JPS5772367A
Expired / Lapsed
JP
⏱️ 0.0 years remaining
Fusing type semiconductor device
Assignee: Toshiba Corp
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Filing: 1980-10-24
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Granted: —
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Expires: 2000-10-24
Abstract
Abstract PURPOSE:To prevent the remarkable drop of fuse resistance by partially changing silicon composing fuse into a metallic silicide in a fusing type PROM cell. CONSTITUTION:The pad sections 31 of the fuse are turned into the metallic silicide, contacting property with wiring metal is improved and resistance value at the pad sections 31 is lowered. The resistance value of the fuse does not drop remarkably because the resistance of a fuse section 32 is mainly effective. Accordingly, the small fuse having high reliability can be obtained by changing one part of the fuse into the metallic silicide.
Inventors
- 👤 Satoshi Shinozaki
Bibliographic Details
Application Number
—
Jurisdiction
JP
Data Source
google_patents
Last Synchronized
2026-11-05 03:33
CPC Classifications
G; G11; G11C; G11C17/00; G11C17/14; G11C17/16
Claims Analysis
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