Method and apparatus for detecting uneven magnetic field by sweeping a plasma current across a semiconductor

Claim 3

The method of claim 1 wherein the inverted magnetic field comprises at least one magnetic bubble.

Claim 4

The method of claim 1 wherein the inverted magnetic field is detected by detecting a change in the plasma current between the electrodes of the semiconductor, said electrodes being on opposite ends of the semiconductor.

Claim 5

The method of claim 3 wherein the boundary of the inverted magnetic field is applied to intersect the electrodes on opposite ends of the semiconductor device.

Claim 6

The method of claim 2 wherein at least two magnetic bubbles are applied to the semiconductor device.

Claim 7

The method of claim 1 wherein the electrodes are ohmic electrodes disposed for injecting electrons and positive holes in the semiconductor device.

Claim 8

The method of claim 1 wherein the position of the inverted magnetic field is detected by means of one of a plurality of separated electrodes.

Claim 9

The method of claim 1 wherein the inverted magnetic field is detected by reading the change in current across the electrodes of each of a plurality of semiconductor devices.

Claim 10

The method of claim 1 wherein a plurality of semiconductor devices are positioned in parallel for determining the position of the inverted magnetic field.

Claim 11

The method of claim 1 wherein a plurality of semiconductor devices are positioned to intersect each other for determining the position of the inverted magnetic field.

Claim 12

An electrical device for electrically detecting an inverted magnetic field, said device comprising in conbination, at least one semiconductor device having at least two electrodes and disposed in a magnetic field, means for providing an inverted magnetic field portion within the magnetic field, means for providing a plasma current in the semiconductor device across said electrodes means for sweeping plasma current by interaction of the plasma with the magnetic field across the semiconductor until the sweeping plasma current is confined at th boundary of the inverted magnetic field, and one of said leectrode disposed at the location of the confined plasma current at the boundary of the inverted magnetic field, whereby the location of the inverted magnetic field is detected by passing the plasma current to the electrode disposed at the confined plasma location.

Claim 13

An electrical device for electrically detecting an inverted magnetic field, said device comprising in conbination, at least one semiconductor device having at least two electrodes and disposed in a magnetic field, means for providing an inverted magnetic field portion within the magnetic field, means for providing a plasma current in the semiconductor device across said electrodes means for sweeping plasma current by interaction of the plasma with the magnetic field across the semiconductor until the sweeping plasma current is confined at th boundary of the inverted magnetic field, and one of said leectrode disposed at the location of the confined plasma current at the boundary of the inverted magnetic field, whereby the location of the inverted magnetic field is detected by passing the plasma current to the electrode disposed at the confined plasma location.

Claim 14

The electrical device of claim 11 wherein the semiconductor has negative-conductance characteristics of current control type and wherein the at least two of said electrodes are provided on opposite ends thereof.

Claim 15

The electrical device of claim 11 wherein the inverted magnetic field comprises at least one magnetic bubble.

Claim 16

The electrical device of claim 11 wherein the Semiconductor device has high mobility and is provided with input electrodes on opposite ends thereof.

Claim 17

The electrical device of claim 12 wherein the electrodes are ohmic electrodes capable of injecting electrons and positive holes.

Claim 18

The electrical device of claim 15 wherein an electrode at one end is divided into a plurality of separated electrodes.

Claim 19

The electrical device of claim 11 wherein a pluraltiy of semiconductor devices are arranged in an array within the means for applying an inverted magnetic field.

Claim 20

The electrical device of claim 16 wherein a plurality of semiconductor devices are arranged in an array within the means for applying an inverted magnetic field.

Claim 21

The electrical device of claim 12 wherein a plurality of semiconductor devices are arranged in an array within the means for applying an inverted magnetic field.

Claim 22

The electrical device of claim 13 wherein the width of the semiconductor device is greater than the width of the magnetic bubble.

Claim 23

The electrical device of claim 11 wherein the semiconductor device is made of high mobility material.