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Patent US5319223A successfully refreshed from Google Patents.
US5319223A
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High electron mobility transistor
Assignee: Toshiba Corp
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Filing: 1992-07-24
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Granted: 1994-06-07
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Expires: 2012-07-24
Abstract
Abstract A high electron mobility transistor (HEMT) comprises an InGaAs channel layer formed on a semi-insulating InP substrate via a buffer layer, and an n-type InAιAs electron supply layer formed on the channel layer via a spacer layer. On the electron supply layer, formed is an InGaAιP Schottky contact layer, on which a Schottky gate electrode is formed. Source and drain electrodes are formed on the Schottky contact layer via an InGaAs ohmic contact layer, interposing the Schottky gate electrode therebetween. Thus, there is provided an InAιAs/InGaAs HEMT having a high gate breakdown voltage, and exhibiting a small variance of characteristics.
Inventors
- 👤 Shinobu Fujita
- 👤 Takao Noda
- 👤 Yasuo Ashizawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 08:36
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/40; H10D30/47; H10D30/471; H10D30/473; H10D30/4732
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
158 words
A high electron mobility transistor comprising: a main structure portion including a channel layer, a spacer layer, and n-type electron supply layer, said channel layer formed on one side of said spacer layer, and said electron supply layer formed on the other side of said spacer layer; a semi-insulating semiconductor substrate for supporting said main structure portion; a Schottky contact layer formed on said main structure portion; a Schottky gate electrode formed on said Schottky contact layer; first and second ohmic contact layers formed on said Schottky contact layer, interposing said Schottky gate electrode therebetween; a first ohmic electrode formed on said first ohmic contact layer; and a second ohmic electrode formed on said second ohmic contact layer; wherein said electron supply layer has a structure represented by In m Aι n As (where m+n=1, 0<m, 0<n), and said Schottky contact layer has a structure represented by In x Ga y Aι z P (where x+y+z=1, 0≦x≦0.9, 0≦z≦0.5).
Claim 2
Dependent Claim
158 words
A high electron mobility transistor comprising: a main structure portion including a channel layer, a spacer layer, and n-type electron supply layer, said channel layer formed on one side of said spacer layer, and said electron supply layer formed on the other side of said spacer layer; a semi-insulating semiconductor substrate for supporting said main structure portion; a Schottky contact layer formed on said main structure portion; a Schottky gate electrode formed on said Schottky contact layer; first and second ohmic contact layers formed on said Schottky contact layer, interposing said Schottky gate electrode therebetween; a first ohmic electrode formed on said first ohmic contact layer; and a second ohmic electrode formed on said second ohmic contact layer; wherein said electron supply layer has a structure represented by In m Aι n As (where m+n=1, 0<m, 0<n), and said Schottky contact layer has a structure represented by In x Ga y Aι z P (where x+y+z=1, 0≦x≦0.9, 0≦z≦0.5).
Claim 3
Dependent Claim
32 words
A high electron mobility transistor according to claim 1, wherein each said first and second ohmic contact layers have a structure represented by In s Ga t As (where s+t=1, 0≦s, 0≦t).
Claim 4
Dependent Claim
23 words
A high electron mobility transistor according to claim 1, wherein a buffer layer is provided between said substrate and said main structure portion.
Claim 5
Dependent Claim
16 words
A high electron mobility transistor according to claim 1, wherein said substrate is made of InP.
Claim 6
Dependent Claim
32 words
A high electron mobility transistor according to claim 4, wherein a buffer layer made of InP or InAιAs which lattice-matches with InP, is provided between said substrate and said main structure portion.
Claim 7
Dependent Claim
16 words
A high electron mobility transistor according to claim 1, wherein said substrate is made of GaAs.
Claim 8
Dependent Claim
33 words
A high electron mobility transistor according to claim 6, wherein an InGaAs graded buffer layer in which an In content is gradually increased is provided between said substrate and said main structure portion.
Claim 9
Dependent Claim
17 words
A high electron mobility transistor according to claim 1, wherein said spacer layer is made of InAιAs.
Claim 10
Dependent Claim
17 words
A high electron mobility transistor according to claim 1, wherein said channel layer is made of InGaAs.
Claim 11
Dependent Claim
19 words
A high electron mobility transistor according to claim 1, wherein said electron supply layer includes a planar doped layer.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-06-06 | 1997-12-06 | 1998-06-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-06-06 | 2001-12-06 | 2002-06-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-06-06 | 2005-12-06 | 2006-06-07 | $7700.00 | Window Closed / Lapsed |