Patent US5308776A successfully refreshed from Google Patents.
US5308776A
Expired / Lapsed
US
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Method of manufacturing SOI semiconductor device
Assignee: Fujitsu Ltd
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Filing: 1992-02-18
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Granted: 1994-05-03
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Expires: 2012-02-18
Abstract
Abstract A method of manufacturing an SOI type substrate by forming a poly-Si layer on the surface of the one Si single crystal wafer (A), then forming a SiO 2 film on the surface of the other Si single crystal wafer (B), bonding these wafers with each other, removing the end portion of the one Si single crystal wafer (A) by a polishing method leaving a part of this Si single crystal wafer as an element forming layer, providing a high concentration impurity region by selectively introducing impurity into the element forming layer and forming a high concentration impurity diffused region in the vicinity of interface with the poly-Si layer of the element forming layer by heat treatment; and a bipolar transistor formed on an SOI type substrate forming a high concentration impurity diffused region as a buried collector layer.
Inventors
- 👤 Hiroshi Gotou
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 14:53
CPC Classifications
H; H10; H10P; H10P36/00; H10P36/03; H10P36/07; H10P90/00; H10P90/19; H10P90/1904; H10P90/1906; H10P90/1914; H10W; H10W10/00; H10W10/10; H10W10/181; H10W15/00; H10W15/01; Y; Y10; Y10S; Y10S148/00; Y10S148/012; Y10S148/035
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
241 words
A method of manufacturing an SOI device having a conductive impurity layer; said method comprising the steps of: (a) forming a non-single crystal silicon layer on the exterior of a first single crystal wafer and an insulating film on the exterior of a second single crystal wafer and thereafter bonding these first and second single crystal wafers with each other through said non-single crystal silicon layer and said insulating film; (b) removing by polishing a part of said non-single crystal silicon layer and a part of said first single crystal wafer from an end surface on a side of said first single crystal wafer, leaving a part of said first single crystal wafer as an element forming layer having an interface with said non-single crystal silicon layer; (c) selectively introducing impurity atoms into said element forming layer to provide a conductive impurity region at a first impurity concentration reaching said non-single crystal silicon layer; (d) forming a conductive impurity diffused region, having a second concentration lower than the first concentration, in said element forming layer and substantially extending to the interface between said element forming layer and said non-single crystal silicon layer, said conductive impurity diffused region formed by impurity diffusion from said conductive impurity region through said non-single crystal silicon layer at least, by using heat treatment; and (e) forming a transistor in a region between an exterior surface of said element forming layer and said conductive impurity diffused region.
Claim 2
Independent Claim
241 words
A method of manufacturing an SOI device having a conductive impurity layer; said method comprising the steps of: (a) forming a non-single crystal silicon layer on the exterior of a first single crystal wafer and an insulating film on the exterior of a second single crystal wafer and thereafter bonding these first and second single crystal wafers with each other through said non-single crystal silicon layer and said insulating film; (b) removing by polishing a part of said non-single crystal silicon layer and a part of said first single crystal wafer from an end surface on a side of said first single crystal wafer, leaving a part of said first single crystal wafer as an element forming layer having an interface with said non-single crystal silicon layer; (c) selectively introducing impurity atoms into said element forming layer to provide a conductive impurity region at a first impurity concentration reaching said non-single crystal silicon layer; (d) forming a conductive impurity diffused region, having a second concentration lower than the first concentration, in said element forming layer and substantially extending to the interface between said element forming layer and said non-single crystal silicon layer, said conductive impurity diffused region formed by impurity diffusion from said conductive impurity region through said non-single crystal silicon layer at least, by using heat treatment; and (e) forming a transistor in a region between an exterior surface of said element forming layer and said conductive impurity diffused region.
Claim 3
Dependent Claim
37 words
A manufacturing method according to claim 1, said method further comprising the step of (f) providing a metal layer which forms a silicide on said non-single crystal silicon layer formed on said first silicon single crystal wafer.
Claim 4
Dependent Claim
52 words
A manufacturing method according to claim 1, said method further comprising the step of (f) selectively etching said element forming layer to selectively reduce the thickness of said element forming layer, where said conductive impurity region is formed in step (c), before said selectively introducing of the impurity atoms in step (c).
Claim 5
Dependent Claim
69 words
A manufacturing method according to claim 1, wherein said selectively introducing of the impurity atoms in step (c) forms a plurality of conductive impurity regions and said heat treatment in step (d) forms a plurality of conductive impurity diffused regions, and wherein steps (c) and (d) are controlled so that said conductive impurity diffused regions formed by impurity diffusion from said conductive impurity region are connected with each other.
Claim 6
Dependent Claim
60 words
A manufacturing method according to claim 1, said method further comprising the steps of: (f) forming a trench which reaches said insulating film from the surface of said element forming layer through said element forming layer and said non-single crystal silicon layer; and (g) forming a trench isolation region by filling the inside of said trench with an insulating material.
Claim 7
Dependent Claim
34 words
A manufacturing method according to claim 1, wherein said insulating material includes, at least one material selected from the group consisting of a silicon oxide film, a silicon nitride film and a polysilicon layer.
Claim 8
Dependent Claim
30 words
A manufacturing method according to claim 5, wherein said trench type isolation region is formed in a position in contact with a part of said high concentration impurity diffused region.
Claim 9
Dependent Claim
27 words
A manufacturing method according to claim 1, wherein non-single crystal silicon layer is selected from the group consisting of a poly-silicon layer and an amorphous silicon layer.
Claim 10
Dependent Claim
36 words
A manufacturing method according to claim 1, wherein said insulating film on the surface of said second single crystal wafer is selected from the group consisting of a silicon oxide layer and a silicon nitride layer.
Claim 11
Dependent Claim
29 words
A manufacturing method according to claim 2, wherein said metal forming the silicide is selected from the group consisting of molybdenum (Mo), tungsten (W), platinum (Pt), and titanium (Ti).
Claim 12
Dependent Claim
33 words
A manufacturing method according to claim 1, wherein the impurity atoms introduced selectively in step (c) to form said conductive impurity region have a conductivity type matching that of said element forming layer.
Claim 13
Dependent Claim
26 words
A manufacturing method according to claim 1, wherein the impurity atoms are selectively introduced in step (c) by ion implantation to form said conductive impurity region.
Claim 14
Dependent Claim
20 words
A manufacturing method according to claim 1, wherein the thickness of said element forming layer is thinner than 1 μm.
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