Semiconductor unit

Claim 2

A semiconductor unit comprising: a first address extending circuit for delaying a non-inverted address signal of one of a plurality of addresses used in designating an information storage address, and for outputting a non-inverted delay address signal; a second address extending circuit for delaying an inverter address signal of said address and for outputting an inverted delay address signal; and a signal generating circuit for outputting an address transition detection signal indicating a change of an address value, said signal generating circuit including a first switch group for outputting a first logical level by being turned on when said non-inverted address signal and said inverted delay address signal are active; and a second switch group for outputting said first logical level by being turned on when said inverted address signal and said non-inverted delay address signal are active.

Claim 3

The semiconductor unit according to claim 1, wherein said signal generating circuit further includes a third switch group for outputting a second logical level by being turned on when said non-inverted address signal and said non-inverted delay address signal are inactive, and a fourth switch group for outputting said second logical level by being turned on when said inverted address signal and said inverted delay address signal are inactive.

Claim 4

The semiconductor unit according to claim 2, wherein each of said first and second address extending circuits comprises: multiple-step complementary transistor circuit having a p-channel type field effect transistor and an n-channel type field effect transistor; a capacitor connected to an output part of said complementary transistor circuit; and a resistor serially connected between said p-channel type field effect transistor and said n-channel type field effect transistor, wherein said resistor restricts electric current of either said p-channel type field effect transistor or said n-channel type field effect transistor to give different time constants for rise and fall points during turn on and during turn off respectively.

Claim 5

The semiconductor unit according to claim 3, wherein each of said capacitors forming said first address extending circuit and said second address extending circuit are connected to an output of said p-channel type field effect transistor in said respective complementary transistor circuit.

Claim 6

The semiconductor unit according to claim 3, wherein each of said capacitors forming said first address extending circuit and said second address extending circuit is connected to an output of said n-channel type field effect transistor in said respective complementary transistor circuit.

Claim 7

The semiconductor unit according to claim 3, wherein each of said first and second address extending circuits comprises two steps of complementary transistor circuits having an inversion logic, and said capacitor in each of said first and second address extending circuits is connected to an output part of said p-channel type field effect transistor forming said complementary transistor circuit in a first step, and to an output part of said n-channel type field effect transistor forming said complementary transistor circuit in a second step.

Claim 8

The semiconductor unit according to claim 3, wherein each of said first and second address extending circuits comprises two steps of complementary transistor circuits having an inversion logic, and said capacitor in each of said first and second address extending circuits is connected to an output part of said n-channel type field effect transistor forming said complementary transistor circuit in a first step, and to an output part of said p-channel type field effect transistor forming said complementary transistor circuit in a second step.

Claim 9

A semiconductor unit comprising: storage means for storing information; column selecting means for selecting a signal line in a column direction of said storage means; information outputting means for controlling write/read of said information; row selecting means for selecting a signal line in a row direction of said storage means; address input/output means for supplying said column selecting means and row selecting means with an address; first address extending circuit including more than one step complementary transistor circuit having a p-channel type field effect transistor and an n-channel type field effect transistor, a capacitor connected to an output part of said complementary transistor circuit, a resistor serially connected between said p-channel type field effect transistor and said n-channel type field effect transistor, wherein said resistor restricts electric current of either said p-channel type field effect transistor or said n-channel type field effect transistor to give different time constants for rise and fall points during turn on and during turn off respectively, and a non-inverted address signal of one of a plurality of address used in designating an information storage address is delayed to output a non-inverted delay address signal; a second address extending circuit including more than one step complementary transistor circuit having a p-channel type field effect transistor and an n-channel type field effect transistor, a capacitor connected to an output part of said complementary transistor circuit, and a resistor serially connected between said p-channel type field effect transistor and said n-channel type field effect transistor, wherein said resistor restricts electric current of either said p-channel type field effect transistor or said n-channel type field effect transistor to give different time constants for rise and fall points during turn on and during turn off respectively, and an inverted address signal of said plurality of addresses is delayed to output an inverted delay address signal; an address transistor detecting circuit for outputting an address transistor detection signal indicating a change of an address value, said address transition detecting circuit including a first switch group for outputting a first logical level by being turned on when said non-inverted address signal and said inverted delay address signal are active, and a second switch group for outputting said first logical level by being turned on when said inverted address signal and said non-inverted delay address signal are active.

