Physical placement of content addressable memories

Claim 2

A content addressable memory (CAM) bit associated with a flash memory array having a guard ring, the CAM bit comprising: a flash memory cell located on a column fabricated as part of the flash memory array and within the guard ring.

Claim 3

The content addressable memory of claim 1 wherein a vertical pitch of the CAM bit relative to the flash memory array is within a range of 6 to 8.

Claim 4

The content addressable memory of claim 2 wherein the flash memory cell is included within the array step and repeat size.

Claim 5

The content addressable memory of claim 1 wherein: a) the column has a first multiplicity of gate straps at a first voltage level and the flash array has a second multiplicity of gate straps at a second voltage level, the first multiplicity of gate straps being located a minimum separation distance away from the second multiplicity of gate straps, the minimum separation distance being defined by the lithographic process used to fabricate the first multiplicity and the second multiplicity of gate straps.

Claim 6

A nonvolatile semiconductor memory comprising: a) a main memory array having a multiplicity of memory cells; b) a guard ring enclosing the main memory array; c) a redundant memory cell for replacing a defective memory cell within the main memory array; and d) a content addressable memory for activating the redundant memory cell, the content addressable memory including a CAM memory cell located on a column of the main memory array and within the guard ring, wherein a vertical pitch of the CAM cell relative to the main memory array is within a range of 6-8.

Claim 7

A nonvolatile semiconductor memory comprising: a) a main memory array having a multiplicity of memory cells; b) a guard ring enclosing the main memory array; c) a redundant memory cell for replacing a defective memory cell within the main memory array; and d) a content addressable memory for activating the redundant memory cell, the content addressable memory including a CAM memory cell located on a column of the main memory array and within the guard ring, wherein a vertical pitch of the CAM cell relative to the main memory array is within a range of 6-8.

Claim 8

The content addressable memory of claim 5 wherein the CAM memory cell is included within the array step and repeat size.

Claim 9

The content addressable memory of claim 5 wherein: a) the column has a first multiplicity of gate straps at a first voltage level and the flash array has a second multiplicity of gate straps at a second voltage level, the first multiplicity of gate straps being located a minimum separation distance away from the second multiplicity of gate straps, the minimum separation distance being defined by the lithographic process used to fabricate the first multiplicity and the second multiplicity of gate straps.