Semiconductor integrated circuit capable of correcting wiring skew

Claim 2

A semiconductor integrated circuit comprising: a plurality of circuit blocks placed on a semiconductor substrate; a first wiring layer disposed above the semiconductor substrate and being unconnected to said circuit blocks; a second wiring layer disposed at a different level from said first wiring layer to form a wiring capacitance between said first and second wiring layers, and being connected to said circuit blocks; and an insulating layer disposed between said first and second wiring layers and including through-hole passages formed in said insulating layer, said first and second wiring layers being connected to each other via the through-hole passages to allow adjustment of the wiring capacitance.

Claim 3

A semiconductor integrated circuit according to claim 1, wherein said insulating layer is formed on said second wiring layer and said first wiring layer is formed on said insulating layer.

Claim 4

A semiconductor integrated circuit according to claim 1, wherein said insulating layer is formed on said first wiring layer and said second wiring layer is formed on said insulating layer.

Claim 5

A semiconductor integrated circuit according to claim 2, wherein said first wiring layer is made of aluminum and said second wiring layer is made of polysilicon.

Claim 6

A semiconductor integrated circuit according to claim 3, wherein said first wiring layer is made of aluminum and said second wiring layer is made of polysilicon.

Claim 7

A semiconductor integrated circuit according to claim 3, wherein said first and second wiring layers are made of aluminum.

Claim 8

A semiconductor integrated circuit comprising: a plurality of circuit blocks placed on a semiconductor substrate; a plurality of first wiring layers being unconnected to said circuit blocks and spaced at regular intervals; a second wiring layer disposed at a different level from and between said first wiring layers to form wiring capacitance between the second and first wiring layers, and which has contact portions overlapping said first wiring layers and is connected to said circuit blocks; an insulating layer disposed between said first and second wiring layers and including a through-hole passage formed in the insulating layer at locations corresponding to said contact portions, said first and second wiring layers being connected to each other via the through-hole passage to allow adjustment of the wiring capacitance.

Claim 9

A semiconductor integrated circuit comprising: a plurality of circuit blocks placed on a semiconductor substrate; a plurality of first wiring layers being unconnected to said circuit blocks and spaced at regular intervals; a second wiring layer disposed at a different level from and between said first wiring layers to form wiring capacitance between the second and first wiring layers, and which has contact portions overlapping said first wiring layers and is connected to said circuit blocks; an insulating layer disposed between said first and second wiring layers and including a through-hole passage formed in the insulating layer at locations corresponding to said contact portions, said first and second wiring layers being connected to each other via the through-hole passage to allow adjustment of the wiring capacitance.

Claim 10

A semiconductor integrated circuit according to claim 7, wherein said insulating layer is formed on said second wiring layer and said first wiring layers are formed on said insulating layer.

Claim 11

A semiconductor integrated circuit according to claim 7, wherein said insulating layer is formed on said first wiring layers and said second wiring layer is formed on said insulating layer.

Claim 12

A semiconductor integrated circuit according to claim 8, wherein said first wiring layers are made of aluminum and said second wiring layer is made of polysilicon.

Claim 13

A semiconductor integrated circuit according to claim 9, wherein said first wiring layers are made of aluminum and said second wiring layer is made of polysilicon.

Claim 14

A semiconductor integrated circuit according to claim 9, wherein said first and second wiring layers are made of aluminum.

Claim 15

A semiconductor integrated circuit comprising: a plurality of circuit blocks placed on a semiconductor substrate; a plurality of first wiring layers being unconnected to said circuit blocks and spaced at regular intervals; a second wiring layer disposed so as to cross said first wiring layers at right angles to form a wiring capacitance between the second and first wiring layers, and which is connected to said circuit blocks; an insulating layer disposed between said first and second wiring layers and including through-hole passages formed in said insulating layer, said first and second wiring layers being connected to each other via the through-hole passages to allow adjustment of the wiring capacitance.

Claim 16

A semiconductor integrated circuit comprising: a plurality of circuit blocks placed on a semiconductor substrate; a plurality of first wiring layers being unconnected to said circuit blocks and spaced at regular intervals; a second wiring layer disposed so as to cross said first wiring layers at right angles to form a wiring capacitance between the second and first wiring layers, and which is connected to said circuit blocks; an insulating layer disposed between said first and second wiring layers and including through-hole passages formed in said insulating layer, said first and second wiring layers being connected to each other via the through-hole passages to allow adjustment of the wiring capacitance.

Claim 17

A semiconductor integrated circuit according to claim 13, wherein said insulating layer is formed on said second wiring layer and said first wiring layers are formed on said insulating layer.

Claim 18

A semiconductor integrated circuit according to claim 13, wherein said insulating layer is formed on said first wiring layers and said second wiring layer is formed on said insulating layer.

Claim 19

A semiconductor integrated circuit according to claim 14, wherein said first wiring layers are made of aluminum and said second wiring layer is made of polysilicon.

Claim 20

A semiconductor integrated circuit according to claim 15, wherein said first wiring layers are made of aluminum and said second wiring layer is made of polysilicon.

Claim 21

A semiconductor integrated circuit according to claim 15, wherein said first and second wiring layers are made of aluminum.

