Patent US5308796A successfully refreshed from Google Patents.
US5308796A
Expired / Lapsed
US
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Fabrication of electronic devices by electroless plating of copper onto a metal silicide
Assignee: Nokia Bell Labs
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Filing: 1993-04-27
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Granted: 1994-05-03
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Expires: 2013-04-27
Abstract
Abstract It has been found that selective metallization in integrated circuits is expeditiously achieved through a copper plating procedure. In this process, palladium silicide is used as a catalytic surface and an electroless plating bath is employed to introduce copper plating only in regions where the silicide is present. Use of this procedure yields superior filling of vias and windows with excellent conductivity.
Inventors
- 👤 Leonard C. Feldman
- 👤 Gregg S. Higashi
- 👤 Cecilia Y. Mak
- 👤 Barry Miller
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 20:43
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P14/46; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/056; H10W20/057
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
56 words
A process for fabricating a device comprising the steps of forming a layer on a substrate, forming an opening through said layer to said substrate, forming a region of metal silicide on said substrate in the region positioned at the bottom of said opening and plating copper material onto said silicide using an electroless plating bath.
Claim 2
Dependent Claim
56 words
A process for fabricating a device comprising the steps of forming a layer on a substrate, forming an opening through said layer to said substrate, forming a region of metal silicide on said substrate in the region positioned at the bottom of said opening and plating copper material onto said silicide using an electroless plating bath.
Claim 3
Dependent Claim
14 words
The process of claim 1 wherein said metal silicide comprises platinum or palladium silicide.
Claim 4
Dependent Claim
12 words
The process of claim 1 wherein said layer comprises a dielectric material.
Claim 5
Dependent Claim
11 words
The process of claim 3 wherein said dielectric comprises silicon dioxide.
Claim 6
Dependent Claim
14 words
The process of claim 1 wherein said substrate comprises an integrated circuit being processed.
Claim 7
Dependent Claim
28 words
The process of claim 1 wherein said silicide is found by deposition of said metal onto said layer and into said opening, and wherein said region comprises silicon.
Claim 8
Dependent Claim
16 words
The process of claim 6 wherein said metal on said layer is removed before said plating.
Claim 9
Dependent Claim
10 words
The process of claim 7 wherein said removal comprises etching.
Claim 10
Dependent Claim
16 words
The process of claim 1 wherein said bath comprises formaldehyde and a source of copper ions.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-05-02 | 1997-11-01 | 1998-05-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-05-02 | 2001-11-01 | 2002-05-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-05-02 | 2005-11-01 | 2006-05-03 | $7700.00 | Window Closed / Lapsed |