Gold/tin eutectic bonding for tape automated bonding process

Claim 2

A tape automated bonding method of bonding copper beam leads of lead frame tape to gold die bumps formed on contract pads of a semiconductor device, wherein the tape includes a plurality of interconnected beam leads defined by at least one opening in the tape such that each beam lead has an inner end and an outer end, the method comprising: depositing a gold layer on the copper beam leads; masking a region of each beam lead from further deposition of material such that a predetermined portion of each beam lead is exposed for further deposition of material; depositing by sputtering or vapor deposition a predetermined amount of tin layer on the gold layer on the exposed portion of each beam lead; establishing contact between the tin layer on each beam lead and a gold die bump to which each beam lead is to be bonded after the tin layer has been deposited on said beam lead; and applying to the contact between each lead and die bump a predetermined amount of pressure and heat, thereby forming a bond between each beam lead and the die bump to which the beam lead is to be bonded such that the bond formed includes a primary eutectic of the combination of tin and gold with substantially no pure tin in contact with the copper beam lead.

Claim 3

The method of claim 1, wherein the depositing of a predetermined amount of tin layer deposits a weight of tin less than 20 percent of the total weight of gold deposited on both the beam lead and on the die bump to which the lead is to be bonded.

Claim 4

The method of claim 1, wherein the tin depositing step deposits tin only on the region of each beam lead where bonding to a die bump is to occur.

Claim 5

The method of claim 1, wherein the pressure and heat applying step applies pressure in the range of 1 to 4 grams per square mil.

Claim 6

The method of claim 1, wherein the pressure and heat applying step applies temperature in the range of 300 to 350 degrees centigrade.

Claim 7

The method of claim 5, wherein the steps are performed in the listed order.

Claim 8

A tape automated bonding method of bonding copper beam leads of lead frame tape to gold die bumps formed on contract pads of a semiconductor device, wherein the tape includes a plurality of interconnected beam leads defined by at least one opening in the tape such that each beam lead has an inner end and an outer end, the method consisting essentially of: depositing a gold layer on the copper beam leads; masking a region of each beam lead from further deposition of material such that a predetermined portion of each beam lead is exposed for further deposition of material; depositing by sputtering or vapor deposition a predetermined amount of tin in a layer on the gold layer on the exposed portion of each beam lead; establishing contact between the tin layer on each beam lead and a gold die bump to which each beam lead is to be bonded after the tin in a layer has been deposited on said beam lead; and applying to the contact between each lead and die bump a predetermined amount of pressure and heat, thereby forming a bond between each beam lead and the die bump to which the beam lead is to be bonded such that the bond formed includes a primary eutectic of the combination of tin and gold with substantially no pure tin in contact with the copper beam lead.

Claim 9

A tape automated bonding method of bonding copper beam leads of lead frame tape to gold die bumps formed on contract pads of a semiconductor device, wherein the tape includes a plurality of interconnected beam leads defined by at least one opening in the tape such that each beam lead has an inner end and an outer end, the method consisting essentially of: depositing a gold layer on the copper beam leads; masking a region of each beam lead from further deposition of material such that a predetermined portion of each beam lead is exposed for further deposition of material; depositing by sputtering or vapor deposition a predetermined amount of tin in a layer on the gold layer on the exposed portion of each beam lead; establishing contact between the tin layer on each beam lead and a gold die bump to which each beam lead is to be bonded after the tin in a layer has been deposited on said beam lead; and applying to the contact between each lead and die bump a predetermined amount of pressure and heat, thereby forming a bond between each beam lead and the die bump to which the beam lead is to be bonded such that the bond formed includes a primary eutectic of the combination of tin and gold with substantially no pure tin in contact with the copper beam lead.

Claim 10

The method of claim 7, wherein the depositing of a predetermined amount of tin layer deposits a weight of tin less than 20 percent of the total weight of gold deposited on both the beam lead and on the die bump to which the lead is to be bonded.

Claim 11

The method of claim 7, wherein the tin depositing step deposits tin only on the region of each beam lead where bonding to a die bump is to occur.

