US5329169A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Voltage dropping circuit for semiconductor device
Assignee: Sharp Corp
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Filing: 1992-08-28
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Granted: 1994-07-12
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Expires: 2012-08-28
Abstract
Abstract A voltage dropping circuit for a semiconductor device is provided. The voltage dropping circuit includes a control unit for producing a reference voltage from a first specified voltage, an output unit for generating a second specified voltage which is a half of the first specified voltage in accordance with the reference voltage, a timer circuit for generating a driving pulse which becomes active intermittently, and a switch circuit for operating the control unit when the driving pulse is active and stopping the operation of the control unit when the driving pulse is not active.
Inventors
- 👤 Makoto Ihara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-08 15:43
CPC Classifications
G; G05; G05F; G05F3/00; G05F3/02; G05F3/08; G05F3/10; G05F3/16; G05F3/20; G05F3/24; G05F3/242
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
214 words
A voltage dropping circuit mounted on a semiconductor device for controlling a voltage supplied to a DRAM, comprising: a control unit for producing for a predetermined period a reference voltage set to one half of a supply voltage connected thereto with a bias circuit comprising first and second resistors having equal values and first and second transistors; an output unit for outputting to the DRAM a predetermined voltage having a value half of said supply voltage by level shifting said reference voltage produced by said control unit with an output circuit comprising first and second complementary transistors; a timer circuit for generating a driving pulse which becomes an active signal intermittently; and a switching circuit for utilizing said driving pulse from said timer circuit to switch said supply voltage supplied to said control unit, said switching circuit simultaneously suspends said control unit and said output unit when said driving pulse fails to provide said active signal to hold a high impedance and cut said predetermined voltage supplied to the DRAM, and when said output unit supplied said predetermined voltage to the DRAM, said switching circuit intermittently switch said control unit with said driving pulse transmitted from said timer circuit to decrease the power consumed by said control unit, said output unit and the DRAM.
Claim 2
Dependent Claim
214 words
A voltage dropping circuit mounted on a semiconductor device for controlling a voltage supplied to a DRAM, comprising: a control unit for producing for a predetermined period a reference voltage set to one half of a supply voltage connected thereto with a bias circuit comprising first and second resistors having equal values and first and second transistors; an output unit for outputting to the DRAM a predetermined voltage having a value half of said supply voltage by level shifting said reference voltage produced by said control unit with an output circuit comprising first and second complementary transistors; a timer circuit for generating a driving pulse which becomes an active signal intermittently; and a switching circuit for utilizing said driving pulse from said timer circuit to switch said supply voltage supplied to said control unit, said switching circuit simultaneously suspends said control unit and said output unit when said driving pulse fails to provide said active signal to hold a high impedance and cut said predetermined voltage supplied to the DRAM, and when said output unit supplied said predetermined voltage to the DRAM, said switching circuit intermittently switch said control unit with said driving pulse transmitted from said timer circuit to decrease the power consumed by said control unit, said output unit and the DRAM.
Claim 3
Dependent Claim
137 words
A voltage dropping circuit mounted on a semiconductor device according to claim 1, wherein said switching circuit comprises first and second switching transistors from switching said supply voltage to said supply voltage supplied to said control unit and a gate circuit for validating said driving pulse from said timer circuit when the DRAM is inactive; said switching circuit in connected in such a manner that said supply voltage is supplied to said control unit when said active signal provided by said driving pulse is transmitted to said gate circuit; and said switching circuit holds both said control count and said output unit in a high impedance by separating said supply voltage from said control unit to cut off power consumption when said active signal provided by said driving pulse fails to be transmitted to said gate circuit.
Claim 4
Dependent Claim
39 words
A voltage dropping circuit for a semiconductor device according to claim 1, wherein said timer circuit comprises an oscillator for generating said driving pulse having a fixed duration at fixed time intervals, a flip-flop circuit and a gate circuit.
Claim 5
Dependent Claim
28 words
A voltage dropping circuit for a semiconductor device according to claim 1, wherein said switching circuit comprises a switching element having an n-channel FET and a p-channel FET.
Claim 6
Dependent Claim
36 words
A voltage dropping circuit for a semiconductor device according to claim 1, wherein said timer circuit comprises a pulse generator composed of a ring oscillator and a frequency dividing circuit composed of a toggle-type flip-flop circuit.
Claim 7
Independent Claim
95 words
A method of voltage dropping for a semiconductor device, comprising the steps of: (a) producing a reference voltage from a first specified voltage by a control unit; (b) generating for a predetermined period a second specified voltage which is a half of said first specified voltage on the basis of said reference voltage; (c) generating a driving pulse which becomes active intermittently; (d) operating said control unit to produce said reference voltage when said driving pulse is active; and (e) stopping the operation of said control unit when said driving pulse fails to be active.
Claim 8
Independent Claim
95 words
A method of voltage dropping for a semiconductor device, comprising the steps of: (a) producing a reference voltage from a first specified voltage by a control unit; (b) generating for a predetermined period a second specified voltage which is a half of said first specified voltage on the basis of said reference voltage; (c) generating a driving pulse which becomes active intermittently; (d) operating said control unit to produce said reference voltage when said driving pulse is active; and (e) stopping the operation of said control unit when said driving pulse fails to be active.
Claim 9
Dependent Claim
53 words
A method of voltage dropping according to claim 6, wherein said step (d) connects said control unit to said first specified voltage by a switching element when said driving pulse is active and said step (e) disconnects said control unit from said first specified voltage when said driving pulse fails to be active.
Claim 10
Dependent Claim
28 words
A method of voltage dropping according to claim 6, wherein said step (c) generates said driving pulse having a fixed duration at fixed time intervals by an oscillator.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-07-11 | 1998-01-10 | 1998-07-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-07-11 | 2002-01-10 | 2002-07-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-07-11 | 2006-01-10 | 2006-07-12 | $7700.00 | Window Closed / Lapsed |