US5317192A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor contact via structure having amorphous silicon side walls
Assignee: STMicroelectronics lnc USA
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Filing: 1992-05-06
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Granted: 1994-05-31
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Expires: 2012-05-06
Abstract
Abstract A method is provided for forming an integrated circuit contact structure. A conductive region is formed on a semiconductor device. Thereafter an insulating layer is formed over the conductive region. An opening is then formed through the insulating region to the conductive region. A thin barrier layer is deposited over the integrated circuit contact structure. A portion of the thin barrier layer is removed by backsputtering the integrated circuit contact structure so that only a thin barrier sidewall remains. Finally, a conductive metal layer is deposited over the integrated circuit contact structure. In one embodiment, the integrated circuit contact structure is baked before the conductive metal layer is deposited.
Inventors
- 👤 Fusen E. Chen
- 👤 Girish A. Dixit
- 👤 Che-Chia Wei
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 21:09
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/42; H10W20/01; H10W20/071; H10W20/074; H10W20/076; H10W20/081; H10W20/082; H10W20/45; H10W20/47; H10W20/48
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
158 words
A contact structure for an integrated circuit, comprising: an underlying conductive structure; a first conformal oxide layer overlying the underlying conductive structure, such first conformal oxide layer being undoped or lightly doped; a planarizing oxide layer overlying the first conformal oxide layer, such planarizing oxide layer having a large amount of impurities; a second conformal oxide layer, such second conformal oxide layer being undoped; an opening through the second conformal oxide layer, the planarizing oxide layer, and the first conformal oxide layer to expose a portion of the underlying conductive structure; thin sidewalls of amorphous silicon alongside sides of the opening, separating the opening from the first and second conformal oxide layers and the planarizing oxide layer; and a conductive interconnect layer lying on the second conformal oxide layer and extending into the opening, and separated from the planarizing oxide layer and the first and second conformal oxide layers in the opening by the thin amorphous silicon sidewalls.
Claim 2
Dependent Claim
158 words
A contact structure for an integrated circuit, comprising: an underlying conductive structure; a first conformal oxide layer overlying the underlying conductive structure, such first conformal oxide layer being undoped or lightly doped; a planarizing oxide layer overlying the first conformal oxide layer, such planarizing oxide layer having a large amount of impurities; a second conformal oxide layer, such second conformal oxide layer being undoped; an opening through the second conformal oxide layer, the planarizing oxide layer, and the first conformal oxide layer to expose a portion of the underlying conductive structure; thin sidewalls of amorphous silicon alongside sides of the opening, separating the opening from the first and second conformal oxide layers and the planarizing oxide layer; and a conductive interconnect layer lying on the second conformal oxide layer and extending into the opening, and separated from the planarizing oxide layer and the first and second conformal oxide layers in the opening by the thin amorphous silicon sidewalls.
Claim 3
Dependent Claim
14 words
The structure of claim 1, wherein the underlying conductive structure comprises an interconnect structure.
Claim 4
Dependent Claim
17 words
The structure of claim 1, wherein the underlying conductive structure comprises a conductive region in a substrate.
Claim 5
Dependent Claim
18 words
The contact structure according to claim 1, wherein the planarizing oxide layer comprises a layer of spin-on glass.
Claim 6
Dependent Claim
18 words
The contact structure according to claim 1, wherein the planarizing oxide layer comprises a layer of reflow glass.
Claim 7
Dependent Claim
16 words
The contact structure according to claim 5, wherein the layer of reflow glass comprises phospo-silicate glass.
Claim 8
Dependent Claim
16 words
The contact structure according to claim 5, wherein the layer of reflow glass comprises boro-phospo-silicate glass.
Claim 9
Dependent Claim
36 words
The contact structure according to claim 4, wherein the layer of spin-on glass comprises regions having a lesser water content, wherein the regions are a result of baking the contact structure after the opening is formed.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-05-30 | 1997-11-29 | 1998-05-31 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-05-30 | 2001-11-29 | 2002-05-31 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-05-30 | 2005-11-29 | 2006-05-31 | $7700.00 | Window Closed / Lapsed |