Abstract According to this invention, a semiconductor non-volatile memory device includes a semiconductor substrate, insulating films formed on the semiconductor substrate and having at least two types of gate insulating films having different thicknesses and a first conductive film formed on the insulating films and electrically floating from the semiconductor substrate through the insulating films. These at least two types of gate insulating films include a first insulating film formed on said semiconductor substrate and a first diffusion layer of a conductivity type and a second insulating film formed on said semiconductor substrate and a second diffusion layer, of the opposite conductivity type, which is isolated from the first diffusion layer. The first conductive film is formed on the first and second insulating films. A part of the first insulating film between the first conductive film and the first diffusion layer is constituted by a third insulating film having a thickness smaller than that of the first insulating film.
A semiconductor non-volatile memory device comprising: a semiconductor substrate; a first diffusion region in said semiconductor substrate of a conductivity type opposite to that of said semiconductor substrate; a second diffusion region in said semiconductor substrate of a conductivity type opposite to that of said semiconductor substrate, said second region constituting a control gate; a third diffusion region in said semiconductor substrate of a conductivity type opposite to that of said semiconductor substrate such that said third diffusion region is spaced from said first diffusion region by a channel region; and a floating gate spaced from said first diffusion region by a first insulating film portion having a first thickness, from said second diffusion region by a second and from said first diffusion region by a thid insulating film portion having a third thickness which is less than said second thickness.
Claim 2
Dependent Claim
141 words
A semiconductor non-volatile memory device comprising: a semiconductor substrate; a first diffusion region in said semiconductor substrate of a conductivity type opposite to that of said semiconductor substrate; a second diffusion region in said semiconductor substrate of a conductivity type opposite to that of said semiconductor substrate, said second region constituting a control gate; a third diffusion region in said semiconductor substrate of a conductivity type opposite to that of said semiconductor substrate such that said third diffusion region is spaced from said first diffusion region by a channel region; and a floating gate spaced from said first diffusion region by a first insulating film portion having a first thickness, from said second diffusion region by a second and from said first diffusion region by a thid insulating film portion having a third thickness which is less than said second thickness.
Claim 3
Dependent Claim
24 words
The semiconductor non-volatile memory device according to claim 1, wherein said first and second insulating film portions are two different types of insulating film.