US5308797A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Leads for semiconductor chip assembly and method
Assignee: Texas Instruments Inc
•
Filing: 1992-11-24
•
Granted: 1994-05-03
•
Expires: 2012-11-24
Abstract
Abstract A semiconductor device is formed without using a leadframe. A semiconductor device is formed in one area of a semiconductor chip and a second area includes conductors to which lead wires are bonded. The lead wires are used for mounting the semiconductor device.
Inventors
- 👤 David R. Kee
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 17:42
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/40; H10W70/411; H10W70/415; Y; Y10; Y10S; Y10S228/00; Y10S228/902; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49169; Y10T29/49171
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
102 words
A method of making a semiconductor device with leads formed directly on the semiconductor chip, comprising the steps of: forming a semiconductor device with bond pads thereon in a central conductive area of a semiconductor chip leaving a peripheral area of non-conductive semiconductor material that is electrically separate from the semiconductor device; forming a plurality of conductors on said non-conductive peripheral area around said centrally located semiconductor device, said conductors being electrically connected to said semiconductor device; bonding and forming a lead wire from a continuous wire feed source to each of said conductors; and cutting said formed lead wire to length.
Claim 2
Independent Claim
102 words
A method of making a semiconductor device with leads formed directly on the semiconductor chip, comprising the steps of: forming a semiconductor device with bond pads thereon in a central conductive area of a semiconductor chip leaving a peripheral area of non-conductive semiconductor material that is electrically separate from the semiconductor device; forming a plurality of conductors on said non-conductive peripheral area around said centrally located semiconductor device, said conductors being electrically connected to said semiconductor device; bonding and forming a lead wire from a continuous wire feed source to each of said conductors; and cutting said formed lead wire to length.
Claim 3
Dependent Claim
22 words
The method according to claim 1, including the step of forming the lead wire to a desired shape during said bonding step.
Claim 4
Dependent Claim
26 words
The method according to claim 1, including the step of coating the surface of the semiconductor chip with a passivation material to encapsulate the semiconductor device.
Claim 5
Dependent Claim
16 words
The method according to claim 1, wherein said plurality of conducts are of a noncorrosive material.
Claim 6
Dependent Claim
16 words
The method according to claim 1, wherein said lead wire is ultrasonically bonded to said conductor.
Claim 7
Independent Claim
104 words
A method of making a semiconductor device with leads formed directly on the semiconductor chip, comprising the steps of: forming a semiconductor device with bond pads thereon in a first conductive area of a semiconductor chip leaving a second non-conductive area of semiconductor material that is separate from the semiconductor device; forming a plurality of conductors on said second non-conductive area adjacent said first area, and electrically connecting them to the bond pads on said semiconductor device; electrically connecting and forming a lead wire to each conductor on said second area of said semiconductor chip; and encapsulating only the top surface of the device.
Claim 8
Independent Claim
104 words
A method of making a semiconductor device with leads formed directly on the semiconductor chip, comprising the steps of: forming a semiconductor device with bond pads thereon in a first conductive area of a semiconductor chip leaving a second non-conductive area of semiconductor material that is separate from the semiconductor device; forming a plurality of conductors on said second non-conductive area adjacent said first area, and electrically connecting them to the bond pads on said semiconductor device; electrically connecting and forming a lead wire to each conductor on said second area of said semiconductor chip; and encapsulating only the top surface of the device.
Claim 9
Dependent Claim
22 words
The method according to claim 6, including the step of forming the lead wire to a desired shape during said bonding step.
Claim 10
Dependent Claim
26 words
The method according to claim 6, including the step of coating the surface of the semiconductor chip with a passivation material to encapsulate the semiconductor device.
Claim 11
Dependent Claim
14 words
The method according to claim 6, wherein said conductors are of a noncorrosive material.
Claim 12
Dependent Claim
16 words
The method according to claim 6, wherein said lead wire is ultrasonically bonded to said conductors.
References Cited (Backward Citations)
US5079190A
Cited
US4994411A
Cited
US5008997A
Cited
US5066614A
Cited
US5095361A
Cited
US5086018A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-05-02 | 1997-11-01 | 1998-05-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-05-02 | 2001-11-01 | 2002-05-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-05-02 | 2005-11-01 | 2006-05-03 | $7700.00 | Window Closed / Lapsed |