Semiconductor diode

Claim 2

An article comprising a GaAs-based semiconductor diode comprising: a) a first and a second planar semiconductor region, with each of the first and second regions comprising n-doped semiconductor material; b) a p-doped planar third semiconductor region between said first and second regions, said third region being of thickness t; and c) means for electrically contacting said first and second regions such that an electrical bias can be applied between said first and second regions; wherein d) t is selected such that, at room temperature and with zero applied bias, said third semiconductor region is substantially depleted of holes; and wherein the dopant in the third semiconductor region essentially is carbon.

Claim 3

Article according to claim 1, wherein at least one of said first and second regions comprises a substantially undoped semiconductor layer in contact with said third region.

Claim 4

Article according to claim 2, wherein each of said first and second region comprises a substantially undoped semiconductor layer of thickness d 1 and d 2 , respectively, in contact with said third region.

Claim 5

Article according to claim 3, wherein d 1 , d 2 and the dopant concentration in said third region are selected such that associated with the unbiased diode is a potential barrier height of less than 0.25 V.

Claim 6

Article according to claim 1, wherein at least one of said first and second regions comprises a lightly doped semiconductor layer in contact with said third region.

Claim 7

Article according to claim 5, wherein each of said first and second regions comprises a lightly doped semiconductor layer of thickness d 1 and d 2 , respectively, in contact with said third region.

Claim 8

Article according to claim 6, wherein the dopant concentration in each of said two lightly doped semiconductor layers is in the range 0.1-1×10 17 /cm 3 , and wherein d 1 , d 2 and the dopant concentration in said third region are selected such that associated with the unbiased diode is a potential barrier height of less than 0.25 V.

Claim 9

Article according to claim 1, wherein t is in the range 0.3-30 nm, and wherein the dopant concentration in the third region is substantially constant throughout the third region.

Claim 10

Article according to claim 1, wherein at least one of said means for contacting said first and second semiconductor regions comprises material selected from the group consisting of WSi x , (TiW) Si x and Ti/Pt/Au.

Claim 11

Article according to claim 1 wherein A) one of said first and second regions comprises a n + layer; in contact with the third region and the other of the first and second regions comprises, in order of increasing distance from the third region: i) an i layer and a n + layer; or ii) a n layer and a n + layer; B) said one region comprises, in order of increasing distance from the third region, an i layer and a n + layer; and said other region comprises, in order of increasing distance from the third region: i) an i layer and a n + layer; or ii) an i layer, a n layer and a n + layer; C) said one region comprises, in the order of increasing distance from the third region, a n layer and a n + layer; and the other region comprises, in the order of increasing distance from the third region: i) an i layer and a n + layer; ii) a n layer and a n + layer; or iii) an i layer, a n layer and a n + layer; or D) said one region comprises, in order of increasing distance from the third region, an i layer, a n layer and a n + layer; and said other region comprises, in order of increasing distance from the third region, an i layer, a n layer and a n + layer; wherein an "i layer" is a substantially undoped (dopant concentration ≲10 15 /cm 3 ) layer, a "n + layer" or a "p + layer with dopant concentration ≳10 18 /cm 3 , and a "n layer" is a layer with donor concentration between 10 15 and 10 18 /cm 3 .