si 3 N 4 or SiO 2 .
Claim 37
Independent Claim
149 words
A method of using a probe drive mechanism in a scanning tunnel microscope, the probe drive mechanism having a cantilever portion with a piezoelectric layer disposed between electrode layers, a micro-tip for detecting a tunnel current and an electrode for receiving said tunnel current, a processing circuit portion, positioned adjacent to the cantilever portion, which drives the cantilever portion and detects and amplifies the tunnel current, a substrate for supporting the cantilever portion and the processing portion, a protection layer covering the circuit portion and a portion of said substrate, wherein the cantilever portion is formed on the protection layer adjacent to the processing circuit portion, said method comprising the steps of: relatively moving the micro-tip with respect to a sample having a surface to be observed; applying a voltage between the micro-tip and the sample, and detecting an electric current which passes between the micro-tip and the sample.
Claim 38
Independent Claim
149 words
A method of using a probe drive mechanism in a scanning tunnel microscope, the probe drive mechanism having a cantilever portion with a piezoelectric layer disposed between electrode layers, a micro-tip for detecting a tunnel current and an electrode for receiving said tunnel current, a processing circuit portion, positioned adjacent to the cantilever portion, which drives the cantilever portion and detects and amplifies the tunnel current, a substrate for supporting the cantilever portion and the processing portion, a protection layer covering the circuit portion and a portion of said substrate, wherein the cantilever portion is formed on the protection layer adjacent to the processing circuit portion, said method comprising the steps of: relatively moving the micro-tip with respect to a sample having a surface to be observed; applying a voltage between the micro-tip and the sample, and detecting an electric current which passes between the micro-tip and the sample.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-08-01 | 1998-01-31 | 1998-08-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-08-01 | 2002-01-31 | 2002-08-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-08-01 | 2006-01-31 | 2006-08-02 | $7700.00 | Window Closed / Lapsed |