US4344260A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for precision shaping of wafer materials
Assignee: Shin-Etsu Chemical Co Ltd
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Filing: 1980-07-01
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Granted: 1982-08-17
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Expires: 2000-07-01
Abstract
Abstract The invention provides a novel and efficient apparatus for shaping wafer materials of exact dimensions from a single crystal rod. Different from the conventional procedure, the single crystal rod is first ground to have a cross section larger than the desired wafer by a margin to grind and then sliced into margined wafers and the margined wafer is subjected to contour grinding tracing a prototype of the desired wafer. The invention also provides an apparatus for the above process, with which the margined wafer can be not only ground to the exact diameter and outer shape but also chamfered at the peripheral edges successively by a single mounting on the apparatus.
Inventors
- 👤 Kesami Ogiwara
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 07:48
CPC Classifications
H; H10; H10P; H10P90/00; H10P90/12; H10P90/128; B; B24; B24B; B24B9/00; B24B9/02; B24B9/06; B24B9/065; B28; B28D; B28D5/00; Y; Y10; Y10S; Y10S148/00; Y10S148/054
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
82 words
A method for shaping a wafer material with accurate dimensions from a single crystal rod which comprises the steps of (a) grinding the single crystal rod so that the rod has a diameter 0.5 to 1.5 mm. larger than the finished wafer material as a grinding margin, (b) slicing the single crystal rod into margined wafers, and (c) subjecting the margined wafer to contour grinding tracing a prototype having a cross section exactly in conformity with the wafer material to be finished.
Claim 2
Independent Claim
82 words
A method for shaping a wafer material with accurate dimensions from a single crystal rod which comprises the steps of (a) grinding the single crystal rod so that the rod has a diameter 0.5 to 1.5 mm. larger than the finished wafer material as a grinding margin, (b) slicing the single crystal rod into margined wafers, and (c) subjecting the margined wafer to contour grinding tracing a prototype having a cross section exactly in conformity with the wafer material to be finished.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1985-08-16 | 1986-02-15 | 1986-08-17 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1989-08-16 | 1990-02-15 | 1990-08-17 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1993-08-16 | 1994-02-15 | 1994-08-17 | $7700.00 | Window Closed / Lapsed |