Organometallic tellurium compounds useful in chemical vapor deposition processes
Abstract
Abstract Novel tellurium compounds of the present invention have the formula: TeR.sup.1 R.sup.2 wherein R 1 is a fluorinated alkyl having the formula C n F.sub.(2n+1)-x H x where n may range from 1 to 6 and x may range from 0 to 2n, and R 2 is selected from the group consisting of alkyls having 2 to 6 carbon atoms, cycloalkyls having 3 to 6 carbon atoms, allyl, alkyl-substituted allyl having 4 to 6 carbon atoms, cyclopentadienyl, benzyl, alpha-methylbenzyl, and bis(alpha-methyl)benzyl. The novel tellurium reagents are useful as sources for organometallic vapor deposition processes, particularly the MOCVD fabrication of II-VI semiconductor materials such as Hg x Cd 1-x Te. The compounds are synthesized by high yield ligand exchange reactions between Te(R 1 ) 2 and Te(R 2 ) 2 .
Inventors
- 👤 Duncan W. Brown
- 👤 Rein U. Kirss
- 👤 Douglas Gordon
Bibliographic Details
Claims Analysis
Total Claims: 7References Cited (Backward Citations)
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