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US5308797A Expired / Lapsed US ⏱️ 0.0 years remaining

Leads for semiconductor chip assembly and method

Assignee: Texas Instruments Inc
•
Filing: 1992-11-24
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Granted: 1994-05-03
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Expires: 2012-11-24
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Abstract

Abstract A semiconductor device is formed without using a leadframe. A semiconductor device is formed in one area of a semiconductor chip and a second area includes conductors to which lead wires are bonded. The lead wires are used for mounting the semiconductor device.

Inventors

  • 👤 David R. Kee

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-05 17:42
CPC Classifications
H; H10; H10W; H10W70/00; H10W70/40; H10W70/411; H10W70/415; Y; Y10; Y10S; Y10S228/00; Y10S228/902; Y10T; Y10T29/00; Y10T29/49; Y10T29/49002; Y10T29/49117; Y10T29/49169; Y10T29/49171

Claims Analysis

Total Claims: 12
Claim 1
Independent Claim 102 words
A method of making a semiconductor device with leads formed directly on the semiconductor chip, comprising the steps of: forming a semiconductor device with bond pads thereon in a central conductive area of a semiconductor chip leaving a peripheral area of non-conductive semiconductor material that is electrically separate from the semiconductor device; forming a plurality of conductors on said non-conductive peripheral area around said centrally located semiconductor device, said conductors being electrically connected to said semiconductor device; bonding and forming a lead wire from a continuous wire feed source to each of said conductors; and cutting said formed lead wire to length.
Claim 2
Independent Claim 102 words
A method of making a semiconductor device with leads formed directly on the semiconductor chip, comprising the steps of: forming a semiconductor device with bond pads thereon in a central conductive area of a semiconductor chip leaving a peripheral area of non-conductive semiconductor material that is electrically separate from the semiconductor device; forming a plurality of conductors on said non-conductive peripheral area around said centrally located semiconductor device, said conductors being electrically connected to said semiconductor device; bonding and forming a lead wire from a continuous wire feed source to each of said conductors; and cutting said formed lead wire to length.
Claim 3
Dependent Claim 22 words
The method according to claim 1, including the step of forming the lead wire to a desired shape during said bonding step.
Claim 4
Dependent Claim 26 words
The method according to claim 1, including the step of coating the surface of the semiconductor chip with a passivation material to encapsulate the semiconductor device.
Claim 5
Dependent Claim 16 words
The method according to claim 1, wherein said plurality of conducts are of a noncorrosive material.
Claim 6
Dependent Claim 16 words
The method according to claim 1, wherein said lead wire is ultrasonically bonded to said conductor.
Claim 7
Independent Claim 104 words
A method of making a semiconductor device with leads formed directly on the semiconductor chip, comprising the steps of: forming a semiconductor device with bond pads thereon in a first conductive area of a semiconductor chip leaving a second non-conductive area of semiconductor material that is separate from the semiconductor device; forming a plurality of conductors on said second non-conductive area adjacent said first area, and electrically connecting them to the bond pads on said semiconductor device; electrically connecting and forming a lead wire to each conductor on said second area of said semiconductor chip; and encapsulating only the top surface of the device.
Claim 8
Independent Claim 104 words
A method of making a semiconductor device with leads formed directly on the semiconductor chip, comprising the steps of: forming a semiconductor device with bond pads thereon in a first conductive area of a semiconductor chip leaving a second non-conductive area of semiconductor material that is separate from the semiconductor device; forming a plurality of conductors on said second non-conductive area adjacent said first area, and electrically connecting them to the bond pads on said semiconductor device; electrically connecting and forming a lead wire to each conductor on said second area of said semiconductor chip; and encapsulating only the top surface of the device.
Claim 9
Dependent Claim 22 words
The method according to claim 6, including the step of forming the lead wire to a desired shape during said bonding step.
Claim 10
Dependent Claim 26 words
The method according to claim 6, including the step of coating the surface of the semiconductor chip with a passivation material to encapsulate the semiconductor device.
Claim 11
Dependent Claim 14 words
The method according to claim 6, wherein said conductors are of a noncorrosive material.
Claim 12
Dependent Claim 16 words
The method according to claim 6, wherein said lead wire is ultrasonically bonded to said conductors.

References Cited (Backward Citations)

US5079190A Cited
US4994411A Cited
US5008997A Cited
US5066614A Cited
US5095361A Cited
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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1997-05-02 1997-11-01 1998-05-03 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 2001-05-02 2001-11-01 2002-05-03 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 2005-05-02 2005-11-01 2006-05-03 $7700.00 Window Closed / Lapsed

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