US5321653A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Circuit for generating an internal source voltage
Assignee: Samsung Electronics Co Ltd
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Filing: 1993-03-24
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Granted: 1994-06-14
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Expires: 2013-03-24
Abstract
Abstract A circuit for generating an internal source voltage which is applied to the memory elements of a semiconductor device. The circuit includes a reference voltage generating circuit for generating a reference voltage, a comparator for comparing the internal source voltage with the reference voltage, a driver for driving an external source voltage into the internal source voltage under the control of the comparator, and a low reference voltage generating circuit for generating a control signal to fully turn on the driver when the voltage level of the external source voltage is lower than the voltage level of the reference voltage generating circuit and which prevents the driver from receiving the output signal of the comparator so as to apply the external source voltage to the memory element of the memory device.
Inventors
- 👤 Young-Ho Suh
- 👤 Suk-Bin Kim
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-30 14:06
CPC Classifications
G; G11; G11C; G11C11/00; G11C11/21; G11C11/34; G11C11/40; G11C11/401; G11C11/4063; G11C11/407; G11C5/00; G11C5/14; G11C5/147
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
209 words
A circuit for generating upon receipt of a given external source voltage, an internal source voltage to be applied to memory elements of a semiconductor device, comprising; a first reference voltage generating means for generating a reference voltage; means for comparing said internal source voltage with said reference voltage and for generating an output indicative of the comparison; driving means connected between said external source voltage and said internal source voltage for coupling said external source voltage to said internal source voltage under control of said output of said comparing means; a second reference voltage generating means for generating a control signal when a voltage level of said external source voltage is lower than a voltage level of said reference voltage; means connected between said comparing means and said driving means and responsive to said control signal for turning on said driving means and for preventing said driving means from receiving said output of said comparing means, so that said external source voltage is coupled to said internal source voltage when the voltage level of said external source voltage is lower than the voltage level of said reference voltage, and, wherein the state of said control signal is changed according to the voltage level of said external source voltage.
Claim 2
Dependent Claim
209 words
A circuit for generating upon receipt of a given external source voltage, an internal source voltage to be applied to memory elements of a semiconductor device, comprising; a first reference voltage generating means for generating a reference voltage; means for comparing said internal source voltage with said reference voltage and for generating an output indicative of the comparison; driving means connected between said external source voltage and said internal source voltage for coupling said external source voltage to said internal source voltage under control of said output of said comparing means; a second reference voltage generating means for generating a control signal when a voltage level of said external source voltage is lower than a voltage level of said reference voltage; means connected between said comparing means and said driving means and responsive to said control signal for turning on said driving means and for preventing said driving means from receiving said output of said comparing means, so that said external source voltage is coupled to said internal source voltage when the voltage level of said external source voltage is lower than the voltage level of said reference voltage, and, wherein the state of said control signal is changed according to the voltage level of said external source voltage.
Claim 3
Dependent Claim
23 words
A circuit as defined in claim 1, wherein said second reference voltage generating means comprises at least a voltage comparator and voltage divider.
Claim 4
Dependent Claim
219 words
A circuit for generating upon receipt of a given external source voltage an internal source voltage to be applied to memory elements of a semiconductor device, said circuit comprising; a first reference voltage generating means for generating a reference voltage; means for comparing said internal source voltage with said reference voltage and for generating an output indicative of the comparison; driving means connected between said external source voltage and said internal source voltage for coupling said external source voltage to said internal source voltage under control of said output of said comparing means; a second reference voltage generating means for generating a control signal when a voltage level of said external source voltage is lower than a voltage level of said reference voltage; means connected between said comparing means and driving means and responsive to said output of said comparing means for turning on said driving means; and means connected between said second reference voltage generating means and said driving means and responsive to said control signal for turning on said driving means and for preventing said driving means from receiving said output of said comparing means, so that said external source voltage is coupled to said internal source voltage when the voltage level of said external source voltage is lower than the voltage level of said reference voltage.
Claim 5
Dependent Claim
219 words
A circuit for generating upon receipt of a given external source voltage an internal source voltage to be applied to memory elements of a semiconductor device, said circuit comprising; a first reference voltage generating means for generating a reference voltage; means for comparing said internal source voltage with said reference voltage and for generating an output indicative of the comparison; driving means connected between said external source voltage and said internal source voltage for coupling said external source voltage to said internal source voltage under control of said output of said comparing means; a second reference voltage generating means for generating a control signal when a voltage level of said external source voltage is lower than a voltage level of said reference voltage; means connected between said comparing means and driving means and responsive to said output of said comparing means for turning on said driving means; and means connected between said second reference voltage generating means and said driving means and responsive to said control signal for turning on said driving means and for preventing said driving means from receiving said output of said comparing means, so that said external source voltage is coupled to said internal source voltage when the voltage level of said external source voltage is lower than the voltage level of said reference voltage.
Claim 6
Dependent Claim
26 words
A circuit as defined in claim 3, wherein the state of said control signal is changed according to the voltage level of said external source voltage.
Claim 7
Dependent Claim
23 words
A circuit as defined in claim 4, wherein said second reference voltage generating means comprises at least a voltage comparator and voltage divider.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-06-13 | 1997-12-13 | 1998-06-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-06-13 | 2001-12-13 | 2002-06-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-06-13 | 2005-12-13 | 2006-06-14 | $7700.00 | Window Closed / Lapsed |