Claim 22

A semiconductor integrated circuit comprising: a plurality of circuit blocks placed on a semiconductor substrate; a first wiring layer disposed above said semiconductor substrate and being unconnected to said circuit blocks; a first insulating layer formed on said first wiring layer and including a plurality of first through-hole passages formed in said first insulating layer; a second wiring layer formed on said first insulating layer and being connected to said circuit blocks, and which is connected to said first wiring layer via said first through-hole passages to allow adjustment of the wiring capacitance; a second insulating layer formed on said second wiring layer and including second through-hole passages formed in said second insulating layer; and a third wiring layer formed on said second insulating layer and being connected to said circuit blocks, and which is connected to said second wiring layer via said second through-hole passages to allow adjustment of the wiring capacitance.

Claim 23

A semiconductor integrated circuit comprising: a plurality of circuit blocks placed on a semiconductor substrate; a first wiring layer disposed above said semiconductor substrate and being unconnected to said circuit blocks; a first insulating layer formed on said first wiring layer and including a plurality of first through-hole passages formed in said first insulating layer; a second wiring layer formed on said first insulating layer and being connected to said circuit blocks, and which is connected to said first wiring layer via said first through-hole passages to allow adjustment of the wiring capacitance; a second insulating layer formed on said second wiring layer and including second through-hole passages formed in said second insulating layer; and a third wiring layer formed on said second insulating layer and being connected to said circuit blocks, and which is connected to said second wiring layer via said second through-hole passages to allow adjustment of the wiring capacitance.

Claim 24

A semiconductor integrated circuit according to claim 19, wherein said first wiring layer is made of polysilicon.

Claim 25

A semiconductor integrated circuit according to claim 19, wherein said second and third wiring layers are made of aluminum.

Claim 26

A semiconductor integrated circuit comprising: a plurality of circuit blocks placed on a semiconductor substrate; a subdivided first wiring layer formed above the semiconductor substrate and being unconnected to said circuit blocks; a second wiring layer disposed at a different level from said first wiring layer to form a wiring capacitance between the first and second wiring layers, and being connected to said circuit blocks; and an insulating layer disposed between said first and second wiring layers and including a plurality of through-hole passages formed in said insulating layer, said first and second wiring layers being connected to each other via the through-hole passages in accordance with a delay time of a signal transferred in the second wiring layer.

Claim 27

A semiconductor integrated circuit comprising: a plurality of circuit blocks placed on a semiconductor substrate; a subdivided first wiring layer formed above the semiconductor substrate and being unconnected to said circuit blocks; a second wiring layer disposed at a different level from said first wiring layer to form a wiring capacitance between the first and second wiring layers, and being connected to said circuit blocks; and an insulating layer disposed between said first and second wiring layers and including a plurality of through-hole passages formed in said insulating layer, said first and second wiring layers being connected to each other via the through-hole passages in accordance with a delay time of a signal transferred in the second wiring layer.

Claim 28

A semiconductor integrated circuit comprising: a plurality of circuit blocks placed on a semiconductor substrate; a plurality of branch interconnection layers formed above the semiconductor substrate, one end of each branch interconnection layer being connected to at least one of the circuit blocks; a plurality of wiring layers disposed at a different level from the branch interconnection layers to form a wiring capacitance between the branch interconnection layers and the wiring layers, and being unconnected to the circuit blocks; an insulating layer disposed between the branch interconnection layers and the wiring layers and including through-hole passages formed in said insulating layer, said branch interconnection layers and the wiring layers being connected to each other via the through-hole passages to allow adjustment of the wiring capacitance; and an interconnection layer being connected to another end of each of the branch interconnection layers.

Claim 29

A semiconductor integrated circuit comprising: a plurality of circuit blocks placed on a semiconductor substrate; a plurality of branch interconnection layers formed above the semiconductor substrate, one end of each branch interconnection layer being connected to at least one of the circuit blocks; a plurality of wiring layers disposed at a different level from the branch interconnection layers to form a wiring capacitance between the branch interconnection layers and the wiring layers, and being unconnected to the circuit blocks; an insulating layer disposed between the branch interconnection layers and the wiring layers and including through-hole passages formed in said insulating layer, said branch interconnection layers and the wiring layers being connected to each other via the through-hole passages to allow adjustment of the wiring capacitance; and an interconnection layer being connected to another end of each of the branch interconnection layers.

Claim 30

A semiconductor integrated circuit according to claim 1, wherein: said first wiring layer is subdivided into a plurality of different sections; said second wiring layer comprises at least two signal paths having different timing delays; and said sections of said first wiring layer are selectively connected to said second wiring layer through said through-hole passages to reduce the difference between the timing delays for the at least two signal paths.

Claim 31

A semiconductor integrated circuit according to claim 7, wherein: each first wiring layer is subdivided into a plurality of different sections; said second wiring layer comprises at least two signal paths having different timing delays; and said sections of each first wiring layer are selectively connected to said second wiring layer through said through-hole passages to reduce the difference between the timing delays for the at least two signal paths.

Claim 32

A semiconductor integrated circuit according to claim 13, wherein: each first wiring layer is subdivided into a plurality of different sections; said second wiring layer comprises at least two signal paths having different timing delays; and said sections of each first wiring layer are selectively connected to said second wiring layer through said through-hole passages to reduce the difference between the timing delays for the at least two signal paths.

Claim 33

A semiconductor integrated circuit according to claim 22, wherein said first and second wiring layers are connected to each other via the through-hole passages to allow adjustment of the wiring capacitance.