Solid state image pickup device

Claim 1

An amplification-type solid state imaging device including a plurality of picture elements arranged in a two-dimensional matrix, each of the plurality of picture elements comprising: a semiconductor substrate of a first conductivity type having an upper surface and a lower surface; a sensor region of a second conductivity type surrounded by the substrate; a source region of the first conductivity type extending downwardly from the upper surface of the substrate and positioned above the sensor region; a drain positioned below the sensor region; and a gate region of the second conductivity type extending downwardly from the upper surface of the substrate and positioned laterally substantially about the source region and the sensor region, the gate region and the sensor region defining a channel region therebetween.

Claim 10

A method of reading a picture element of an amplification-type solid state imaging device including a plurality of picture elements arranged in a two-dimensional matrix, the picture element including a semiconductor substrate of a first conductivity type having an upper surface and a lower surface, a sensor region of a second conductivity type surrounded by the substrate, a source region of the first conductivity type extending downwardly from the upper surface of the substrate and positioned above the sensor region, a drain positioned below the sensor region, and a gate region of the second conductivity type extending downwardly from the upper surface of the substrate and positioned laterally substantially about the source region and the sensor region, the gate region and the sensor region defining a channel region therebetween, comprising the steps of: exposing the sensor region to light such that photoelectrically produced charge accumulates therein; causing a source-drain current to flow through the channel region; sensing the source-drain current to produce an output signal representing an amount of light received by the sensor region; and resetting the picture element by removing charge accumulated in the sensor region through the gate region.

Claim 11

A method of reading a picture element of an amplification-type solid state imaging device including a plurality of picture elements arranged in a two-dimensional matrix, the picture element including a semiconductor substrate of a first conductivity type having an upper surface and a lower surface, a sensor region of a second conductivity type surrounded by the substrate, a source region of the first conductivity type extending downwardly from the upper surface of the substrate and positioned above the sensor region, a drain positioned below the sensor region, and a gate region of the second conductivity type extending downwardly from the upper surface of the substrate and positioned laterally substantially about the source region and the sensor region, the gate region and the sensor region defining a channel region therebetween, comprising the steps of: exposing the sensor region to light such that photoelectrically produced charge accumulates therein; causing a source-drain current to flow through the channel region; sensing the source-drain current to produce an output signal representing an amount of light received by the sensor region; and resetting the picture element by removing charge accumulated in the sensor region through the gate region.