Patent US5318868A successfully refreshed from Google Patents.
US5318868A
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US
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Photomask and method for manufacturing semiconductor device using photomask
Assignee: Renesas Electronics Corp
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Filing: 1992-05-15
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Granted: 1994-06-07
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Expires: 2012-05-15
Abstract
Abstract A photomask which is suitable for a phase shift method and a method for manufacturing a semiconductor device using the photomask is disclosed. The photomask comprises a transparent area, a translucent area and an opaque are arranged in a particular manner relative to a shifter film. In particular, the different elements are arranged so that the lowering of intensity and the amplitude of a transmitted light in the transparent area caused by an unnecessary peripheral part of a shifter film are smaller than the lowering of the intensity and the amplitude of a transmitted light through a transparent area. This serves to prevent an undesirable influence of the unnecessary peripheral part of so that a shifter film can reading be prevented, and a connected pattern can be formed.
Inventors
- 👤 Norio Hasegawa
- 👤 Fumio Murai
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 20:13
CPC Classifications
G; G03; G03F; G03F1/00; G03F1/26; G03F1/32; G03F7/00; G03F7/70; G03F7/70425; G03F7/70466; G03F7/70475
Claims Analysis
Total Claims: 26
Claim 1
Independent Claim
171 words
A photomask comprising: a transparent substrate having an engraved part; a translucent film having a predetermined shape formed on said substrate over a portion other than said engraved part; an opaque film having a predetermined shape formed in a predetermined area on said translucent film; and a shifter film, having a first peripheral part and a second peripheral part, wherein said shifter film is disposed to cover predetermined parts of the surfaces of said transparent substrate other than said engraved part, said opaque film and said translucent film, wherein a height of a main surface of said engraved part of said transparent substrate is lower than the height of a main surface of the rest of said transparent substrate other than said engraved part, and wherein said first peripheral part of said shifter film is disposed at a predetermined position of said translucent film, and said second peripheral part of said shifter film and a peripheral part of said engraved part of said transparent substrate are substantially in the same position.
Claim 2
Dependent Claim
171 words
A photomask comprising: a transparent substrate having an engraved part; a translucent film having a predetermined shape formed on said substrate over a portion other than said engraved part; an opaque film having a predetermined shape formed in a predetermined area on said translucent film; and a shifter film, having a first peripheral part and a second peripheral part, wherein said shifter film is disposed to cover predetermined parts of the surfaces of said transparent substrate other than said engraved part, said opaque film and said translucent film, wherein a height of a main surface of said engraved part of said transparent substrate is lower than the height of a main surface of the rest of said transparent substrate other than said engraved part, and wherein said first peripheral part of said shifter film is disposed at a predetermined position of said translucent film, and said second peripheral part of said shifter film and a peripheral part of said engraved part of said transparent substrate are substantially in the same position.
Claim 3
Dependent Claim
15 words
A photomask according to claim 1, wherein the shifter film completely covers the opaque film.
Claim 4
Dependent Claim
17 words
A photomask as defined in claim 1 wherein said transparent substrate is composed of glass or quartz.
Claim 5
Dependent Claim
18 words
A photomask as defined in claim 1 wherein said translucent film is composed of Si or a metal.
Claim 6
Dependent Claim
19 words
A photomask as defined in claim 4 wherein the thickness of said Si film is 0.01 to 0.1 μm.
Claim 7
Dependent Claim
29 words
A photomask as defined in claim 1 wherein said opaque film is comprised of an element selected out of a group being composed of Cr, Mo, Ta and W.
Claim 8
Dependent Claim
22 words
A photomask as defined in claim 1 wherein said shifter film is comprised of SiO 2 or Si 3 N 4 .
Claim 9
Dependent Claim
26 words
A photomask described in claim 1 wherein the phase of a transmitted light through a thinner thickness part of said transparent substrate is 90°±30° or -90°±30°.
Claim 10
Dependent Claim
48 words
A photomask as defined in claim 1 wherein the phase difference between the transmitted light through an area where only said translucent film is formed and the transmitted light through an area where said translucent film; and said shifter film are formed being laminated together is approximately 180°.
Claim 11
Dependent Claim
169 words
A photomask comprising: a translucent film having a predetermined shape, an opaque film having a predetermined shape, and a shifter film having a predetermined shape formed on a transparent substrate having an engraved part wherein the intensity and amplitude of a transmitted light through a first peripheral part of said shifter film abutting to said translucent film and the intensity and amplitude of a transmitted light through a second peripheral part of said shifter film abutting to said transparent substrate are different from each other, respectively, wherein a height of a main surface of said engraved part of said transparent substrate is lower than the height of a main surface of the rest of said transparent substrate other than said engraved part, and wherein said first peripheral part of said shifter film is disposed at a predetermined position of said translucent film, and said second peripheral part of said shifter film and a peripheral part of said engraved part of said transparent substrate are substantially in the same position.
Claim 12
Dependent Claim
169 words
A photomask comprising: a translucent film having a predetermined shape, an opaque film having a predetermined shape, and a shifter film having a predetermined shape formed on a transparent substrate having an engraved part wherein the intensity and amplitude of a transmitted light through a first peripheral part of said shifter film abutting to said translucent film and the intensity and amplitude of a transmitted light through a second peripheral part of said shifter film abutting to said transparent substrate are different from each other, respectively, wherein a height of a main surface of said engraved part of said transparent substrate is lower than the height of a main surface of the rest of said transparent substrate other than said engraved part, and wherein said first peripheral part of said shifter film is disposed at a predetermined position of said translucent film, and said second peripheral part of said shifter film and a peripheral part of said engraved part of said transparent substrate are substantially in the same position.
