Patent US5314538A successfully refreshed from Google Patents.
US5314538A
Expired / Lapsed
US
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Apparatus for manufacturing semiconductor device and method for manufacturing semiconductor device
Assignee: Alcan Tech Co Inc
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Filing: 1992-04-14
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Granted: 1994-05-24
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Expires: 2012-04-14
Abstract
Abstract An apparatus and method for manufacturing a semiconductor device capable of forming a single layer film or a multilayer film of improved quality by continuously processing without exposure of the wafer to the ambient air. The apparatus includes a film forming section having a gas dispersion unit for supplying reaction gas, a processing section for processing the formed film and a wafer holder for holding a wafer facing the gas dispersion unit or the processing section. The wafer holder moves the wafer between the film forming section and the processing section while heating the wafer by a heating element contained therein.
Inventors
- 👤 Kazuo Maeda
- 👤 Noboru Tokumasu
- 👤 Yuhko Nishimoto
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 20:10
CPC Classifications
C; C23; C23C; C23C16/00; C23C16/44; C23C16/48; C23C16/481; C23C16/54; C23C16/56; H; H10; H10P; H10P14/00; H10P14/60; H10P14/65; H10P14/6502; H10P14/6506; H10P14/6516; H10P14/6529; H10P14/6536; H10P14/6538; H10P14/69; H10P14/692; H10P14/6921; H10P14/6922; H10P14/6923; H10P72/00; H10P72/04; H10P72/0402; H10P72/0431; H10P72/0432; H10P72/0451; H10P72/0452; H10P72/0454; H10P72/0468; H10P95/00; H10P95/90; H10W; H10W20/00; H10W20/01; H10W20/071; H10W20/092; H10P14/63; H10P14/6326; H10P14/6328; H10P14/6334; H10P14/6339; Y; Y10; Y10S; Y10S414/00; Y10S414/135; Y10S414/141
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
126 words
An apparatus for manufacturing a semiconductor device comprising: a film forming section having a gas dispersion unit providing a planar gas release surface for contacting a surface of a substrate with a reaction gas to form a film on the substrate; a processing section having processing means for processing the formed film; a wafer holder having a wafer support surface for holding a wafer facing said planar gas release surface or facing said processing means and means for moving said wafer holder between said film forming section and said processing section with the wafer held on said wafer support surface; and heating means, mounted in said wafer holder, for heating the wafer held on said wafer support surface including the period while said wafer is moving.
Claim 2
Independent Claim
126 words
An apparatus for manufacturing a semiconductor device comprising: a film forming section having a gas dispersion unit providing a planar gas release surface for contacting a surface of a substrate with a reaction gas to form a film on the substrate; a processing section having processing means for processing the formed film; a wafer holder having a wafer support surface for holding a wafer facing said planar gas release surface or facing said processing means and means for moving said wafer holder between said film forming section and said processing section with the wafer held on said wafer support surface; and heating means, mounted in said wafer holder, for heating the wafer held on said wafer support surface including the period while said wafer is moving.
Claim 3
Dependent Claim
27 words
The apparatus for manufacturing a semiconductor device according to claim 1, wherein said processing means is infrared radiation means, ultraviolet radiation means or process gas supply means.
Claim 4
Independent Claim
104 words
An apparatus for manufacturing a semiconductor device comprising: a plurality of film forming sections each having a gas dispersion unit providing a planar gas release surface for contacting a surface of a substrate with a reaction gas to form a film on the substrate; a wafer holder having a wafer support surface facing said planar release surface and means for moving said wafer holder among said plurality of film forming sections successively while holding the wafer on said wafer support surface; and heating means, mounted in said wafer holder, for heating the wafer held on the wafer support surface while the wafer is moving.
Claim 5
Independent Claim
104 words
An apparatus for manufacturing a semiconductor device comprising: a plurality of film forming sections each having a gas dispersion unit providing a planar gas release surface for contacting a surface of a substrate with a reaction gas to form a film on the substrate; a wafer holder having a wafer support surface facing said planar release surface and means for moving said wafer holder among said plurality of film forming sections successively while holding the wafer on said wafer support surface; and heating means, mounted in said wafer holder, for heating the wafer held on the wafer support surface while the wafer is moving.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-05-23 | 1997-11-22 | 1998-05-24 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-05-23 | 2001-11-22 | 2002-05-24 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-05-23 | 2005-11-22 | 2006-05-24 | $7700.00 | Window Closed / Lapsed |