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Patent US5319219A successfully refreshed from Google Patents.
US5319219A
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Single quantum well II-VI laser diode without cladding
Assignee: 3M Co
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Filing: 1992-05-22
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Granted: 1994-06-07
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Expires: 2012-05-22
Abstract
Abstract A single quantum well II-VI laser diode without semiconductor cladding layers includes a pn junction formed by overlaying light-guiding layers of p-type and n-type ZnSe on an n-type GaAs substrate. A CdSe/ZnSe short-period strained-layer superlattice single quantum well active layer is positioned between the guiding layers. An Au electrode overlays the p-type guiding layer opposite the single quantum well active layer. The guiding layers have thicknesses which enable the substrate and Au electrode to confine the light beam generated by the device within the active layer and the guiding layers.
Inventors
- 👤 Hwa Cheng
- 👤 James M. DePuydt
- 👤 Michael A. Haase
- 👤 Jun Qiu
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 20:10
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/34; H01S5/347; B; B82; B82Y; B82Y20/00; H10; H10H; H10H20/00; H10H20/01; H10H20/011; H10H20/012; H10H20/0125; H01S5/3403; H01S5/342
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
136 words
A II-VI compound semiconductor laser diode for generating a beam of light, including: a single crystal III-V semiconductor substrate of a first conductivity type; a first guiding layer of II-VI semiconductor of the first conductivity type overlaying the substrate; a single quantum well active layer of II-VI semiconductor overlaying the first guiding layer; a second guiding layer of II-VI semiconductor of a second conductivity type overlaying the active layer, the first and second guiding layers forming a pn junction; a first electrode layer overlaying the substrate opposite the first guiding layer; a second electrode layer overlaying the second guiding layer opposite the active layer; and the first and second guiding layers having thicknesses enabling the substrate and second electrode to confine the beam of light within the active layer and the first and second guiding layers.
Claim 2
Dependent Claim
136 words
A II-VI compound semiconductor laser diode for generating a beam of light, including: a single crystal III-V semiconductor substrate of a first conductivity type; a first guiding layer of II-VI semiconductor of the first conductivity type overlaying the substrate; a single quantum well active layer of II-VI semiconductor overlaying the first guiding layer; a second guiding layer of II-VI semiconductor of a second conductivity type overlaying the active layer, the first and second guiding layers forming a pn junction; a first electrode layer overlaying the substrate opposite the first guiding layer; a second electrode layer overlaying the second guiding layer opposite the active layer; and the first and second guiding layers having thicknesses enabling the substrate and second electrode to confine the beam of light within the active layer and the first and second guiding layers.
Claim 3
Dependent Claim
17 words
The laser diode of claim 1 wherein the single quantum well active layer includes a CdZnSe layer.
Claim 4
Dependent Claim
20 words
The laser diode of claim 2 wherein the single quantum well active layer includes a CdSe/ZnSe short-period strained-layer superlattice layer.
Claim 5
Dependent Claim
16 words
The laser diode of claim 2 wherein the first and second guiding layers include ZnSe layers.
Claim 6
Dependent Claim
13 words
The laser diode of claim 4 wherein the substrate includes a GaAs substrate.
Claim 7
Dependent Claim
15 words
The laser diode of claim 4 wherein the second electrode is an Au electrode layer.
Claim 8
Dependent Claim
25 words
The laser diode of claim 4 wherein the combined thickness of the first and second guiding layers is between about 2 μm and 6 μm.
Claim 9
Dependent Claim
54 words
The laser diode of claim 1 wherein: the substrate includes a GaAs substrate; the first and second guiding layers include ZnSe layers having a combined thickness between about 2 μm and 6 μm; the single quantum well active layer includes a CdSe/ZnSe short-period strained-layer superlattice layer; and the second electrode includes a Au electrode.
Claim 10
Dependent Claim
21 words
The laser diode of claim 8 wherein the first and second guiding layers have a combined thickness of about 3.5 μm.
Claim 11
Dependent Claim
48 words
The laser diode of claim 1 and further including: a first ohmic contact layer of the first conductivity type between the substrate and the first guiding layer; and a second ohmic contact layer of the second conductivity type between the second guiding layer and the second electrode layer.
Claim 12
Dependent Claim
29 words
The laser diode of claim 1 wherein the first and second guiding layers include layers having a lattice constant which is matched to the lattice constant of the substrate.
Claim 13
Dependent Claim
32 words
The laser diode of claim 1 wherein the first and second guiding layers include layers of II-VI semiconductor having a lattice constant which is mismatched with the lattice constant of the substrate.
Claim 14
Dependent Claim
169 words
A II-VI compound semiconductor laser diode for generating a beam of light, including: a single crystal GaAs substrate of a first conductivity type; a first ZnSe ohmic contact layer of the first conductivity type overlaying the substrate; a first ZnSe guiding layer of the first conductivity type overlaying the first ohmic contact layer; a CdZnSe single quantum well active layer overlaying the first guiding layer; a second ZnSe guiding layer of a second conductivity type overlaying the quantum well active layer, the first and second guiding layers forming a pn junction; a second ZnSe ohmic contact layer of the second conductivity type overlaying the second guiding layer; a first electrode layer overlaying the substrate opposite the first guiding layer; a second electrode layer overlaying the second ohmic contact layer opposite the second guiding layer; and the first and second guiding layers having thicknesses enabling the substrate and second electrode layer to confine the beam of light within the quantum well active layer and the first and second guiding layers.
Claim 15
Dependent Claim
169 words
A II-VI compound semiconductor laser diode for generating a beam of light, including: a single crystal GaAs substrate of a first conductivity type; a first ZnSe ohmic contact layer of the first conductivity type overlaying the substrate; a first ZnSe guiding layer of the first conductivity type overlaying the first ohmic contact layer; a CdZnSe single quantum well active layer overlaying the first guiding layer; a second ZnSe guiding layer of a second conductivity type overlaying the quantum well active layer, the first and second guiding layers forming a pn junction; a second ZnSe ohmic contact layer of the second conductivity type overlaying the second guiding layer; a first electrode layer overlaying the substrate opposite the first guiding layer; a second electrode layer overlaying the second ohmic contact layer opposite the second guiding layer; and the first and second guiding layers having thicknesses enabling the substrate and second electrode layer to confine the beam of light within the quantum well active layer and the first and second guiding layers.
Claim 16
Dependent Claim
20 words
The laser diode of claim 13 wherein the single quantum well active layer includes a CdSe/ZnSe short-period strained-layer superlattice layer.
Claim 17
Dependent Claim
25 words
The laser diode of claim 14 wherein the combined thickness of the first and second guiding layers is between about 2 μm and 6 μm.
Claim 18
Dependent Claim
15 words
The laser diode of claim 15 wherein the second electrode layer is an Au layer.
Claim 19
Dependent Claim
21 words
The laser diode of claim 16 wherein the first and second guiding layers have a combined thickness of about 3.5 μm.
Claim 20
Dependent Claim
29 words
The laser diode of claim 13 wherein the first and second guiding layers include layers having a lattice constant which is matched to the lattice constant of the substrate.
Claim 21
Dependent Claim
29 words
The laser diode of claim 13 wherein the first and second guiding layers include layers having a lattice constant which is mismatched to the lattice constant of the substrate.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-06-06 | 1997-12-06 | 1998-06-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-06-06 | 2001-12-06 | 2002-06-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-06-06 | 2005-12-06 | 2006-06-07 | $7700.00 | Window Closed / Lapsed |