Method of making a semiconductor device by dry etching process

Claim 1

A method for making a semiconductor device wherein an insulating film, which is composed of a silicon oxide film and an organic spin-on glass film, is formed on a semiconductor substrate having a step part, is thereafter etched back with a dry etching process, and is thereby planarized, wherein, during said dry etching process, the temperature of a lower electrode, on which said semiconductor substrate is supported, is maintained at a value 40° C. to 60° C. lower than the temperatures of an upper electrode, which stands facing said lower electrode, and of an etching chamber, wherein hexafluoroethane gas is used as a reaction gas, and wherein said etching process is carried out under the conditions of reaction gas flow rates and electrode temperatures such that the etching rate of said silicon oxide film is 1.5 to 2.0 times higher than the etching rate of said organic spin-on glass film.

Claim 2

A method for making a semiconductor device wherein an insulating film, which is composed of a silicon oxide film and an organic spin-on glass film, is formed on a semiconductor substrate having a step part, is thereafter etched back with a dry etching process, and is thereby planarized, wherein, during said dry etching process, the temperature of a lower electrode, on which said semiconductor substrate is supported, is maintained at a value 40° C. to 60° C. lower than the temperatures of an upper electrode, which stands facing said lower electrode, and of an etching chamber, wherein hexafluoroethane gas is used as a reaction gas, and wherein said etching process is carried out under the conditions of reaction gas flow rates and electrode temperatures such that the etching rate of said silicon oxide film is 1.5 to 2.0 times higher than the etching rate of said organic spin-on glass film.