US5328715A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for making metallized vias in diamond substrates
Assignee: General Electric Co
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Filing: 1993-02-11
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Granted: 1994-07-12
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Expires: 2013-02-11
Abstract
Abstract A process for making metallized vias in diamond substrates is disclosed. The process involves laser-drilling a plurality of holes in a CVD diamond substrate and depositing tungsten, or a similar refractory metal, in the holes by low pressure CVD to provide substantially void-free metallized vias. Diamond substrates having metallized vias are also disclosed. The structures are useful for making multichip modules for high clock rate computers.
Inventors
- 👤 Charles D. Iacovangelo
- 👤 Elihu C. Jerabek
- 👤 Ronald H. Wilson
- 👤 Peter C. Schaefer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 09:50
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/04; C23C16/045; H; H10; H10W; H10W70/00; H10W70/01; H10W70/05; H10W70/095; H10W70/60; H10W70/67; H10W70/69; H05; H05K; H05K1/00; H05K1/02; H05K1/03; H05K1/0306; H05K3/00; H05K3/40; H05K3/4038; H05K3/4076
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
50 words
A process for creating a metallized aperture in a diamond substrate comprising the steps of (a) providing a diamond substrate having one or more apertures, the surface of said diamond within said apertures being substantially free of contaminants; b) filling said apertures by low pressure chemical vapor deposition with tungsten.
Claim 2
Dependent Claim
50 words
A process for creating a metallized aperture in a diamond substrate comprising the steps of (a) providing a diamond substrate having one or more apertures, the surface of said diamond within said apertures being substantially free of contaminants; b) filling said apertures by low pressure chemical vapor deposition with tungsten.
Claim 3
Dependent Claim
19 words
A process according to claim 1 wherein said apertures are vias extending between two surfaces of said diamond substrate.
Claim 4
Dependent Claim
15 words
A process according to claim 2 wherein said tungsten is deposited at about 300°-900° C.
Claim 5
Dependent Claim
33 words
A process according to claim 3 wherein said vias are 100-500 μm long and have an aspect ratio in the range of about 1-20 and wherein said tungsten is deposited at 0.1-3.0 torr.
Claim 6
Dependent Claim
54 words
A process for creating a metallized via in diamond substrate comprising the steps of: (a) providing a diamond substrate 100-500 μm thick having one or more vias, the surface of said diamond within said vias being substantially pure diamond; b) filling said vias with tungsten by low pressure chemical vapor deposition at 450°-750° C.
Claim 7
Dependent Claim
54 words
A process for creating a metallized via in diamond substrate comprising the steps of: (a) providing a diamond substrate 100-500 μm thick having one or more vias, the surface of said diamond within said vias being substantially pure diamond; b) filling said vias with tungsten by low pressure chemical vapor deposition at 450°-750° C.
Claim 8
Dependent Claim
27 words
A process according to claim 5 wherein said low pressure chemical vapor deposition uses a mixture of WF 6 and H 2 as the source of tungsten.
Claim 9
Dependent Claim
16 words
A process according to claim 5 wherein the pressure during chemical vapor deposition is 0.1-3.0 torr.
Claim 10
Dependent Claim
59 words
A process for creating a metallized via in a diamond substrate comprising the steps of: (a) laser etching an aperture extending between two faces of said diamond substrate; (b) removing residual graphite and impurities from the surface of said diamond substrate within said aperture; and (c) depositing tungsten in said aperture by chemical vapor deposition at 450°-650 ° C.
Claim 11
Dependent Claim
59 words
A process for creating a metallized via in a diamond substrate comprising the steps of: (a) laser etching an aperture extending between two faces of said diamond substrate; (b) removing residual graphite and impurities from the surface of said diamond substrate within said aperture; and (c) depositing tungsten in said aperture by chemical vapor deposition at 450°-650 ° C.
Claim 12
Dependent Claim
23 words
A process according to claim 8 wherein said aperture is narrower at a point midway between said two faces than at either face.
Claim 13
Dependent Claim
19 words
A process according to claim 8 wherein said aperture has an aspect ratio in the range of about 1-20.
Claim 14
Dependent Claim
16 words
A process according to claim 8 wherein the pressure during chemical vapor deposition is 0.1-3.0 torr.
References Cited (Backward Citations)
US4741928A
Cited
US5239746A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-07-11 | 1998-01-10 | 1998-07-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-07-11 | 2002-01-10 | 2002-07-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-07-11 | 2006-01-10 | 2006-07-12 | $7700.00 | Window Closed / Lapsed |