Claim 10

A semiconductor unit comprising: storage means for storing information; column selecting means for selecting a signal line in a column direction of said storage means; information outputting means for controlling write/read of said information; row selecting means for selecting a signal line in a row direction of said storage means; address input/output means for supplying said column selecting means and row selecting means with an address; first address extending circuit including more than one step complementary transistor circuit having a p-channel type field effect transistor and an n-channel type field effect transistor, a capacitor connected to an output part of said complementary transistor circuit, a resistor serially connected between said p-channel type field effect transistor and said n-channel type field effect transistor, wherein said resistor restricts electric current of either said p-channel type field effect transistor or said n-channel type field effect transistor to give different time constants for rise and fall points during turn on and during turn off respectively, and a non-inverted address signal of one of a plurality of address used in designating an information storage address is delayed to output a non-inverted delay address signal; a second address extending circuit including more than one step complementary transistor circuit having a p-channel type field effect transistor and an n-channel type field effect transistor, a capacitor connected to an output part of said complementary transistor circuit, and a resistor serially connected between said p-channel type field effect transistor and said n-channel type field effect transistor, wherein said resistor restricts electric current of either said p-channel type field effect transistor or said n-channel type field effect transistor to give different time constants for rise and fall points during turn on and during turn off respectively, and an inverted address signal of said plurality of addresses is delayed to output an inverted delay address signal; an address transistor detecting circuit for outputting an address transistor detection signal indicating a change of an address value, said address transition detecting circuit including a first switch group for outputting a first logical level by being turned on when said non-inverted address signal and said inverted delay address signal are active, and a second switch group for outputting said first logical level by being turned on when said inverted address signal and said non-inverted delay address signal are active.

Claim 11

The semiconductor unit according to claim 8, wherein said address transition detecting circuit further comprising: a third switch group for outputting a second logical level by being turned on when said non-inverted address signal and said non-inverted delay address signal are inactive, and a fourth switch group for outputting said second logical level by being turned on when said inverted address signal and said inverted delay address signal are inactive.

Claim 12

A semiconductor unit, comprising: a first address extending circuit including more than one step complementary transistor circuit having a p-channel type field effect transistor and an n-channel type field effect transistor, a resistor serially connected between said p-channel type field effect transistor and said n-channel type field effect transistor, and a capacitor connected to an output part of said complementary transistor circuit, wherein said resistor restricts electric current of either said p-channel type field effect transistor or said n-channel type field effect transistor to give different time constants for rise and fall at a time of turn on and off respectively, and a non-inverted address signal of one of a plurality of addresses, used in designating an information storage address, is delayed to output a non-inverted delay address signal; a second extending circuit including more than one step complementary transistor circuit having a p-channel type field effect transistor and an n-channel type field effect transistor, a resistor serially connected between said p-channel type field effect transistor and said n-channel type field effect transistor, and a capacitor connected to an output part of said complementary transistor circuit, wherein said resistor restricts electric current of either said p-channel type field effect transistor or said n-channel type field effect transistor to give different time constants for rise and fall points at a time of turn on and off respectively, and an inverted address signal of said plurality of addresses is delayed to output an inverted delay address signal; and a signal generating circuit for outputting an address transition detection signal indicating a change of an address value, said signal generating circuit including a first switch group for outputting a first logical level by being turned on when said non-inverted address signal and said inverted delay address signal are active, and a second switch group for outputting said first logical level by being turned on when said inverted address signal and said non-inverted delay address signal are active.

Claim 13

A semiconductor unit, comprising: a first address extending circuit including more than one step complementary transistor circuit having a p-channel type field effect transistor and an n-channel type field effect transistor, a resistor serially connected between said p-channel type field effect transistor and said n-channel type field effect transistor, and a capacitor connected to an output part of said complementary transistor circuit, wherein said resistor restricts electric current of either said p-channel type field effect transistor or said n-channel type field effect transistor to give different time constants for rise and fall at a time of turn on and off respectively, and a non-inverted address signal of one of a plurality of addresses, used in designating an information storage address, is delayed to output a non-inverted delay address signal; a second extending circuit including more than one step complementary transistor circuit having a p-channel type field effect transistor and an n-channel type field effect transistor, a resistor serially connected between said p-channel type field effect transistor and said n-channel type field effect transistor, and a capacitor connected to an output part of said complementary transistor circuit, wherein said resistor restricts electric current of either said p-channel type field effect transistor or said n-channel type field effect transistor to give different time constants for rise and fall points at a time of turn on and off respectively, and an inverted address signal of said plurality of addresses is delayed to output an inverted delay address signal; and a signal generating circuit for outputting an address transition detection signal indicating a change of an address value, said signal generating circuit including a first switch group for outputting a first logical level by being turned on when said non-inverted address signal and said inverted delay address signal are active, and a second switch group for outputting said first logical level by being turned on when said inverted address signal and said non-inverted delay address signal are active.