Hall effect semiconductor memory cell

Claim 2

A non-volatile, static magnetic semiconductor memory device comprising: a substrate of one condutivity type; a pair of spaced-apart regions of opposite conductivity type formed in said substrate, said spaced-apart regions defining a channel therebetween; a gate member for producing an inversion layer across said channel whenever a predetermined voltage is applied to said gate member; current sourcing means for flowing a current across said inversion layer from one of said spaced-apart regions to the other; a pair of base regions of said opposite conductivity type forming a junction in said substrate on opposite sides of said channel such that each of said base regions make ohmic connection to said inversion layer; a pair of emitter regions of said one conductivity type each of which forms a junction with one of said base regions; and a magnetic patch formed above said gate member for storing information in a magnetic field whose flux lines are substantially transverse to said current, said magnetic field producing a Hall voltage in said inversion layer which is sensed by said base regions.

Claim 3

The memory device of claim 1 wherein said substrate functions as a common collector to each of said base and emitter regions, thereby forming a pair of bipolar transistors which amplify and buffer said Hall voltage.

Claim 4

The memory device of claim 2 wherein said bipolar transistors are configured as emitter followers.

Claim 5

The memory device of claim 3 further comprising a means for writing said information to said patch.

Claim 6

The memory device of claim 4 wherein said bipolar transistors comprise NPN transistors.

Claim 7

The memory device of claim 4 wherein said bipolar transistor comprise PNP transistors.

Claim 8

The memory device of claim 4 wherein said writing means comprises at least one pair of current carrying conductors formed around said patch, said conductors accommodating a writing current large enough to magnetize said patch.

Claim 9

A Hall effect semiconductor memory device comprising: a plurality of memory cells formed in a semiconductor substrate and arranged in rows and columns so as to form an array, each cell including first and second regions of a conductivity type different than that of said substrate, said first and second regions forming a channel therebetween; a gate member for generating an inversion layer in said channel thereby permitting a current to flow between said first and said second regions; a magnetic patch for storing binary information in the form of a magnetic field, said magnetic field being directed perpendicular to said current flow; a pair of bipolar transistors each of which is formed in said substrate along opposite sides of said channel such that the base region of each of said transistors is ohmically coupled to said inversion layer to sense the Hall voltage generated in said inversion layer in a direction perpendicular to both said magnetic field and said current flow, said Hall voltage being representative of said binary information; said device further comprising: a plurality of row lines, the gate members of all cells in each row being coupled to a row line; a plurality of column lines each of which is coupled to one of the emitters of all cells within a column; row decoding means for selecting a row line to access the information stored in a particular memory cell within said array; and column decoding means for decoding said Hall voltage to access said data stored in said patch of said particular cell appearing on the column line coupled to the emitter of said particular cell.

Claim 10

A Hall effect semiconductor memory device comprising: a plurality of memory cells formed in a semiconductor substrate and arranged in rows and columns so as to form an array, each cell including first and second regions of a conductivity type different than that of said substrate, said first and second regions forming a channel therebetween; a gate member for generating an inversion layer in said channel thereby permitting a current to flow between said first and said second regions; a magnetic patch for storing binary information in the form of a magnetic field, said magnetic field being directed perpendicular to said current flow; a pair of bipolar transistors each of which is formed in said substrate along opposite sides of said channel such that the base region of each of said transistors is ohmically coupled to said inversion layer to sense the Hall voltage generated in said inversion layer in a direction perpendicular to both said magnetic field and said current flow, said Hall voltage being representative of said binary information; said device further comprising: a plurality of row lines, the gate members of all cells in each row being coupled to a row line; a plurality of column lines each of which is coupled to one of the emitters of all cells within a column; row decoding means for selecting a row line to access the information stored in a particular memory cell within said array; and column decoding means for decoding said Hall voltage to access said data stored in said patch of said particular cell appearing on the column line coupled to the emitter of said particular cell.

Claim 11

The memory device of claim 8 further comprising a means for writing said information to said patch of each said cell.

Claim 12

The memory device of claim 9 wherein said writing means comprises at least one pair of current carrying conductors formed around each said patch, said conductors accommodating a writing current large enough to magnetize said patch.

Claim 13

The memory device of claim 8 wherein said bipolar transistors comprise NPN transistors.

Claim 14

The memory device of claim 8 wherein said bipolar transistors comprise PNP transistors.

Claim 15

A Hall effect semiconductor memory device comprising: a plurality of memory cells formed in semiconductor substrate and arranged in rows and columns so as to form an array, each cell including a magnetic patch for storing data in the form of magnetic field; a gate member for generating an inversion layer in said substrate such that when said current flows in said inversion layer in a direction perpendicular to said magnetic field, a Hall voltage is developed across said channel in a direction perpendicular to both said current flow and said magnetic field; a pair of vertical bipolar transistors each of which is formed in said substrate along opposite sides of said channel such that the base region of each transistor is ohmically coupled to said inversion layer to sense said Hall voltage; said device further comprising: a plurality of row lines, the gate member of all cells in each row being coupled to a row line; a plurality of column lines each of which is coupled to one of the emitters of all cells within a column; row decoding means for selecting a row line to access the information stored within a particular memory cell within said array; column decoding means for decoding said Hall voltage appearing on the column line coupled to the emitter of said particular memory cell to access said data.

Claim 16

A Hall effect semiconductor memory device comprising: a plurality of memory cells formed in semiconductor substrate and arranged in rows and columns so as to form an array, each cell including a magnetic patch for storing data in the form of magnetic field; a gate member for generating an inversion layer in said substrate such that when said current flows in said inversion layer in a direction perpendicular to said magnetic field, a Hall voltage is developed across said channel in a direction perpendicular to both said current flow and said magnetic field; a pair of vertical bipolar transistors each of which is formed in said substrate along opposite sides of said channel such that the base region of each transistor is ohmically coupled to said inversion layer to sense said Hall voltage; said device further comprising: a plurality of row lines, the gate member of all cells in each row being coupled to a row line; a plurality of column lines each of which is coupled to one of the emitters of all cells within a column; row decoding means for selecting a row line to access the information stored within a particular memory cell within said array; column decoding means for decoding said Hall voltage appearing on the column line coupled to the emitter of said particular memory cell to access said data.