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US5324386A
Expired / Lapsed
US
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Method of growing group II-IV mixed compound semiconductor and an apparatus used therefor
Assignee: Fujitsu Ltd
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Filing: 1992-03-12
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Granted: 1994-06-28
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Expires: 2012-03-12
Abstract
Abstract A method of growing a mixed compound semiconductor layer comprises the following steps of: providing a reaction chamber comprising a rotatable substrate stage, a plurality of nozzles aligned in a line, the nozzle being arranged vertical to a substrate surface, and a mechanism for moving the substrate stage at least in the nozzle alignment direction and parallel to the substrate surface; disposing the substrate on the substrate stage which is rotated around its axis; flowing a mixed source gas into the reaction chamber through the nozzles, thereby a flow rate of the most reactive gas in the mixed source gas flowing through each nozzle being controlled to increase depending on a distance between the center axis of the substrate rotation and the nozzle; and heating the substrate. An apparatus for applying the above method comprises a particular feature for moving the substrate stage.
Inventors
- 👤 Satoshi Murakami
- 👤 Yoichiro Sakachi
- 👤 Hironori Nishino
- 👤 Tetsuo Saito
- 👤 Kenji Maruyama
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 03:00
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/455; C23C16/45561; C30; C30B; C30B25/00; C30B25/02; C30B25/14; C30B29/00; C30B29/10; C30B29/46; C30B29/48
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
198 words
A method for growing a mixed compound semiconductor layer on a surface of a substrate, the semiconductor layer comprising a least three elements, said method comprising the steps of: providing a reaction chamber having a substrate stage; mounting a substrate on the substrate stage; supplying a mixture of at least three source gases into the reaction chamber through a single or a plurality of nozzles, one of the source gases being the most reactive source gas, the nozzles directing the source gases perpendicular to the surface of the substrate, the nozzles being aligned in an X-direction; rotating the substrate stage around a center axis of the substrate stage, parallel to the alignment of the nozzles; moving the substrate stage back and forth in the positive and negative X-direction; controlling the flow rate of the most reactive source gas with respect to the other source gases individually, for each of the nozzles, the flow rate of the most reactive source gas being increased as the distance between the center axis of the substrate stage and the nozzle increases and decreased as the distance between the center axis of the substrate stage and the nozzle decreases; and heating the substrate.
Claim 2
Independent Claim
198 words
A method for growing a mixed compound semiconductor layer on a surface of a substrate, the semiconductor layer comprising a least three elements, said method comprising the steps of: providing a reaction chamber having a substrate stage; mounting a substrate on the substrate stage; supplying a mixture of at least three source gases into the reaction chamber through a single or a plurality of nozzles, one of the source gases being the most reactive source gas, the nozzles directing the source gases perpendicular to the surface of the substrate, the nozzles being aligned in an X-direction; rotating the substrate stage around a center axis of the substrate stage, parallel to the alignment of the nozzles; moving the substrate stage back and forth in the positive and negative X-direction; controlling the flow rate of the most reactive source gas with respect to the other source gases individually, for each of the nozzles, the flow rate of the most reactive source gas being increased as the distance between the center axis of the substrate stage and the nozzle increases and decreased as the distance between the center axis of the substrate stage and the nozzle decreases; and heating the substrate.
Claim 3
Dependent Claim
31 words
A method of growing a mixed compound semiconductor as recited in claim 1, wherein the flow rates of all source gases except said most reactive source gas are kept substantially constant.
Claim 4
Dependent Claim
33 words
A method of growing a mixed compound semiconductor as recited in claim 1, wherein said movement of the substrate stage back and forth in the positive and negative X-direction comprises stepwise periodical movements.
Claim 5
Dependent Claim
34 words
A method of growing a mixed compound semiconductor as recited in claim 3, wherein the maximum distance of said movement toward positive and negative X-directions is about a half pitch of said nozzle alignment.
Claim 6
Dependent Claim
37 words
A method of growing a mixed compound semiconductor as recited in claim 2, wherein the center axis of said substrate stage is off center by a displacement distance from the symmetrical center line of the nozzle alignment.
Claim 7
Dependent Claim
28 words
A method of growing a mixed compound semiconductor as recited in claim 5, wherein said displacement distance is about one fourth of a pitch of said nozzle alignment.
Claim 8
Dependent Claim
59 words
A method of growing a mixed compound semiconductor as recited in claim 1, wherein said mixed compound semiconductor is a II-VI group ternary compound semiconductor, and said source gases comprise three source gases, two source gases comprising a different element selected from among group II elements, and one source gas comprising one element selected from among group VI elements.
Claim 9
Dependent Claim
48 words
A method for growing a mixed compound semiconductor layer as recited in claim 3, wherein said mixed compound semiconductor is of Hg 1-x Cd x Te, and said source gases comprise mercury and dimethylcadmium and diisopropyltelluride respectively, and the dimethylcadmium source gas is said most reactive source gas.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-06-27 | 1997-12-27 | 1998-06-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-06-27 | 2001-12-27 | 2002-06-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-06-27 | 2005-12-27 | 2006-06-28 | $7700.00 | Window Closed / Lapsed |