Three dimensional integrated device and circuit structures

Claim 2

A semiconductor structure comprising: a substantially planar substrate; and a plurality of epitaxially grown layers of alternating conductivity types on said planar substrate, said layers forming at least two groups of three layers of alternating conductivity types separated by an intermediate layer, each of said groups of layers defining different levels in a perpendicular dimension to said planar substrate in which semiconductor devices may be formed, each said intermediate layer having a substantially higher conductivity than said groups of layers, wherein a plurality of oxide filled trenches extend from a first surface of said structure intersecting said at least two groups of three layers of alternating conductivity types, at least some of said layers being etched back substantially perpendicular to said plurality of oxide filled trenches to form etched back volumes, said etched back volumes being filled with oxide.

Claim 3

The semiconductor structure recited in claim 1 wherein each of said groups of layers comprises a first planar region of a first material and a plurality of second planar regions of a second material interleaved with said first planar region, and wherein said plurality of oxide filled trenches extend from said first surface of said structure intersecting said first and second planar regions, said at least some of said layers comprising at least some of said plurality of second planar regions of said second material being etched back and other etched back volumes filled with oxide, said etched back and filled second planar regions defining gate structures, said semiconductor structure further comprising conductive diffused wiring on opposite edges of at least some of said plurality of first planar regions of said first material disposed between said gate structures, said first planar regions of said first material between said opposite edges defining a channel having a source at one edge and a drain at an opposite edge, and at least one coupling region passing substantially orthogonally through at least some of the planes of said first and second regions, said coupling region including at least one conductor.

Claim 4

The semiconductor structure recited in claim 1 further comprising: first, second and third etch masking layers over said epitaxially grown layers, each of said etch masking layers being selectively removable with respect to its immediately adjacent neighbor.

Claim 5

The semiconductor structure recited in claim 1 further comprising: a oxide layer over an uppermost one of said epitaxially grown layers; a nitride layer over said oxide layer; a silicon layer over said nitride layer; and a second oxide layer over said silicon layer.

Claim 6

The semiconductor structure recited in claim 4 wherein a plurality of trenches orthogonal to said planar surface of said substrate are formed in said epitaxial layers using a common mask formed in said second oxide layer, said epitaxial layers being selectively etched and filled to form semiconductor devices in each of said groups of layers, and said trenches being filled with an oxide.

Claim 7

The semiconductor structure recited in claim 4 wherein a plurality of trenches orthogonal to said planar surface of said substrate are formed in said epitaxial layers using a common mask formed in said second oxide layer, said epitaxial layers being selectively etched and filled to form semiconductor devices in each of said groups of layers, and said trenches being filled with a doped polysilicon.

Claim 8

The semiconductor structure recited in claim 5 wherein a thermal oxide is grown on exposed surfaces within said trenches before being filled.