Claim 12

The method of claim 7, wherein the pressure and heat applying step applies pressure in the range of 1 to 4 grams per square mil.

Claim 13

The method of claim 7, wherein the pressure and heat applying step applies temperature in the range of 300 to 350 degrees centigrade.

Claim 14

A tape automated bonding method of bonding copper beam leads of lead frame tape to gold die bumps formed on contact pads of a semiconductor device, wherein the tape includes a plurality of interconnected beam leads defined by at least one opening in the tape such that each beam lead has an inner end and an outer end, the method comprising: depositing a gold layer on the copper beam leads; masking a region of each beam lead from further deposition of material such that a predetermined portion of each beam lead is exposed for further deposition of material; depositing by sputtering or vapor deposition a predetermined amount of tin layer on the gold layer on the exposed portion of each beam lead such that the tin is deposited only on the region of each beam lead where bonding to a die bump is to occur, and further such that the weight of tin deposited on each beam lead is less than 20 percent of the total weight of gold deposited on that beam lead together with the weight of gold making up the die bump to which that beam lead is to be bonded; establishing contact between the tin layer on each beam lead and a gold die bump to which each beam lead is to be bonded after the tin layer has been deposited on said beam lead; and applying a pressure of between 1 and 4 grams per square mil at a temperature of from 300 to 350 degrees centigrade to the contact between each lead and die bump, thereby forming a bond between each beam lead and the die bump to which the beam lead is to be bonded such that the bond formed includes a primary eutectic of the combination of tin and gold with substantially no pure tin in contact with the copper beam lead.

Claim 15

A tape automated bonding method of bonding copper beam leads of lead frame tape to gold die bumps formed on contact pads of a semiconductor device, wherein the tape includes a plurality of interconnected beam leads defined by at least one opening in the tape such that each beam lead has an inner end and an outer end, the method comprising: depositing a gold layer on the copper beam leads; masking a region of each beam lead from further deposition of material such that a predetermined portion of each beam lead is exposed for further deposition of material; depositing by sputtering or vapor deposition a predetermined amount of tin layer on the gold layer on the exposed portion of each beam lead such that the tin is deposited only on the region of each beam lead where bonding to a die bump is to occur, and further such that the weight of tin deposited on each beam lead is less than 20 percent of the total weight of gold deposited on that beam lead together with the weight of gold making up the die bump to which that beam lead is to be bonded; establishing contact between the tin layer on each beam lead and a gold die bump to which each beam lead is to be bonded after the tin layer has been deposited on said beam lead; and applying a pressure of between 1 and 4 grams per square mil at a temperature of from 300 to 350 degrees centigrade to the contact between each lead and die bump, thereby forming a bond between each beam lead and the die bump to which the beam lead is to be bonded such that the bond formed includes a primary eutectic of the combination of tin and gold with substantially no pure tin in contact with the copper beam lead.

Claim 16

A tape automated bonding method of bonding copper beam leads of lead frame tape to gold die bumps formed on contact pads of a semiconductor device, wherein the tape includes a plurality of interconnected beam leads defined by at least one opening in the tape such that each beam lead has an inner end and an outer end, the method consisting essentially of: depositing a gold layer on the copper beam leads; masking a region of each beam lead from further deposition of material such that a predetermined portion of each beam lead is exposed for further deposition of material; depositing by sputtering or vapor deposition a predetermined amount of tin layer on the gold layer on the exposed portion of each beam lead such that the tin is deposited only on the region of each beam lead where bonding to a die bump is to occur, and further such that the weight of tin deposited on each beam lead is less than 20 percent of the total weight of gold deposited on that beam lead together with the weight of gold making up the die bump to which that beam lead is to be bonded; establishing contact between the tin layer on each beam lead and a gold die bump to which each beam lead is to be bonded after the tin layer has been deposited on said beam lead; and applying a pressure of between 1 and 4 grams per square mil at a temperature of from 300 to 350 degrees centigrade to the contact between each lead and die bump, thereby forming a bond between each beam lead and the die bump to which the beam lead is to be bonded such that the bond formed includes a primary eutectic of the combination of tin and gold with substantially no pure tin in contact with the copper beam lead.

