US5322589A
Expired / Lapsed
US
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Process and apparatus for recrystallization of semiconductor layer
Assignee: Fujitsu Ltd
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Filing: 1993-04-21
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Granted: 1994-06-21
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Expires: 2013-04-21
Abstract
Abstract A process for recrystallizing a semiconductor layer including the steps of forming a polycrystalline or amorphous semiconductor layer on a substrate and scanning energy beam on the semiconductor layer, wherein the energy beam is vibrated substantially in parallel to the direction of advance of the scanning of the energy beam. For carrying out the process, the apparatus includes a sample stage for holding a sample having a polycrystalline or amorphous semiconductor layer, an energy beam source for generating energy beam, a scanning means for scanning the energy beam on the semiconductor layer, and a beam-vibrating means for vibrating the energy beam substantially in parallel to the direction of advance of the scanning of the energy beam.
Inventors
- 👤 Hidesato Matsuoka
- 👤 Kazuo Hashimi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 21:34
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/38; H10P14/3802; H10P14/3808; H10P14/3814; C; C30; C30B; C30B13/00; C30B13/16; C30B13/22; C30B13/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/32; H10P14/3202; H10P14/3238; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3451; H10P14/3452; H10P14/3458; H10P14/3818; H10P14/382; Y; Y10; Y10S; Y10S117/00; Y10S117/903; Y10S117/904; Y10S117/905
Claims Analysis
Total Claims: 13
Claim 1
Independent Claim
114 words
A process for recrystallizing a semiconductor layer, comprising the steps of: forming a polycrystalline semiconductor layer on a substrate; scanning an energy beam on said semiconductor layer in a direction of advance while vibrating said energy beam substantially in parallel with said direction of advance of scanning of said energy beam; wherein said polycrystalline semiconductor layer is composed of silicon; and wherein the power density of said energy beam is at least 10 6 W/cm 2 , said polycrystalline semiconductor has a thickness which is in a range of 1000 Å to 5000 Å, and wherein said energy beam has a vibration frequency which is in a range of 290 Hz to 180 KHz.
Claim 2
Dependent Claim
114 words
A process for recrystallizing a semiconductor layer, comprising the steps of: forming a polycrystalline semiconductor layer on a substrate; scanning an energy beam on said semiconductor layer in a direction of advance while vibrating said energy beam substantially in parallel with said direction of advance of scanning of said energy beam; wherein said polycrystalline semiconductor layer is composed of silicon; and wherein the power density of said energy beam is at least 10 6 W/cm 2 , said polycrystalline semiconductor has a thickness which is in a range of 1000 Å to 5000 Å, and wherein said energy beam has a vibration frequency which is in a range of 290 Hz to 180 KHz.
Claim 3
Dependent Claim
14 words
A process according to claim 1, wherein said energy beam is a laser beam.
Claim 4
Dependent Claim
34 words
A process according to claim 2, wherein the amplitude of the vibrations of said laser beam is within a range of ±(20 to 50) μm relative to a central position of said laser beam.
Claim 5
Dependent Claim
14 words
A process according to claim 1, wherein said energy beam is an electron beam.
Claim 6
Dependent Claim
15 words
A process according to claim 1, wherein said substrate is formed on an insulating body.
Claim 7
Dependent Claim
17 words
A process according to claim 5, wherein said insulating body is composed of SiO 2 or SiN.
Claim 8
Dependent Claim
13 words
A process according to claim 5, wherein said substrate is composed of Si.
Claim 9
Dependent Claim
35 words
A process according to claim 1, wherein upon cooling of said polycrystalline semiconductor layer a recrystallized semiconductor area is formed, and further comprising the step of forming an electronic device on said recrystallized semiconductor area.
Claim 10
Dependent Claim
171 words
A process for recrystallizing a semiconductor layer, comprising the steps of: forming a polycrystalline semiconductor layer on a substrate; scanning an energy beam on said semiconductor layer in a direction of advance while vibrating said energy beam substantially in parallel with said direction of advance of scanning of said energy beam so as to melt said polycrystalline semiconductor layer, said scanning and vibrating of said energy beam being conducted at a rate such that, upon cooling of said polycrystalline semiconductor layer, peeling of said polycrystalline semiconductor layer away from said substrate is substantially completely prevented without a reduction of treatment efficiency; wherein said polycrystalline semiconductor layer is composed of silicon; and wherein the power density of said energy beam is at least 10 6 W/cm 2 , said polycrystalline semiconductor has a thickness which is in a range of 1000 Å to 5000 Å, said energy beam has a vibration frequency which is in a range of 290 Hz to 180 KHz; and wherein the average defect length ratio is 0.
Claim 11
Dependent Claim
171 words
A process for recrystallizing a semiconductor layer, comprising the steps of: forming a polycrystalline semiconductor layer on a substrate; scanning an energy beam on said semiconductor layer in a direction of advance while vibrating said energy beam substantially in parallel with said direction of advance of scanning of said energy beam so as to melt said polycrystalline semiconductor layer, said scanning and vibrating of said energy beam being conducted at a rate such that, upon cooling of said polycrystalline semiconductor layer, peeling of said polycrystalline semiconductor layer away from said substrate is substantially completely prevented without a reduction of treatment efficiency; wherein said polycrystalline semiconductor layer is composed of silicon; and wherein the power density of said energy beam is at least 10 6 W/cm 2 , said polycrystalline semiconductor has a thickness which is in a range of 1000 Å to 5000 Å, said energy beam has a vibration frequency which is in a range of 290 Hz to 180 KHz; and wherein the average defect length ratio is 0.
Claim 12
Dependent Claim
14 words
A process according to claim 9, wherein said energy beam is a laser beam.
Claim 13
Dependent Claim
34 words
A process according to claim 9, wherein the amplitude of the vibrations of said laser beam is within a range of ±(20 to 50) μm relative to a central position of said laser beam.
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