Patent US5320706A successfully refreshed from Google Patents.
US5320706A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Removing slurry residue from semiconductor wafer planarization
Assignee: Texas Instruments Inc
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Filing: 1991-10-15
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Granted: 1994-06-14
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Expires: 2011-10-15
Abstract
Abstract Polish slurry particles remaining on a semiconductor wafer after mechanical planarization are removed from the semiconductor wafer by polishing the wafer with a polishing pad while a mixture of deionized water and a surfactant is applied to the wafer and the pad.
Inventors
- 👤 Robert E. Blackwell
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 16:07
CPC Classifications
H; H10; H10P; H10P70/00; H10P70/20; H10P70/10; H10P52/00; H10P95/00; Y; Y10; Y10S; Y10S134/00; Y10S134/902
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
87 words
A method for removing slurry polish particle residue after mechanical planarization of a semiconductor wafer with a slurry comprising the steps of: rotating the wafer, on an oscillating carrier assembly, against a rotating polishing pad; applying a rinse to remove the slurry from the wafer; to completely remove the remaining slurry particles; apply a rinse of deionized water containing a surfactant to the polishing pad; and polishing the planarized surface of the semiconductor wafer with the pad and deionized water/surfactant mixture rinse to remove remaining slurry particles.
Claim 2
Independent Claim
87 words
A method for removing slurry polish particle residue after mechanical planarization of a semiconductor wafer with a slurry comprising the steps of: rotating the wafer, on an oscillating carrier assembly, against a rotating polishing pad; applying a rinse to remove the slurry from the wafer; to completely remove the remaining slurry particles; apply a rinse of deionized water containing a surfactant to the polishing pad; and polishing the planarized surface of the semiconductor wafer with the pad and deionized water/surfactant mixture rinse to remove remaining slurry particles.
Claim 3
Dependent Claim
21 words
The method according to claim 1, applying the deionized water/surfactant mixture at a rate between 100 and 400 ml per minute.
Claim 4
Dependent Claim
17 words
The method according to claim 1, including the step of rotating the polishing pad on a platen.
Claim 5
Dependent Claim
15 words
The method according to claim 3, wherein the platen is rotated at approximately 80 rpm.
Claim 6
Dependent Claim
28 words
The method according to claim 1, including the step of: holding the polishing pad against the semiconductor wafer during polishing with a downward force of approximately 6 psi.
Claim 7
Independent Claim
111 words
A method for removing slurry polish particles residue after mechanical planarization of a semiconductor wafer with a slurry comprising the steps of: rotating the wafer, on an oscillating carrier assembly, against a rotating polishing pad; applying a rinse to remove the slurry from the wafer; to completely remove the remaining slurry particles apply a rinse of deionized water containing a surfactant, including a mixture of polyoxyalkylene alkylphenyl ether and water, to a polishing pad; and polishing the planarized surface of the semiconductor wafer by applying a downward force on the polishing pad as the deionized water/surfactant mixture is applied to the semiconductor wafer, and polishing pad to remove remaining slurry particles.
Claim 8
Independent Claim
111 words
A method for removing slurry polish particles residue after mechanical planarization of a semiconductor wafer with a slurry comprising the steps of: rotating the wafer, on an oscillating carrier assembly, against a rotating polishing pad; applying a rinse to remove the slurry from the wafer; to completely remove the remaining slurry particles apply a rinse of deionized water containing a surfactant, including a mixture of polyoxyalkylene alkylphenyl ether and water, to a polishing pad; and polishing the planarized surface of the semiconductor wafer by applying a downward force on the polishing pad as the deionized water/surfactant mixture is applied to the semiconductor wafer, and polishing pad to remove remaining slurry particles.
Claim 9
Dependent Claim
21 words
The method according to claim 6, applying the deionized water/surfactant mixture at a rate between 100 and 400 ml per minute.
Claim 10
Dependent Claim
17 words
The method according to claim 6, including the step of rotating the carrier assembly on a platen.
Claim 11
Dependent Claim
15 words
The method according to claim 8, wherein the platen is rotated at approximately 80 rpm.
Claim 12
Dependent Claim
28 words
The method according to claim 6, including the step of: holding the polishing pad against the semiconductor wafer during polishing with a downward force of approximately 6 psi.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-06-13 | 1997-12-13 | 1998-06-14 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-06-13 | 2001-12-13 | 2002-06-14 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-06-13 | 2005-12-13 | 2006-06-14 | $7700.00 | Window Closed / Lapsed |