Nonvolatile random access memory

Claim 2

A nonvolatile random access memory, comprising: a substrate; a plurality of separate magnetically polarizable domains carried by said substrate, each domain having its axis oriented substantially normal to the surface of said substrate; a plurality of word write lines carried by said substrate; a plurality of bit write lines carried by said substrate; a plurality of conductive loop members carried by said substrate, each loop member substantially surrounding and being coupled to a different one of said domains and defining a plane oriented substantially normal to the axis of said different one of said domains, each of said loop members uniquely connected between one of said word write lines and one of said bit write lines; means connected to said word write lines and said bit write lines for driving either a first or second oppositely directed current through a selected loop member of sufficient magnitude to switch the residual magnetic field direction of the domain couple thereto; and a plurality of sensors, each located proximate a different one of said domains for passively sensing the residual magnetic field direction of that domain.

Claim 3

The memory of claim 1 wherein said sensors each comprise a field effect transistor defining a Hall effect channel connected to a pair of drains and oriented for penetration of its channel by the residual magnetic field of a different one of said domains.

Claim 4

The memory of claim 2 further comprising: a plurality of word read lines carried by said substrate; a plurality of paired bit read lines carried by said substrate; each of said field effect transistors uniquely connected with its source to one of said word read lines and each of its drains to one of said paired bit read lines; means for selectively supplying a current to each of said word read lines; and means for comparing the voltage across each of said paired bit read lines.

Claim 5

The memory of claim 2 wherein each field effect transistor further comprises a gate controlling majority carrier flow through its channel.

Claim 6

The memory of claim 1 wherein said substrate substantially defines a plane.

Claim 7

The memory of claim 1 wherein each of said loop members defines a path traversing at least 270 degrees about said domain axis.

Claim 8

The memory of claim 2 wherein one of said drains exhibits a greater resistance than the other and further comprising: a plurality of word read lines carried by said substrate; a plurality of bit read lines carried by said substrate; each of said field effect transistors uniquely connected with its source to one of said word read lines and each of its drains to one of said bit read lines; means for selectively supplying a current to each of said word read lines; and means for comparing the voltage on each of said bit read lines to a reference voltage.

Claim 9

A nonvolatile random access memory, comprising: a substrate; a plurality of separate magnetically polarizable domains carried by said substrate, each domain having its axis oriented substantially normal to the surface of said substrate; a plurality of word read lines carried by said substrate; a plurality of bit read lines carried by said substrate; a plurality of field effect transistors carried by said substrate, each defining a Hall effect channel connected to a pair of drains and each oriented for penetration of its channel by the residual magnetic field of a different one of said domains, each of said field effect transistors uniquely connected between one of said word read lines and one of said bit read lines; means connected to said word read lines and said bit read lines for detecting a voltage potential between the drains of a selected one of said field effect transistors; and means, coupled to each of said domains, for switching the residual magnetic field direction thereof, said switching means comprising a plurality of conductive loop members carried by said substrate, each loop member substantially surrounding and being coupled to a different one of said domains.

Claim 10

A nonvolatile random access memory, comprising: a substrate; a plurality of separate magnetically polarizable domains carried by said substrate, each domain having its axis oriented substantially normal to the surface of said substrate; a plurality of word read lines carried by said substrate; a plurality of bit read lines carried by said substrate; a plurality of field effect transistors carried by said substrate, each defining a Hall effect channel connected to a pair of drains and each oriented for penetration of its channel by the residual magnetic field of a different one of said domains, each of said field effect transistors uniquely connected between one of said word read lines and one of said bit read lines; means connected to said word read lines and said bit read lines for detecting a voltage potential between the drains of a selected one of said field effect transistors; and means, coupled to each of said domains, for switching the residual magnetic field direction thereof, said switching means comprising a plurality of conductive loop members carried by said substrate, each loop member substantially surrounding and being coupled to a different one of said domains.

Claim 11

The memory of claim 8 further comprising: a plurality of word write lines carried by said substrate; a plurality of bit write lines carried by said substrate; each of said loop members uniquely connected between one of said word write lines and one of said bit write lines; and means connected to said word write lines and said bit write lines for driving either a first or second oppositely directed current through a selected loop member of sufficient magnitude to switch the residual magnetic field direction of the domain coupled thereto.

Claim 14

The method of claim 10 wherein said sensor providing step comprises the steps of: providing a plurality of field effect transistors each defining a Hall effect channel and a pair of drains; and arranging each of said field effect transistors such that its channel is penetrated by the residual magnetic flux of a different one of said domains.