Patent US5320932A successfully refreshed from Google Patents.
US5320932A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming contact holes
Assignee: Toshiba Corp
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Filing: 1991-05-07
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Granted: 1994-06-14
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Expires: 2011-05-07
Abstract
Abstract In a method of forming contact holes in an interstage insulation layer having a thick portion on the semiconductor substrate in which a first contact hole leading to the substrate surface is to be formed and a thin portion on an electrode in which a second contact hole leading to the electrode is to be formed, a positive-type resist layer is formed on the interstage insulation layer. Then first and second portions of the resist layer which are aligned with the first and second contact holes to be formed are exposed to light, and thereafter the resist layer is heated, thereby making the exposed first and second portions insoluble in a developer. Thereafter, the first portion of the resist layer is exposed to light and then subjected to a developing treatment to form an opening in the first portion of the resist layer. Using the resultant resist layer as a mask, the interstage insulation layer is subjected to an etching process to etch the first portion (thick portion) thereof by a predetermined thickness so as to have substantially the same thickness as that of the second portion (thin portion) of the same. Thereafter, the second portions of the resist layer are exposed to light and then subjected to a developing treatment to form openings in the second portion of the resist layer.
Inventors
- 👤 Hiroshi Haraguchi
- 👤 Hitoshi Tsuji
- 👤 Yasuhisa Yoshida
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 15:56
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/081; G; G03; G03F; G03F7/00; G03F7/20; G03F7/2022
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
413 words
A method of forming contact holes comprising the steps of: forming an element separating insulation layer of a predetermined pattern on a surface region of a semiconductor substrate of a first conductivity type to define an element-forming region in the semiconductor substrate; forming an oxide layer on said element-forming region; forming an electrode on said oxide layer; forming an interstage insulation layer having a flat surface over the resultant semiconductor structure, the interstage insulation layer having a flat surface so that a portion of the interstage insulation layer which is on said semiconductor substrate is thicker than a portion of the interstage insulation layer which is on said electrode, the interstage insulation layer having a first portion in which a first contact hole leading to said semiconductor substrate is formed at a later step and a second portion in which a second contact hole leading to said electrode is formed at a later step; forming a positive type photoresist layer over said interstage insulation layer, said positive type photoresist layer having a first portion corresponding to said first portion of said interstage insulation layer and a second portion corresponding to said second portion of said interstage insulation layer; exposing a third portion of said photoresist layer which corresponds to a portion of said interstage insulation layer other than said first and second portions of said interstage insulation layer to light rays; heating said photoresist layer to make said third portion of said photoresist layer insoluble to a developer; exposing said first portion of said photoresist layer to light rays to make said first portion of said photoresist layer soluble; subjecting said photoresist layer to a developer to dissolve said first portion of said photoresist layer to form a first opening; etching said first portion of said interstage insulation layer to a predetermined thickness using the resultant photoresist layer as a mask, said predetermined thickness of the resultant first portion of the interstage insulation layer being substantially equal to a thickness of said second portion of the interstage insulation layer; exposing said photoresist layer to light rays to make said second portion of the photoresist layer soluble; subjecting said photoresist layer to a developer to dissolve said second portion of said photoresist layer to form a second opening; and simultaneously etching said resultant first portion and second portion of said interstage insulation layer using the resultant photoresist layer as a mask to form said first and second contact holes in said interstage insulation layer.
Claim 2
Independent Claim
413 words
A method of forming contact holes comprising the steps of: forming an element separating insulation layer of a predetermined pattern on a surface region of a semiconductor substrate of a first conductivity type to define an element-forming region in the semiconductor substrate; forming an oxide layer on said element-forming region; forming an electrode on said oxide layer; forming an interstage insulation layer having a flat surface over the resultant semiconductor structure, the interstage insulation layer having a flat surface so that a portion of the interstage insulation layer which is on said semiconductor substrate is thicker than a portion of the interstage insulation layer which is on said electrode, the interstage insulation layer having a first portion in which a first contact hole leading to said semiconductor substrate is formed at a later step and a second portion in which a second contact hole leading to said electrode is formed at a later step; forming a positive type photoresist layer over said interstage insulation layer, said positive type photoresist layer having a first portion corresponding to said first portion of said interstage insulation layer and a second portion corresponding to said second portion of said interstage insulation layer; exposing a third portion of said photoresist layer which corresponds to a portion of said interstage insulation layer other than said first and second portions of said interstage insulation layer to light rays; heating said photoresist layer to make said third portion of said photoresist layer insoluble to a developer; exposing said first portion of said photoresist layer to light rays to make said first portion of said photoresist layer soluble; subjecting said photoresist layer to a developer to dissolve said first portion of said photoresist layer to form a first opening; etching said first portion of said interstage insulation layer to a predetermined thickness using the resultant photoresist layer as a mask, said predetermined thickness of the resultant first portion of the interstage insulation layer being substantially equal to a thickness of said second portion of the interstage insulation layer; exposing said photoresist layer to light rays to make said second portion of the photoresist layer soluble; subjecting said photoresist layer to a developer to dissolve said second portion of said photoresist layer to form a second opening; and simultaneously etching said resultant first portion and second portion of said interstage insulation layer using the resultant photoresist layer as a mask to form said first and second contact holes in said interstage insulation layer.