Claim 17

A tape automated bonding method of bonding copper beam leads of lead frame tape to gold die bumps formed on contact pads of a semiconductor device, wherein the tape includes a plurality of interconnected beam leads defined by at least one opening in the tape such that each beam lead has an inner end and an outer end, the method consisting essentially of: depositing a gold layer on the copper beam leads; masking a region of each beam lead from further deposition of material such that a predetermined portion of each beam lead is exposed for further deposition of material; depositing by sputtering or vapor deposition a predetermined amount of tin layer on the gold layer on the exposed portion of each beam lead such that the tin is deposited only on the region of each beam lead where bonding to a die bump is to occur, and further such that the weight of tin deposited on each beam lead is less than 20 percent of the total weight of gold deposited on that beam lead together with the weight of gold making up the die bump to which that beam lead is to be bonded; establishing contact between the tin layer on each beam lead and a gold die bump to which each beam lead is to be bonded after the tin layer has been deposited on said beam lead; and applying a pressure of between 1 and 4 grams per square mil at a temperature of from 300 to 350 degrees centigrade to the contact between each lead and die bump, thereby forming a bond between each beam lead and the die bump to which the beam lead is to be bonded such that the bond formed includes a primary eutectic of the combination of tin and gold with substantially no pure tin in contact with the copper beam lead.

Claim 18

A tape automated bonding method of bonding copper beam leads of lead frame tape to gold die bumps formed on contact pads of a semiconductor device, wherein the tape includes a plurality of interconnected beam leads defined by at least one opening in the tape such that each beam lead has an inner end and an outer end, the method consisting essentially of the steps, in the following order: depositing a gold layer on the copper beam leads; masking a region of each beam lead from further deposition of material such that a predetermined portion of each beam lead is exposed for further deposition of material; depositing by sputtering or vapor deposition a predetermined amount of tin layer on the gold layer on the exposed portion of each beam lead such that the tin is deposited only on the region of each beam lead where bonding to a die bump is to occur, and further such that the weight of tin deposited on each beam lead is less than 20 percent of the total weight of gold deposited on that beam lead together with the weight of gold making up the die bump to which that beam lead is to be bonded; establishing contact between the tin layer on each beam lead and a gold die bump to which each beam lead is to be bonded after the tin layer has been deposited on said beam lead; and applying a pressure of between 1 and 4 grams per square mil at a temperature of from 300 to 350 degrees centigrade to the contact between each lead and die bump, thereby forming a bond between each beam lead and the die bump to which the beam lead is to be bonded such that the bond formed includes a primary eutectic of the combination of tin and gold with substantially no pure tin in contact with the copper beam lead.

Claim 19

A tape automated bonding method of bonding copper beam leads of lead frame tape to gold die bumps formed on contact pads of a semiconductor device, wherein the tape includes a plurality of interconnected beam leads defined by at least one opening in the tape such that each beam lead has an inner end and an outer end, the method consisting essentially of the steps, in the following order: depositing a gold layer on the copper beam leads; masking a region of each beam lead from further deposition of material such that a predetermined portion of each beam lead is exposed for further deposition of material; depositing by sputtering or vapor deposition a predetermined amount of tin layer on the gold layer on the exposed portion of each beam lead such that the tin is deposited only on the region of each beam lead where bonding to a die bump is to occur, and further such that the weight of tin deposited on each beam lead is less than 20 percent of the total weight of gold deposited on that beam lead together with the weight of gold making up the die bump to which that beam lead is to be bonded; establishing contact between the tin layer on each beam lead and a gold die bump to which each beam lead is to be bonded after the tin layer has been deposited on said beam lead; and applying a pressure of between 1 and 4 grams per square mil at a temperature of from 300 to 350 degrees centigrade to the contact between each lead and die bump, thereby forming a bond between each beam lead and the die bump to which the beam lead is to be bonded such that the bond formed includes a primary eutectic of the combination of tin and gold with substantially no pure tin in contact with the copper beam lead.