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US5309000A
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Diamond films with heat-resisting ohmic electrodes
Assignee: Kobe Steel Ltd
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Filing: 1993-04-22
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Granted: 1994-05-03
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Expires: 2013-04-22
Abstract
Abstract A is a heat-resisting ohmic electrode on diamond film, including: a p-type semiconducting diamond film; a boron-doped diamond layer provided on the semiconducting diamond film; and an electrode element made of p-type Si selectively formed on the boron-doped diamond layer; wherein the boron concentration in the boron-doped diamond layer is from 1.0x1019 to 1.8x1023 cm-3, and at least one impurity selected from the group consisting of B, Al and Ga is doped in the electrode element with a concentration from 1.0x1020 to 5.0x1022 cm-3. The ohmic electrode on diamond film is applicable for electronic devices operative at high temperature.
Inventors
- 👤 Kimitsugu Saito
- 👤 Koji Kobashi
- 👤 Kozo Nishimura
- 👤 Koichi Miyata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-09 04:58
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D62/00; H10D62/80; H10D62/83; H10D62/8303; H10D64/00; H10D64/60; H10D64/62; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10P30/2044; H10P30/21; H10P30/28; H10W; H10W72/00; H10W72/90; H10W72/50; H10W72/531; H10W72/536; H10W72/59
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
91 words
A heat-resisting ohmic electrode on diamond film, comprising: a p-type semiconducting diamond film; a boron-doped diamond layer provided on said semiconducting diamond film; and an electrode element made of a p-type Si selectively formed on said boron-doped layer; wherein boron is doped in said boron-doped diamond layer with a concentration from 1.0×10 19 to 1.8×10 23 cm -3 , and at least one impurity selected from the group consisting of B, Al and Ga is doped in said electrode element with a concentration from 1.0×10 20 5.0×10 22 cm -3 .
Claim 2
Dependent Claim
91 words
A heat-resisting ohmic electrode on diamond film, comprising: a p-type semiconducting diamond film; a boron-doped diamond layer provided on said semiconducting diamond film; and an electrode element made of a p-type Si selectively formed on said boron-doped layer; wherein boron is doped in said boron-doped diamond layer with a concentration from 1.0×10 19 to 1.8×10 23 cm -3 , and at least one impurity selected from the group consisting of B, Al and Ga is doped in said electrode element with a concentration from 1.0×10 20 5.0×10 22 cm -3 .
Claim 3
Dependent Claim
29 words
The electrode on diamond film according to claim 1, wherein said boron-doped diamond layer is formed by any one of a vapor-phase synthesis process and an ion implantation process.
Claim 4
Dependent Claim
40 words
The electrode on diamond film according to claim 1, wherein said p-type semiconducting diamond film and said boron-doped diamond layer have been annealed at a temperature between 300°to 1200° C. prior to forming said electrode element made of p-type Si.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
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| 3.5 Years (Year 4) | 1997-05-02 | 1997-11-01 | 1998-05-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-05-02 | 2001-11-01 | 2002-05-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-05-02 | 2005-11-01 | 2006-05-03 | $7700.00 | Window Closed / Lapsed |