US5325412A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Charge-coupled device, image sensor arrangement and camera provided with such an image sensor arrangement
Assignee: Teledyne Dalsa Inc
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Filing: 1993-02-17
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Granted: 1994-06-28
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Expires: 2013-02-17
Abstract
Abstract In CCD's, the major part of the dark current is caused by surface states. This dark current is disturbing, especially in image sensors, because the sensitivity of the camera is limited thereby. When according to the invention the integrating gates are varied periodically, the subjacent surface parts of the - buried - channel being brought periodically into inversion and into depletion, while maintaining the charge-containing capacity, a considerable reduction of the dark current can be obtained. In image sensors, voltage variation preferably occurs during the fly-back time.
Inventors
- 👤 Michael A. W. Stekelenburg
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-06 14:23
CPC Classifications
H; H04; H04N; H04N25/00; H04N25/60; H04N25/63; H04N25/70; H04N25/71; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/153
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
210 words
A method of operating a charge-coupled device of the buried channel type including a semiconductor body having a charge transport channel of a first conductivity type, which is located near a surface of the body, an adjoining layer of a second conductivity type opposite to the first conductivity type, forming a pn junction with the charge transport channel, a substrate of said first conductivity type beneath said adjoining layer, an isolating layer on the surface and a series of successive electrodes on the isolating layer, comprising the steps of applying clock voltages having a blocking level and an active level to the electrodes for inducing at least one of a potential barrier and a potential well in the charge transport channel, the blocking level being chosen such that the conductivity type of the charge transport channel is inverted at the surface of the semiconductor body and the active level being chosen such that the surface of the body is depleted, and, during operation of the device, alternately bringing surface parts of the charge transport channel beneath at least some of the electrodes, and into inversion to reduce dark current, and draining excess charge generated in said charge transport channel due to overexposure by means of vertical anti-blooming to said substrate.
Claim 2
Independent Claim
210 words
A method of operating a charge-coupled device of the buried channel type including a semiconductor body having a charge transport channel of a first conductivity type, which is located near a surface of the body, an adjoining layer of a second conductivity type opposite to the first conductivity type, forming a pn junction with the charge transport channel, a substrate of said first conductivity type beneath said adjoining layer, an isolating layer on the surface and a series of successive electrodes on the isolating layer, comprising the steps of applying clock voltages having a blocking level and an active level to the electrodes for inducing at least one of a potential barrier and a potential well in the charge transport channel, the blocking level being chosen such that the conductivity type of the charge transport channel is inverted at the surface of the semiconductor body and the active level being chosen such that the surface of the body is depleted, and, during operation of the device, alternately bringing surface parts of the charge transport channel beneath at least some of the electrodes, and into inversion to reduce dark current, and draining excess charge generated in said charge transport channel due to overexposure by means of vertical anti-blooming to said substrate.
Claim 3
Dependent Claim
114 words
A method as claimed in claim 1, in which the electrodes comprise at least a group of n+1 successive electrodes with n>3, which together define a charge storage site in the charge transport channel, and in which the step of applying clock voltages further comprises applying the blocking level during a charge storage period in which a charge packet is stored in said storage site to two outer electrodes of said n+1 electrodes and applying alternating voltages varying during the charge storage period between the blocking level and the active level to the electrodes located between said two outer electrodes to alternately bring the surface parts below these electrodes into inversion and into depletion.
Claim 4
Dependent Claim
70 words
A method as claimed in claim 2, in which the charge transport channel with associated channels forms part of an image sensor arrangement having a system of image sensor elements arranged in lines and columns and a system of transport channels which extend in the column direction, comprising the steps of transporting charge packets generated by absorption of radiation in the column direction and reading out the charge packets linewise.
Claim 5
Dependent Claim
60 words
A method system as claimed in claim 3, wherein said step of applying clocking voltages comprises the step of supplying voltages at inner electrodes of said storage site during the period in which a charge packet is stored in said storage site, said voltages being periodically varied during a line fly-back period between the reading out of two successive lines.
Claim 6
Dependent Claim
76 words
A method as claimed in claim 4, wherein said step of supplying voltages comprises the steps of supplying an active voltage to a first number of inner electrodes during the line fly-back period, supplying the active voltage to a second, greater number of inner electrodes during a period between two line fly-back periods, for temporarily reducing the surface area of a potential well formed under the electrodes, and draining excess charge carriers during said temporary reduction.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-06-27 | 1997-12-27 | 1998-06-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-06-27 | 2001-12-27 | 2002-06-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-06-27 | 2005-12-27 | 2006-06-28 | $7700.00 | Window Closed / Lapsed |