US4641167A
Expired / Lapsed
US
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Semiconductor optoelectro transducer
Assignee: SEMICONDUCTOR RESEARCH FOUNDATION KAWAUCHI SENDAI-SHI MIYAGI 980 JAPAN A CORP OF
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Filing: 1982-11-30
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Granted: 1987-02-03
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Expires: 2002-11-30
Abstract
Abstract A semiconductor optoelectro transducer is highly sensitive in infrared to far infrared regions and is operable at high speed. To this end, the optoelectro transducer is formed by a static induction transistor or a static induction thyristor and an element which are excited by light of longer wavelength than that of light corresponding to the energy of the energy gap of a channel region, is added to the channel region which receives light.
Inventors
- 👤 Jun-chi Nishizawa
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-10 02:32
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/20; H10D64/27; H10D64/311; H10D12/00; H10D12/211; H10D12/212; H10D30/00; H10D30/202; H10F; H10F30/00; H10F30/20; H10F30/21; H10F30/28; H10F30/285; H10F30/2863; H10F39/00; H10F39/10; H10F39/12; H10F39/196
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
111 words
A semiconductor optoelectric transducer comprising: an intrinsic semiconductor material layer of one conductivity type having a channel region which is doped with an element that is excited by infrared light, said element being selected from the group consisting of gold, mercury and zinc; two main electrode regions connected to said semiconductor layer adjacent said channel region for supplying a flow of current through the channel region; a plurality of gate regions communicating with said channel region without closing communication through said channel region between said two main electrode regions; and a portion of said channel region being shaped for receiving infrared light for exciting the element doped into the channel region.
Claim 2
Dependent Claim
111 words
A semiconductor optoelectric transducer comprising: an intrinsic semiconductor material layer of one conductivity type having a channel region which is doped with an element that is excited by infrared light, said element being selected from the group consisting of gold, mercury and zinc; two main electrode regions connected to said semiconductor layer adjacent said channel region for supplying a flow of current through the channel region; a plurality of gate regions communicating with said channel region without closing communication through said channel region between said two main electrode regions; and a portion of said channel region being shaped for receiving infrared light for exciting the element doped into the channel region.
Claim 3
Dependent Claim
49 words
A transducer according to claim 1, wherein said plurality of gate regions are distributed in a layer through said channel region, said gate regions each comprising a high impurity layer of opposite conductivity type from said semiconductor layer, portions of said channel region extending through said gate regions layer.
Claim 4
Dependent Claim
28 words
A transducer according to claim 1, wherein said plurality of gate regions are formed in an annular high impurity layer of opposite conductivity type from said semiconductor layer.
Claim 5
Dependent Claim
36 words
A transducer according to claim 1, wherein said gate regions comprise a pair of gate region high impurity layers having opposite conductivity type from said semiconductor layer and positioned on opposite sides of said channel region.
Claim 6
Dependent Claim
22 words
A transducer according to claim 1, wherein said gate regions comprise metal electrodes made of a metal to form a Schottky barrier.
Claim 7
Dependent Claim
18 words
A transducer according to claim 1, including a capacitor connected to at least one of said gate regions.
Claim 8
Dependent Claim
15 words
A transducer according to claim 6, including a resistor connected in parallel with said capacitor.
Claim 9
Dependent Claim
15 words
A transducer according to claim 6, including a resistor connected in series with said capacitor.
Claim 10
Dependent Claim
19 words
A transducer according to claim 1, including a capacitor connected to at least one of said main electrode regions.
References Cited (Backward Citations)
US4497109A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1990-02-02 | 1990-08-04 | 1991-02-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1994-02-02 | 1994-08-04 | 1995-02-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1998-02-02 | 1998-08-04 | 1999-02-03 | $7700.00 | Window Closed / Lapsed |