Claim 13
Dependent Claim
15 words
A photomask according to claim 10, wherein the shifter film completely covers the opaque film.
Claim 14
Independent Claim
208 words
A method for manufacturing a semiconductor device comprising the steps of providing an exposure light to a predetermined area of a resist film through a photomask, and forming a predetermined pattern in developing said resist film, wherein said photomask comprises: a transparent substrate having an engraved part; a translucent film having a predetermined shape formed on said substrate over a portion other than said engraved part; an opaque film having a predetermined shape formed in a predetermined area on said translucent film; and a shifter film, having a first peripheral part and a second peripheral part, wherein said shifter film is disposed to cover predetermined parts of the surfaces of said transparent substrate other than said engraved part, said opaque film and said translucent film, wherein a height of a main surface of said engraved part of said transparent substrate is lower than the height of a main surface of the rest of said transparent substrate other than said engraved part, and wherein said first peripheral part of said shifter film is disposed at a predetermined position of said translucent film, and said second peripheral part of said shifter film and a peripheral part of said engraved part of said transparent substrate are substantially in the same position.
Claim 15
Independent Claim
208 words
A method for manufacturing a semiconductor device comprising the steps of providing an exposure light to a predetermined area of a resist film through a photomask, and forming a predetermined pattern in developing said resist film, wherein said photomask comprises: a transparent substrate having an engraved part; a translucent film having a predetermined shape formed on said substrate over a portion other than said engraved part; an opaque film having a predetermined shape formed in a predetermined area on said translucent film; and a shifter film, having a first peripheral part and a second peripheral part, wherein said shifter film is disposed to cover predetermined parts of the surfaces of said transparent substrate other than said engraved part, said opaque film and said translucent film, wherein a height of a main surface of said engraved part of said transparent substrate is lower than the height of a main surface of the rest of said transparent substrate other than said engraved part, and wherein said first peripheral part of said shifter film is disposed at a predetermined position of said translucent film, and said second peripheral part of said shifter film and a peripheral part of said engraved part of said transparent substrate are substantially in the same position.
Claim 16
Dependent Claim
15 words
A photomask according to claim 12, wherein the shifter film completely covers the opaque film.
Claim 17
Dependent Claim
17 words
A method as defined in claim 12 wherein said transparent substrate is comprises of glass or quartz.
Claim 18
Dependent Claim
18 words
A method as defined in claim 12 wherein said translucent film is comprises of Si or a metal.
Claim 19
Dependent Claim
20 words
A method as defined in claim 15 wherein the film thickness of said Si film is 0.01 to 0.1 μm.
Claim 20
Dependent Claim
29 words
A method as defined in claim 12 wherein said opaque film is comprised of an element selected out of a group being comprises of Cr, Mo, Ta and W.
Claim 21
Dependent Claim
22 words
A method, as defined in claim 12 wherein said shifter film is comprised of SiO 2 or Si 3 N 4 .
Claim 22
Dependent Claim
29 words
A method as defined in claim 12 wherein the phase of a transmitted light through a part having a thinner thickness of said transparent substrate is 90°±30° or -90°±30°.
Claim 23
Dependent Claim
48 words
A method as defined in claim 12 wherein the phase difference between a transmitted light through an area where only said translucent film is formed and a transmitted light through an area where said translucent film and said shifter film are laminated to one another is approximately 180°.
Claim 24
Independent Claim
207 words
A method for manufacturing a semiconductor device comprising the steps of: a step for giving an exposure light to a predetermined area on a resist film through a photomask and a step for forming a predetermined pattern in developing said resist film; said photomask comprising: a translucent film having a predetermined shape formed on said transparent substrate having an engraved part, an opaque film having a predetermined shape, and a shifter film having a predetermined shape wherein the intensity and amplitude of a transmitted light through a first peripheral part of said shifter film abutting to said translucent film and the intensity and amplitude through a second peripheral part of said shifter film abutting to said transparent substrate are different from each other, respectively, wherein a height of a main surface of said engraved part of said transparent substrate is lower than the height of a main surface of the rest of said transparent substrate other than said engraved part, and wherein said first peripheral part of said shifter film is disposed at a predetermined position of said translucent film, and said second peripheral part of aid shifter film and a peripheral part of said engraved part of said transparent substrate are substantially in the same position.
Claim 25
Independent Claim
207 words
A method for manufacturing a semiconductor device comprising the steps of: a step for giving an exposure light to a predetermined area on a resist film through a photomask and a step for forming a predetermined pattern in developing said resist film; said photomask comprising: a translucent film having a predetermined shape formed on said transparent substrate having an engraved part, an opaque film having a predetermined shape, and a shifter film having a predetermined shape wherein the intensity and amplitude of a transmitted light through a first peripheral part of said shifter film abutting to said translucent film and the intensity and amplitude through a second peripheral part of said shifter film abutting to said transparent substrate are different from each other, respectively, wherein a height of a main surface of said engraved part of said transparent substrate is lower than the height of a main surface of the rest of said transparent substrate other than said engraved part, and wherein said first peripheral part of said shifter film is disposed at a predetermined position of said translucent film, and said second peripheral part of aid shifter film and a peripheral part of said engraved part of said transparent substrate are substantially in the same position.
Claim 26
Dependent Claim
15 words
A photomask according to claim 21, wherein the shifter film completely covers the opaque film.
References Cited (Backward Citations)
US4904569A
Cited
US5045417A
Cited
USPTO Annuity & Maintenance Windows
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|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-06-06 | 1997-12-06 | 1998-06-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-06-06 | 2001-12-06 | 2002-06-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-06-06 | 2005-12-06 | 2006-06-07 | $7700.00 | Window Closed / Lapsed |