US5295331A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of chamfering semiconductor wafer
Assignee: Tokyo Seimitsu Co Ltd
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Filing: 1992-11-18
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Granted: 1994-03-22
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Expires: 2012-11-18
Abstract
Abstract According to the present invention, the rotary axis O--O of a grindstone 22 is inclined to the rotary axis P--P of a semiconductor wafer 20 through an angle θ in a direction of the tangent line of the semiconductor wafer. Accordingly, a moving direction of abrasive grains of the grindstone 22 is divided into two including a component force A 1 in the grinding direction and a component force A 2 in the perpendicular direction, and these component forces increase the number of acting abrasive grains, so that the accuracy of the chamfering shape and the surface roughness can be improved. According to the present invention, the peripheral edge of the rotating semiconductor wafer is chamfered while the rotating grindstone 22 is reciprocatingly moved along the inclined grinding surface 24, whereby the number of the acting abrasive grains are increased, so that the accuracy of the chamfering shape and the surface roughness can be improved.
Inventors
- 👤 Katsuo Honda
- 👤 Yoshio Kamoshita
- 👤 Shinji Shibaoka
- 👤 Katsuhiro Tago
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 16:39
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/12; H10P90/128; B; B24; B24B; B24B9/00; B24B9/02; B24B9/06; B24B9/065
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
99 words
A method of chamfering a semiconductor wafer, wherein a rotating grindstone is abutted against a peripheral edge of the rotating semiconductor wafer for grinding the peripheral edge of the semiconductor wafer, characterized in that the peripheral edge of the semiconductor wafer is ground with a rotary axis of the grindstone being inclined in a direction of a line tangent to a cylindrical peripheral edge of the semiconductor wafer in a plane perpendicular to a rotary axis of the semiconductor wafer, the rotary axis of the grindstone and the rotary axis of the semiconductor wafer being located in different planes.
Claim 2
Independent Claim
99 words
A method of chamfering a semiconductor wafer, wherein a rotating grindstone is abutted against a peripheral edge of the rotating semiconductor wafer for grinding the peripheral edge of the semiconductor wafer, characterized in that the peripheral edge of the semiconductor wafer is ground with a rotary axis of the grindstone being inclined in a direction of a line tangent to a cylindrical peripheral edge of the semiconductor wafer in a plane perpendicular to a rotary axis of the semiconductor wafer, the rotary axis of the grindstone and the rotary axis of the semiconductor wafer being located in different planes.
Claim 3
Dependent Claim
58 words
The method of chamfering the semiconductor wafer as set forth in claim 1, wherein said grindstone is formed of a grindstone with a groove and the grinding surfaces of said grindstone are an inclined surface forming the side portion of the groove of said grindstone and the outer peripheral surface forming the bottom surface of the axial groove.
Claim 4
Independent Claim
94 words
A method of chamfering a semiconductor wafer, wherein a rotating grindstone is abutted against the peripheral edge of a rotating semiconductor wafer for grinding the peripheral edge of the semiconductor wafer, characterized in that an edge portion of the peripheral edge of the semiconductor wafer is ground while said grindstone is reciprocatingly moved in a direction inclined relative to a rotary axis of the grindstone and along an inclined surface of said grindstone, wherein a rotary axis of the semiconductor wafer and the rotary axis of said grindstone are kept parallel to each other.
Claim 5
Independent Claim
94 words
A method of chamfering a semiconductor wafer, wherein a rotating grindstone is abutted against the peripheral edge of a rotating semiconductor wafer for grinding the peripheral edge of the semiconductor wafer, characterized in that an edge portion of the peripheral edge of the semiconductor wafer is ground while said grindstone is reciprocatingly moved in a direction inclined relative to a rotary axis of the grindstone and along an inclined surface of said grindstone, wherein a rotary axis of the semiconductor wafer and the rotary axis of said grindstone are kept parallel to each other.
Claim 6
Dependent Claim
58 words
The method chamfering the semiconductor wafer as set forth in claim 3, characterized in that the outer peripheral surface at the peripheral edge of the semiconductor wafer is ground by the peripheral surface of the grindstone disposed in parallel to the rotary axis of the grindstone while the grindstone is reciprocatingly moved along the direction of the axis.
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US4594814A
Cited
JPS59214554A
Cited
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Cited
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1997-03-21 | 1997-09-20 | 1998-03-22 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 2001-03-21 | 2001-09-20 | 2002-03-22 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2005-03-21 | 2005-09-20 | 2006-03-22 | $7700.00 | Window Closed / Lapsed |