Claim 3
Dependent Claim
22 words
A method of forming contact holes according to claim 1, wherein said simultaneously etching step is performed by a reactive ion etching.
Claim 4
Dependent Claim
21 words
A method of forming contact holes according to claim 1, wherein said simultaneously etching step is performed by a wet etching.
Claim 5
Dependent Claim
19 words
A method of forming contact holes according to claim 1, wherein said heating step is performed in ammonia atmosphere.
Claim 6
Dependent Claim
23 words
A method of forming contact holes according to claim 1, wherein said first recited subjecting step is performed using choline as said developer.
Claim 7
Dependent Claim
25 words
A method of forming contact holes according to claim 1, wherein said second recited subjecting step is performed using an alkali solution as said developer.
Claim 8
Independent Claim
416 words
A method of forming contact holes comprising the steps of: forming an element separating insulation layer of a predetermined pattern on a surface region of a semiconductor substrate of a first conductivity type to define an element-forming region in the semiconductor substrate; forming an oxide layer on said element-forming region; forming an electrode on said oxide layer; forming an interstage insulation layer having a flat surface over the resultant semiconductor structure, the interstage insulation layer having a flat surface so that a portion of the interstage insulation layer which is on said semiconductor substrate is thicker than a portion of the interstage insulation layer which is on said electrode, the interstage insulation layer having a first portion in which a first contact hole leading to said semiconductor substrate is formed at a later step and a second portion in which a second contact hole leading to said electrode is formed at a later step; forming a positive type photoresist layer over said interstage insulation layer, said positive type photoresist layer having a first portion corresponding to said first portion of said interstage insulation layer and a second portion corresponding to said second portion of said interstage insulation layer; exposing a third portion of said photoresist layer which corresponds to a portion of said interstage insulation layer other than said first and second portions of said interstage insulation layer to ultraviolet light rays; heating said photoresist layer to make said third portion of said photoresist layer insoluble to a developer; exposing said first portion of said photoresist layer to ultraviolet light rays to make said first portion of said photoresist layer soluble; subjecting said photoresist layer to a developer to dissolve said first portion of said photoresist layer to form a first opening; etching said first portion of said interstage insulation layer to a predetermined thickness using the resultant photoresist layer as a mask, said predetermined thickness of the resultant first portion of the interstage insulation layer being substantially equal to a thickness of said second portion of the interstage insulation layer; exposing said photoresist layer to ultraviolet light rays to make said second portion of the photoresist layer soluble; subjecting said photoresist layer to a developer to dissolve said second portion of said photoresist layer to form a second opening; and simultaneously etching said resultant first portion and second portion of said interstage insulation layer using the resultant photoresist layer as a mask to form said first and second contact holes in said interstage insulation layer.
Claim 9
Independent Claim
416 words
A method of forming contact holes comprising the steps of: forming an element separating insulation layer of a predetermined pattern on a surface region of a semiconductor substrate of a first conductivity type to define an element-forming region in the semiconductor substrate; forming an oxide layer on said element-forming region; forming an electrode on said oxide layer; forming an interstage insulation layer having a flat surface over the resultant semiconductor structure, the interstage insulation layer having a flat surface so that a portion of the interstage insulation layer which is on said semiconductor substrate is thicker than a portion of the interstage insulation layer which is on said electrode, the interstage insulation layer having a first portion in which a first contact hole leading to said semiconductor substrate is formed at a later step and a second portion in which a second contact hole leading to said electrode is formed at a later step; forming a positive type photoresist layer over said interstage insulation layer, said positive type photoresist layer having a first portion corresponding to said first portion of said interstage insulation layer and a second portion corresponding to said second portion of said interstage insulation layer; exposing a third portion of said photoresist layer which corresponds to a portion of said interstage insulation layer other than said first and second portions of said interstage insulation layer to ultraviolet light rays; heating said photoresist layer to make said third portion of said photoresist layer insoluble to a developer; exposing said first portion of said photoresist layer to ultraviolet light rays to make said first portion of said photoresist layer soluble; subjecting said photoresist layer to a developer to dissolve said first portion of said photoresist layer to form a first opening; etching said first portion of said interstage insulation layer to a predetermined thickness using the resultant photoresist layer as a mask, said predetermined thickness of the resultant first portion of the interstage insulation layer being substantially equal to a thickness of said second portion of the interstage insulation layer; exposing said photoresist layer to ultraviolet light rays to make said second portion of the photoresist layer soluble; subjecting said photoresist layer to a developer to dissolve said second portion of said photoresist layer to form a second opening; and simultaneously etching said resultant first portion and second portion of said interstage insulation layer using the resultant photoresist layer as a mask to form said first and second contact holes in said interstage insulation layer.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-06-13 | 1997-12-13 | 1998-06-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-06-13 | 2001-12-13 | 2002-06-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-06-13 | 2005-12-13 | 2006-06-14 | $7700.00 | Window Closed / Lapsed |