Fuse construction of a semiconductor device

Claim 2

A fuse structure for a semiconductor device that includes a fuse body incorporated in an internal wiring of the semiconductor device and connecting end electrode portions provided at both ends of the fuse body, said fuse structure having at least one fusing voltage charging electrode provided in said fuse body and between said end electrode portions to drive a fusing current for fusing said fuse body by resistance heating.

Claim 3

A fuse structure for a semiconductor device as set forth in claim 1, wherein said fuse body is formed with mutually separated two thin width lines connecting said connecting end electrode portions at both ends, and at least one of said thin width lines is provided with at least one fusing voltage charging electrode portion.

Claim 4

A fuse structure for a semiconductor device as set forth in claim 1, wherein said fuse body is formed with mutually separated three thin width lines connecting said connecting end electrode portions at both ends, and at least the two outer lines among said thin width lines are provided with at least one fusing voltage charging electrode portion.

Claim 5

A fuse structure to be incorporated in an internal wiring of a semiconductor device, comprising: a fuse body: first electrodes provided at both ends of said fuse body for connecting said fuse body with other circuit systems; and at least one second electrode connected to said fuse body independently of said first electrodes for providing thereto a fusing voltage to fuse the fuse body by resistance heating.

Claim 6

A fuse structure to be incorporated in an internal wiring of a semiconductor device, comprising: a fuse body: first electrodes provided at both ends of said fuse body for connecting said fuse body with other circuit systems; and at least one second electrode connected to said fuse body independently of said first electrodes for providing thereto a fusing voltage to fuse the fuse body by resistance heating.

Claim 7

A fuse structure for a semiconductor device as set forth in claim 4, wherein the length of said fuse body placed between said at least one second electrode and one of said first electrodes, or between two of said second electrodes when at least two of said second electrodes are provided along said fuse body, is shorter than the length of said fuse body placed between said first electrodes.

Claim 8

A fuse structure for a semiconductor device as set forth in claim 4, wherein said fuse body includes a polycrystalline silicon in a material thereof.

Claim 9

A fuse structure for a semiconductor device as set forth in claim 4, wherein said fuse body is formed with a plurality of mutually separated thin width lines connected between said first electrodes.

Claim 10

A fuse structure for a semiconductor device as set forth in claim 7, wherein at least one second electrode is connected to at least one of said thin width lines.

Claim 11

A fuse structure for a semiconductor device including at least one charging electrode connected along a fusible electrical path capable of being melt-cut anywhere along its length, this length being defined by the distance between adjacent end electrodes, said adjacent end electrodes also being connected to the fusible electrical path at respective first and second ends thereof, said at least one charging electrode receiving a fusing voltage during a fusing operation and no voltage during a non-fusing or normal operation, said fusible electrical path being adapted to be melt-cut along a predetermined portion of the fusible electrical path when a fusing current is applied to said at least one charging electrode, wherein the fusible electrical path is of sufficient resistance to prevent it from being melt-cut during normal operation, and wherein the predetermined fusing intensity of the fusing voltage is set sufficiently high to create a melt-cut in the fusible electrical path but not so high as to damage circuit elements connected across the adjacent end electrodes.

Claim 12

A fuse structure for a semiconductor device including at least one charging electrode connected along a fusible electrical path capable of being melt-cut anywhere along its length, this length being defined by the distance between adjacent end electrodes, said adjacent end electrodes also being connected to the fusible electrical path at respective first and second ends thereof, said at least one charging electrode receiving a fusing voltage during a fusing operation and no voltage during a non-fusing or normal operation, said fusible electrical path being adapted to be melt-cut along a predetermined portion of the fusible electrical path when a fusing current is applied to said at least one charging electrode, wherein the fusible electrical path is of sufficient resistance to prevent it from being melt-cut during normal operation, and wherein the predetermined fusing intensity of the fusing voltage is set sufficiently high to create a melt-cut in the fusible electrical path but not so high as to damage circuit elements connected across the adjacent end electrodes.

Claim 13

The fuse structure of claim 9, wherein said fusible electrical path is formed having two mutually separated thin width lines connected between said adjacent end electrodes, said at least one charging electrode being coupled to at least one of said thin width lines.

Claim 14

The fuse structure of claim 9, wherein said fusible electrical path is formed having three mutually separated thin width lines connected between said adjacent end electrodes, at least two of said thin width lines being coupled to corresponding ones of said at least one charging electrode.

Claim 15

The fuse structure of claim 9, wherein said fusible electrical path is formed from a polycrystalline silicon material.

Claim 16

The fuse structure of claim 9, wherein said fusible electrical path is formed having a plurality of mutually separated thin width lines connected between said adjacent end electrodes, said at least one charging electrode being coupled to at least one of said plurality of thin width lines.

Claim 17

The fuse structure of claim 9, wherein said at least one charging electrode includes a single charging electrode connected to said fusible electrical path so as to receive the fusing voltage across said single charging electrode and one of said adjacent electrodes, said one adjacent electrode being connected on the first end of said fusible electrical path and the other of said adjacent electrodes being connected at the second end of said fusible electrical path, the fusing voltage causing a melt-cut at the predetermined portion of the fusible electrical path located between said single charging electrode and said first end.

Claim 18

The fuse structure of claim 9, wherein said at least one charging electrode includes two charging electrodes connected to said fusible electrical path so as to receive the fusing voltage thereacross, the fusing voltage causing a melt-cut at the predetermined portion of the fusible electrical path located between said two charging electrodes, as well as between the first and second ends of said fusible electrical path corresponding respectively to the position of each of said adjacent electrodes.