US5083188A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Integrated circuit having superconductive wirings
Assignee: Mitsubishi Electric Corp
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Filing: 1990-11-27
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Granted: 1992-01-21
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Expires: 2010-11-27
Abstract
Abstract An integrated circuit having a superconductive wiring comprises a semiconductor substrate, an integrated circuit device formed on the semiconductor substrate and a wiring connected to the integrated circuit device. The wiring is formed of a superconductive material and has a wide portion for heat radiation. The manufacturing method of the same comprises the steps of preparing a semiconductor substrate, forming an integrated circuit device on the semiconductor substrate, and connecting a wiring having a wide portion for heat radiation and formed of a superconductive material to the integrated circuit device on the semiconductor substrate.
Inventors
- 👤 Tadato Yamagata
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 12:36
CPC Classifications
H; H10; H10W; H10W40/00; H10W40/10; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4484; Y; Y10; Y10S; Y10S505/00; Y10S505/70; Y10S505/701; Y10S505/703; Y10S505/704; Y10S505/825; Y10S505/856; Y10S505/884; Y10S505/887
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
57 words
An integrated circuit comprising: a semiconductor substrate; an integrated circuit device formed on said semiconductor substrate; and a superconductive wiring connected to said integrated circuit device; wherein said superconductive wiring comprises a contact portion formed of a superconductive material, and a portion for heat radiation, wherein said portion for heat radiation is separate from said contact portion.
Claim 2
Dependent Claim
57 words
An integrated circuit comprising: a semiconductor substrate; an integrated circuit device formed on said semiconductor substrate; and a superconductive wiring connected to said integrated circuit device; wherein said superconductive wiring comprises a contact portion formed of a superconductive material, and a portion for heat radiation, wherein said portion for heat radiation is separate from said contact portion.
Claim 3
Dependent Claim
23 words
An integrated circuit according to claim 1, wherein said portion for heat radiation has an enlarged end portion to enhance heat radiating effect.
Claim 4
Dependent Claim
21 words
An integrated circuit according to claim 1, wherein said superconductive wiring is a Y system or Bi system ceramic superconductive material.
Claim 5
Dependent Claim
22 words
An integrated circuit according to claim 3, wherein said superconductive wiring is formed of a superconductive material consists of Y-Ba-Cu-O or Bi-Sr-Ca-Cu-O.
Claim 6
Dependent Claim
57 words
An integrated circuit according to claim 1, wherein said integrated circuit device comprises an active device, said active device comprising a gate electrode arranged on said semiconductor surface region, a source/drain region arranged adjacent to said gate electrode and a device wiring connected to said source/drain region, and said superconductive wiring is connected to said device wiring.
Claim 7
Dependent Claim
20 words
An integrated circuit according to claim 1 further comprising an associated cooling apparatus to lower temperature of said integrated circuit.
Claim 8
Dependent Claim
14 words
An integrated circuit according to claim 6 wherein the cooling apparatus employs liquid nitrogen.
Claim 9
Dependent Claim
75 words
An integrated circuit comprising: a semiconductor substrate; an integrated circuit device formed on said semiconductor substrate; a first wiring layer connected to said integrated circuit device; and a second wiring layer connected to said first wiring layer, wherein said second wiring layer is a superconductive wiring comprising (1) a contact portion formed of a superconductive material, and (2) a portion for heat radiation, wherein said portion for heat radiation is separate from said contact portion.
Claim 10
Dependent Claim
75 words
An integrated circuit comprising: a semiconductor substrate; an integrated circuit device formed on said semiconductor substrate; a first wiring layer connected to said integrated circuit device; and a second wiring layer connected to said first wiring layer, wherein said second wiring layer is a superconductive wiring comprising (1) a contact portion formed of a superconductive material, and (2) a portion for heat radiation, wherein said portion for heat radiation is separate from said contact portion.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1995-01-20 | 1995-07-22 | 1996-01-21 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1999-01-20 | 1999-07-22 | 2000-01-21 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 2003-01-20 | 2003-07-22 | 2004-01-21 | $7700.00 | Window Closed / Lapsed |